公开(公告)号：US06440863B1

公开(公告)日：2002-08-27

申请号：US09148556

申请日：1998-09-04

申请人： Chia-Shiun Tsai ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Chia-Shiun Tsai ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L21302

CPC分类号： H01L21/7681 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76808 ,  H01L2221/1031 ,  H01L2221/1036

摘要： A method for forming a patterned oxygen containing plasma etchable layer. There is first provided a substrate. There is then formed upon the substrate a blanket oxygen containing plasma etchable layer. There is then formed upon the blanket oxygen containing plasma etchable layer a blanket hard mask layer. There is then formed upon the blanket hard mask layer a patterned photoresist layer. There is then etched while employing a first plasma etch method in conjunction with the patterned photoresist layer as a first etch mask layer the blanket hard mask layer to form a patterned hard mask layer. There is then etched while employing a second plasma etch method in conjunction with at least the patterned hard mask layer as a second etch mask layer the blanket oxygen containing plasma etchable layer to form a patterned oxygen containing plasma etchable layer. The second plasma etch method employs a second etchant gas composition comprising: (1) an oxygen containing etchant gas which upon plasma activation provides an active oxygen etching species; and (2) boron trichloride.

摘要翻译： 一种用于形成图案化含氧等离子体可刻蚀层的方法。 首先提供基板。 然后在衬底上形成包含氧气的等离子体可蚀刻层。 然后在橡皮布含氧等离子体可蚀刻层上形成橡皮布硬掩模层。 然后在橡皮布硬掩模层上形成图案化的光致抗蚀剂层。 然后蚀刻，同时采用第一等离子体蚀刻方法结合图案化的光致抗蚀剂层作为第一蚀刻掩模层，橡皮布硬掩模层以形成图案化的硬掩模层。 然后蚀刻，同时采用第二等离子体蚀刻方法结合至少图案化的硬掩模层作为第二蚀刻掩模层，该覆盖氧含氧等离子体可蚀刻层以形成图案化的含氧等离子体可蚀刻层。 第二等离子体蚀刻方法采用第二蚀刻剂气体组合物，其包括：（1）含氧蚀刻剂气体，其在等离子体激活时提供活性氧蚀刻物质; 和（2）三氯化硼。

公开(公告)号：US6040248A

公开(公告)日：2000-03-21

申请号：US104032

申请日：1998-06-24

申请人： Chao-Cheng Chen ,  Ming-Hsin Huang ,  Hun-Jan Tao ,  Chia-Shiung Tsai

发明人： Chao-Cheng Chen ,  Ming-Hsin Huang ,  Hun-Jan Tao ,  Chia-Shiung Tsai

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/302 ,  C23F1/02 ,  H01L21/461

CPC分类号： H01L21/31138 ,  H01L21/76802

摘要： A process for plasma etching of contact and via openings in low-k organic polymer dielectric layers is described which overcomes problems of sidewall bowing and hardmask pattern deterioration by etching the organic layer in a high density plasma etcher with a chlorine/inert gas plasma. By adding chlorine to the oxygen/inert gas plasma, the development of an angular aspect or faceting of the hardmask pattern edges by ion bombardment is abated. Essentially vertical sidewalls are obtained in the openings etched in the organic polymer layer while hardmask pattern integrity is maintained. The addition of a passivating agent such as nitrogen, BCl.sub.3, or CHF.sub.3 to the etchant gas mixture further improves the sidewall profile by reducing bowing through protective polymer formation.

摘要翻译： 描述了一种用于等离子体蚀刻低k有机聚合物介电层中的接触和通孔开口的方法，其通过用氯/惰性气体等离子体在高密度等离子体蚀刻机中蚀刻有机层来克服侧壁弯曲和硬掩模图案劣化的问题。 通过向氧/惰性气体等离子体中加入氯，减少了通过离子轰击形成硬掩模图案边缘的角度方面或刻面。 在保持硬掩模图案完整性的同时，在有机聚合物层中蚀刻的开口中获得基本垂直的侧壁。 钝化剂如氮气，BCl3或CHF3添加到蚀刻剂气体混合物中，通过减少通过保护性聚合物形成的弯曲来进一步改善侧壁轮廓。

公开(公告)号：US20100190349A1

公开(公告)日：2010-07-29

申请号：US12798201

申请日：2010-03-30

申请人： Huang-Ming Chen ,  Chun-Li Chou ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Huang-Ming Chen ,  Chun-Li Chou ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L21/465 ,  C23F1/00

CPC分类号： H01L21/68735 ,  H01J37/3244 ,  H01J37/32642 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/67069 ,  Y10S156/914 ,  Y10S156/915 ,  Y10T279/23

摘要： A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

摘要翻译： 防止在半导体衬底的背面形成污染性聚合物膜的方法包括提供在蚀刻操作期间释放氧气的氧浸渍聚焦环和/或氧浸渍卡盘。 该方法还通过在冷却气体混合物中混合氧将氧气输送到衬底，在蚀刻和清洁衬底期间将聚焦环保持在不高于衬底温度的温度，使用包括悬浮衬底的两步骤等离子体清洗序列 在卡盘上方

公开(公告)号：US20050184388A1

公开(公告)日：2005-08-25

申请号：US10782365

申请日：2004-02-19

申请人： Hsin-Ching Shih ,  Kang-Cheng Lin ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Hsin-Ching Shih ,  Kang-Cheng Lin ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L23/48 ,  H01L23/58

CPC分类号： H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： In accordance with the objective of the invention a new method is provided for the creation of a seal ring having dissimilar elements. The Critical Dimensions of the seal ring are selected with respect to the CD of other device features, such a seal vias, such that the difference in etch sensitivity between the created seal ring and the via holes is removed. All etch of the simultaneously etched features is completed at the same time, avoiding punch through of an underlying layer of etch stop material.

摘要翻译： 根据本发明的目的，提供了一种用于创建具有不同元件的密封环的新方法。 密封环的临界尺寸相对于其它装置特征（例如密封通孔）的CD被选择，使得所产生的密封环和通孔之间的蚀刻敏感性的差异被去除。 同时蚀刻的特征的所有蚀刻同时完成，避免冲蚀下一层蚀刻停止材料。

公开(公告)号：US06821880B1

公开(公告)日：2004-11-23

申请号：US10725138

申请日：2003-12-01

申请人： Hun-Jan Tao ,  Chao-Cheng Chen

发明人： Hun-Jan Tao ,  Chao-Cheng Chen

IPC分类号： H01L214763

CPC分类号： H01L21/76814 ,  H01L21/67155 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76838

摘要： A process of dual damascene or damascene. The dual damascene process entails providing an etching apparatus, a DCM machine and a wafer, the wafer having a metal line, a stop layer, a dielectric layer, a contact, and a photoresist layer. The dielectric layer and the contact are etched in the etching apparatus to form a trench. The photoresist and the contact are ashed in the DCM machine. Finally the wafer is wet cleaned.

摘要翻译： 一个双镶嵌或镶嵌的过程。 双镶嵌工艺需要提供蚀刻装置，DCM机器和晶片，晶片具有金属线，阻挡层，介电层，接触和光致抗蚀剂层。 在蚀刻装置中蚀刻介电层和接触以形成沟槽。 在DCM机器中将光致抗蚀剂和接触物灰化。 最后将晶片湿式清洗。

公开(公告)号：US6130167A

公开(公告)日：2000-10-10

申请号：US270593

申请日：1999-03-18

申请人： Hun-Jan Tao ,  Shu-Chin Yang ,  Chao-Cheng Chen

发明人： Hun-Jan Tao ,  Shu-Chin Yang ,  Chao-Cheng Chen

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/308

CPC分类号： H01L21/02071 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76814 ,  H01L21/76888 ,  H01L21/31116

摘要： A process used to prevent attack of an aluminum based structure, exposed in a non-fully landed via hole, from solvents used during the wet stripping cycle, performed to remove the via hole defining photoresist shape, has been developed. The process features the formation of a protective aluminum oxide layer, on the exposed side of the aluminum based structure, via use of a plasma treatment, performed in an H.sub.2 O/N.sub.2 ambient. The H.sub.2 O/N.sub.2 plasma treatment procedure is performed after a dry plasma, photoresist stripping step, but prior to a final wet photoresist stripping step. The aluminum oxide layer offers protection of the exposed regions of the aluminum structure, located in the non-fully landed via hole, from reaction or corrosion, that can result from exposure of aluminum to the solvents used in the final wet photoresist stripping cycle.

摘要翻译： 已经开发了一种用于防止暴露在非完全着陆的通孔中的铝基结构从在湿式剥离循环期间使用的溶剂的侵蚀的过程，以去除限定光致抗蚀剂形状的通孔。 该方法的特征在于在基于铝的结构的暴露侧上通过使用在H 2 O / N 2环境中进行的等离子体处理形成保护性氧化铝层。 H 2 O / N 2等离子体处理程序在干等离子体，光致抗蚀剂剥离步骤之后，但在最后的湿光致抗蚀剂剥离步骤之前进行。 氧化铝层提供保护位于非完全着陆的通孔中的铝结构的暴露区域不受反应或腐蚀的影响，这可能是由于将铝暴露于最终湿光致抗蚀剂剥离循环中使用的溶剂而导致的。

公开(公告)号：US20060151430A1

公开(公告)日：2006-07-13

申请号：US11358393

申请日：2006-02-21

申请人： Hui Yang ,  Miao-Ju Hsu ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Hui Yang ,  Miao-Ju Hsu ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： H01L21/31116 ,  H01J37/32935 ,  H01L22/26

摘要： A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the processing of the associated one of the plurality of layers, and (3) determining dynamic processing progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the processing.

摘要翻译： 一种处理多层薄膜的方法，该方法包括：（1）根据选定的参数处理多个层，（2）确定多个光学特性，每个光学特性与多个层之一相关联，并在处理过程中确定 所述多个层中的相关联的一个层，以及（3）基于与经历所述处理的所述多个层中的特定一个层相关联的所述多个光学特性中的一个来确定动态处理进度。

公开(公告)号：US07022610B2

公开(公告)日：2006-04-04

申请号：US10743979

申请日：2003-12-22

申请人： Chun-Li Chou ,  Yih-Ann Lin ,  Yi-Chen Huang ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Chun-Li Chou ,  Yih-Ann Lin ,  Yi-Chen Huang ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L21/302

CPC分类号： H01L21/02071 ,  H01L21/02063 ,  H01L21/76807

摘要： A method for cleaning semiconductor substrates includes a DI water clean operation that uses a spin speed no greater than 350 rpm. The cleaning method may include additional cleaning operations such as an organic clean, an aqueous chemical clean or a DI water/ozone clean. The cleaning method may be used to clean substrates after the conclusion of an etching procedure which exposes a single film between a Cu-containing conductive material and the environment. The spin speed of the DI water clean operation prevents copper corrosion due to breakdown of the film that separates the Cu-containing conductive material from the environment.

摘要翻译： 用于清洁半导体衬底的方法包括使用不大于350rpm的旋转速度的去离子水清洁操作。 清洁方法可以包括附加的清洁操作，例如有机清洁剂，水性化学清洁剂或去离子水/臭氧清洁剂。 在完成了在含Cu导电材料和环境之间暴露单个膜的蚀刻过程结束之前，清洁方法可用于清洁衬底。 去离子水清洁操作的旋转速度可防止由于将含Cu导电材料与环境分离的膜破裂导致铜腐蚀。

公开(公告)号：US06194128B1

公开(公告)日：2001-02-27

申请号：US09156053

申请日：1998-09-17

申请人： Hun-Jan Tao ,  Chao-Cheng Chen ,  Chia-Shiung Tsai

发明人： Hun-Jan Tao ,  Chao-Cheng Chen ,  Chia-Shiung Tsai

IPC分类号： G03F700

CPC分类号： H01L21/76835 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L2221/1036

摘要： A novel method of dual damascene etching is disclosed. It is shown that the performance of ULSI circuits can be improved by shrinking interconnect dimensions through the use of dual damascene processes, using hard-masks to achieve vertical walls and hence smaller spaces in the damascene structures, introducing low-k (dielectric constant) insulating materials to reduce RC delays, and metallizing with copper without the deleterious effects of bridging after CMP. These are accomplished by using a novel recipe for etching the hard-masks used in a dual damascene process and still another recipe for etching low-k dielectric layers in three different combinations with oxide-based dielectric layers.

摘要翻译： 公开了一种双镶嵌蚀刻的新方法。 通过使用双镶嵌工艺，通过使用硬掩模实现垂直壁并因此在镶嵌结构中实现更小的空间来缩小互连尺寸，可以提高ULSI电路的性能，引入低k（介电常数）绝缘 减少RC延迟的材料，以及铜的金属化，而没有CMP后的桥接的有害影响。 这些是通过使用用于蚀刻在双镶嵌工艺中使用的硬掩模的新配方来实现的，还有另一种用于蚀刻具有氧化物基电介质层的三种不同组合的低k电介质层的方案。

公开(公告)号：US08529783B2

公开(公告)日：2013-09-10

申请号：US12798201

申请日：2010-03-30

申请人： Huang-Ming Chen ,  Chun-Li Chou ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Huang-Ming Chen ,  Chun-Li Chou ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L21/302

CPC分类号： H01L21/68735 ,  H01J37/3244 ,  H01J37/32642 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/67069 ,  Y10S156/914 ,  Y10S156/915 ,  Y10T279/23

摘要： A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

摘要翻译： 防止在半导体衬底的背面形成污染性聚合物膜的方法包括提供在蚀刻操作期间释放氧气的氧浸渍聚焦环和/或氧浸渍卡盘。 该方法还通过在冷却气体混合物中混合氧将氧气输送到衬底，在蚀刻和清洁衬底期间将聚焦环保持在不高于衬底温度的温度，使用包括悬浮衬底的两步骤等离子体清洗序列 在卡盘上方