摘要:
A programmable variable depth and width random-access memory circuit is provided. The memory circuit contains rows and columns of memory cells for storing data. A row decoder is used to address individual rows of the memory cells. Column address circuitry receives a column address signal and a width and depth selection signal. A column decoder within the column address circuitry addresses one or more columns of memory cells of the RAM array based on the selected width of the array. The output of the column decoder is routed to the appropriate column or columns of memory cells by a pattern of fixed connections and a group of programmable multiplexers. The number of data output lines to which data signals are provided is determined by the selected width of the RAM array. The output circuitry contains a group of programmable demultiplexers and a routing array having a pattern of fixed connections suitable for passing data signals from the RAM array to the selected number of data output lines.
摘要:
A programmable logic array integrated circuit has a number of programmable logic modules which are grouped together in a plurality of logic array blocks ("LABs"). The LABs are arranged on the circuit in a two dimensional array. A conductor network is provided for interconnecting any logic module with any other logic module. In addition, adjacent or nearby logic modules are connectable to one another for such special purposes as providing a carry chain between logic modules and/or for connecting two or more modules together to provide more complex logic functions without having to make use of the general interconnection network. Another network of so-called fast or universal conductors is provided for distributing widely used logic signals such as clock and clear signals throughout the circuit. Multiplexers can be used in various ways to reduce the number of programmable interconnections required between signal conductors. A relatively large block of random access memory ("RAM") may be provided on the device for use as read-only memory ("ROM") or RAM during operation of the device to perform logic. The RAM block is connected in the circuitry of the device so that it can be programmed and verified compatibly with other memory on the device. Thereafter the circuitry of the RAM block allows it to be switched over to operation as RAM or ROM during logic operation of the device.
摘要:
A programmable logic array integrated circuit device has a relatively large block of programmable memory cells in addition to the usual programmable logic modules and the usual programmable interconnection conductor network. In order to simplify the circuitry associated with the large block, and especially the circuitry for addressing that block during programming and/or verification of the device, the address decoder that is normally used to address the block during use of the device to perform logic is also used during programming and/or verification. During programming and/or verification a counter or other similar coded address signal generating circuitry is used to supply address information to the decoder.
摘要:
A relatively large block of random access memory ("RAM") may be provided on a programmable logic array integrated circuit device for use as read-only memory ("ROM") or RAM during operation of the device to perform logic. The RAM block is connected in the circuitry of the device so that it can be programmed and verified compatibly with other memory on the device. Thereafter the circuitry of the RAM block allows it to be switched over to operation as RAM or ROM during logic operation of the device.
摘要:
A programmable variable depth and width random-access memory circuit is provided. The memory circuit contains rows and columns of memory cells for storing data. A row decoder is used to address individual rows of the memory cells. Column address circuitry receives a column address signal and a width and depth selection signal. A column decoder within the column address circuitry addresses one or more columns of memory cells of the RAM array based on the selected width of the array. The output of the column decoder is routed to the appropriate column or columns of memory cells by a pattern of fixed connections and a group of programmable multiplexers. The number of data output lines to which data signals are provided is determined by the selected width of the RAM array. The output circuitry contains a group of programmable demultiplexers and a routing array having a pattern of fixed connections suitable for passing data signals from the RAM array to the selected number of data output lines.
摘要:
A method of serially reading and writing random access memory arrays is provided. Although the read/write inputs continually change as programming data are clocked into the input buffers, a read/write control circuit prevents the constantly changing read/write inputs from causing undesired reading and writing.
摘要:
A method of serially reading and writing random access memory arrays is provided. Although the read/write inputs continually change as programming data are clocked into the input buffers, a read/write control circuit prevents the constantly changing read/write inputs from causing undesired reading and writing.
摘要:
A programmable logic array integrated circuit device has a relatively large block of programmable memory cells in addition to the usual programmable logic modules and the usual programmable interconnection conductor network. In order to simplify the circuitry associated with the large block, and especially the circuitry for addressing that block during programming and/or verification of the device, the address decoder that is normally used to address the block during use of the device to perform logic is also used during programming and/or verification. During programming and/or verification a counter or other similar coded address signal generating circuitry is used to supply address information to the decoder.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE−Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.