公开(公告)号：US09052332B2

公开(公告)日：2015-06-09

申请号：US13484681

申请日：2012-05-31

申请人： Chih-Wei Huang ,  Chieh-Pin Chang ,  Ja-Hao Chen ,  Chuan-Jane Chao ,  Ying-Zong Juang ,  Shyh-Chyi Wong ,  Yeong-Her Wang

发明人： Chih-Wei Huang ,  Chieh-Pin Chang ,  Ja-Hao Chen ,  Chuan-Jane Chao ,  Ying-Zong Juang ,  Shyh-Chyi Wong ,  Yeong-Her Wang

IPC分类号： G01P15/09 ,  G01P15/08 ,  G01P15/12

CPC分类号： G01P15/0802 ,  G01P15/123 ,  G01P2015/0837

摘要： A pizeoresistive type Z-axis accelerometer is provided, including a substrate; a plurality of anchors formed over the substrate; a plurality of cantilever beams, wherein the cantilever beams include a piezoresistive material; and a proof mass, wherein the proof mass is suspended over the substrate by respectively connecting the proof mass with the anchors, and the accelerometer senses a movement of the proof mass by the piezoresistive material.

摘要翻译： 提供了一种包括基板的等离子体型Z轴加速度计， 形成在所述基板上的多个锚固件; 多个悬臂梁，其中所述悬臂梁包括压阻材料; 以及证明物质，其中通过分别将证明物质与锚固件连接，将证明物料悬浮在基材上，并且加速度计通过压阻材料感测证明物质的移动。

公开(公告)号：US08904868B2

公开(公告)日：2014-12-09

申请号：US13458359

申请日：2012-04-27

申请人： Chih-Wei Huang ,  Chieh-Pin Chang ,  Ja-Hao Chen ,  Chuan-Jane Chao ,  Ying-Zong Juang ,  Shyh-Chyi Wong ,  Yeong-Her Wang

发明人： Chih-Wei Huang ,  Chieh-Pin Chang ,  Ja-Hao Chen ,  Chuan-Jane Chao ,  Ying-Zong Juang ,  Shyh-Chyi Wong ,  Yeong-Her Wang

IPC分类号： G01P15/125 ,  G01P15/08

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： A sensing apparatus includes an acceleration sensing unit, for measuring an acceleration applied to a proof mass, further including: a proof mass; a carrier signal source, for providing a carrier signal; a capacitive half-bridge, including a first and a second capacitor, wherein each capacitor is coupled to the proof mass and the carrier signal source, one with a positive electrode and the other one with a negative electrode, and the acceleration applied to the proof mass makes the carrier signal flow through the first and the second capacitor so that the first capacitor and the second capacitor respectively generates a first voltage and a second voltage variation which have opposite phases with each other; and an instrumentation amplifier, for receiving and amplifying the first voltage and the second voltage variation, whereby the magnitude and the direction of the acceleration applied to the proof mass is determined.

摘要翻译： 感测装置包括加速度检测单元，用于测量施加到检验质量块的加速度，还包括：检验质量块; 载波信号源，用于提供载波信号; 包括第一和第二电容器的电容半桥，其中每个电容器耦合到检测质量块和载波信号源，一个具有正电极，另一个与负电极耦合，并且加速度应用于证明 质量使载体信号流过第一和第二电容器，使得第一电容器和第二电容器分别产生彼此具有相反相位的第一电压和第二电压变化; 以及用于接收和放大第一电压和第二电压变化的仪表放大器，由此确定施加到检验质量块的加速度的大小和方向。

公开(公告)号：US09548673B1

公开(公告)日：2017-01-17

申请号：US14948409

申请日：2015-11-23

申请人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Po-Chang Wu ,  Kuei-Cheng Lin ,  Chih-Yuan Yeh

发明人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Po-Chang Wu ,  Kuei-Cheng Lin ,  Chih-Yuan Yeh

IPC分类号： H02M7/04

CPC分类号： H02M7/04 ,  H02M7/103 ,  H02M7/217

摘要： The invention includes two parallel paths. A first path is composed of two contact ends of a first electronic switch and a first, third and fifth diodes, which connect in series. One contact end connects a first end of an AC source, and a control end connects a second end of the AC source. A second path is composed of two contact ends of a second electronic switch and a second, fourth and sixth diodes, which connect in series. One contact end connects the second end of the AC source, and a control end connects the first end of the AC source. The AC source is connected between the positive ends of the first and second diodes. The second end of the AC source separately connects negative ends of the first and third diodes through two capacitors. The first end of the AC source separately connects negative ends of the second and fourth diodes through another two capacitors. Negative ends of the fifth and sixth diodes connect together to form a voltage output end.

摘要翻译： 本发明包括两条平行路径。 第一路径由第一电子开关和串联连接的第一，第三和第五二极管的两个接触端组成。 一个接触端连接AC电源的第一端，控制端连接AC电源的第二端。 第二路径由第二电子开关和串联连接的第二，第四和第六二极管的两个接触端组成。 一个接触端连接AC电源的第二端，控制端连接AC电源的第一端。 AC源连接在第一和第二二极管的正极之间。 交流电源的第二端通过两个电容器将第一和第三二极管的负极分开连接。 交流电源的第一端通过另外两个电容器将第二和第四二极管的负极分开连接。 第五和第六二极管的负端连接在一起形成电压输出端。

公开(公告)号：US08704278B2

公开(公告)日：2014-04-22

申请号：US13419156

申请日：2012-03-13

申请人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Hsin-Hao Liao ,  Chen-Fu Lin

发明人： Ying-Zong Juang ,  Hann-Huei Tsai ,  Hsin-Hao Liao ,  Chen-Fu Lin

IPC分类号： G01N27/403 ,  H01L21/00

CPC分类号： G01N27/4145

摘要： A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.

摘要翻译： 提供了一种用于金属氧化物半导体场效应晶体管（MOSFET）传感器的结构。 该结构包括MOSFET，感测膜和参考电极。 参考电极和感测膜形成在MOSFET的第一表面上并且被布置成使得参考电极和感测膜彼此均匀且电耦合。 因此，感测膜和参考电极之间的电场均匀地分布在其间，以稳定MOSFET传感器的工作信号。

公开(公告)号：US08158063B2

公开(公告)日：2012-04-17

申请号：US12333990

申请日：2008-12-12

申请人： Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

发明人： Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

IPC分类号： G01N15/06 ,  G01N33/00

CPC分类号： B01L3/502707 ,  B01L2200/0689 ,  B01L2300/0636 ,  B01L2300/0816 ,  B01L2400/0439

摘要： A biosensor package structure with a micro-fluidic channel is provided. The biosensor package structure includes a substrate, a biochip, and a cover. The substrate has a first surface, a second surface, and an opening. The biochip is attached on the first surface. A bio-sensing area of the biochip is exposed to the opening of the substrate. The cover is attached on the second surface to cover the opening so as to form a micro-fluidic channel. By implementing the invention, the manufacturing process of the biosensor is simplified and the productivity is increased.

摘要翻译： 提供具有微流体通道的生物传感器封装结构。 生物传感器封装结构包括基板，生物芯片和盖。 基板具有第一表面，第二表面和开口。 生物芯片附着在第一表面上。 生物芯片的生物感测区域暴露于基底的开口。 盖子安装在第二表面上以覆盖开口以便形成微流体通道。 通过实施本发明，简化了生物传感器的制造过程，提高了生产率。

公开(公告)号：US20100315131A1

公开(公告)日：2010-12-16

申请号：US12495107

申请日：2009-06-30

申请人： Chi Sheng Lin ,  Ting-Hsu Chien ,  Chin-Long Wey ,  Chun-Ming Huang ,  Ying-Zong Juang

发明人： Chi Sheng Lin ,  Ting-Hsu Chien ,  Chin-Long Wey ,  Chun-Ming Huang ,  Ying-Zong Juang

IPC分类号： H03B19/00

CPC分类号： H03L7/183 ,  H03K23/425 ,  H03L7/0802

摘要： A programmable frequency divider with a full dividing range includes a plurality of cascaded 2/1 frequency dividers. Each of the 2/1 frequency dividers has a first input node, a first output node, a second input node, a second output node and a third input node. The first input node receives a first clock signal divided by the 2/1 frequency divider and outputted as a second clock signal through the first output node. A second logical signal is generated according to the second clock signal, the first clock signal and a first logical signal received from the second input node. The 2/1 frequency divider selectively switches to perform a divide-by-two or divide-by-one operation according to the second logical signal and a first divisor signal received from the third input nodes. The programmable frequency divider provides the full dividing range as the result of utilizing various divisor of the 2/1 frequency divider.

摘要翻译： 具有全分频范围的可编程分频器包括多个级联的2/1分频器。 2/1分频器中的每一个具有第一输入节点，第一输出节点，第二输入节点，第二输出节点和第三输入节点。 第一输入节点接收由2/1分频器分频的第一时钟信号，并通过第一输出节点作为第二时钟信号输出。 根据第二时钟信号，第一时钟信号和从第二输入节点接收的第一逻辑信号产生第二逻辑信号。 2/1分频器选择性地切换以根据第二逻辑信号和从第三输入节点接收的第一除数信号执行二分频或一分频操作。 作为使用2/1分频器的各种除数的结果，可编程分频器可提供完整的分频范围。

公开(公告)号：US08466521B2

公开(公告)日：2013-06-18

申请号：US12724435

申请日：2010-03-16

申请人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

发明人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

IPC分类号： H01L31/119

CPC分类号： H01L29/78 ,  G01N27/414 ,  H01L29/4958

摘要： A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

摘要翻译： 提供氢离子敏感场效应晶体管及其制造方法。 氢离子敏感场效应晶体管包括半导体衬底，绝缘层，晶体管栅极和感测膜。 在具有源极区域和漏极区域的半导体衬底上限定栅极区域。 绝缘层形成在半导体衬底上的栅极区域内。 晶体管栅极沉积在栅极区内并且包括第一栅极层。 此外，第一栅极层是铝层，并且在其上限定感测窗口。 感测膜是通过氧化第一栅极层而在感测窗内形成的氧化铝膜。 因此，在没有任何膜沉积工艺的情况下形成感测膜，因此简化了制造方法。

公开(公告)号：US20110169056A1

公开(公告)日：2011-07-14

申请号：US12724435

申请日：2010-03-16

申请人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

发明人： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Chen-Fu Lin

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/78 ,  G01N27/414 ,  H01L29/4958

摘要： A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

摘要翻译： 提供氢离子敏感场效应晶体管及其制造方法。 氢离子敏感场效应晶体管包括半导体衬底，绝缘层，晶体管栅极和感测膜。 在具有源极区域和漏极区域的半导体衬底上限定栅极区域。 绝缘层形成在半导体衬底上的栅极区域内。 晶体管栅极沉积在栅极区内并且包括第一栅极层。 此外，第一栅极层是铝层，并且在其上限定感测窗口。 感测膜是通过氧化第一栅极层而在感测窗内形成的氧化铝膜。 因此，在没有任何膜沉积工艺的情况下形成感测膜，因此简化了制造方法。

公开(公告)号：US20100277203A1

公开(公告)日：2010-11-04

申请号：US12489624

申请日：2009-06-23

申请人： Ting Hsu Chien ,  Chi Sheng Lin ,  Chin-Long Wey ,  Chun-Ming Huang ,  Ying-Zong Juang

发明人： Ting Hsu Chien ,  Chi Sheng Lin ,  Chin-Long Wey ,  Chun-Ming Huang ,  Ying-Zong Juang

IPC分类号： H03K5/19

CPC分类号： H03K5/19 ,  H03K5/1534 ,  H03L7/0891 ,  H03L7/10

摘要： An edge-missing detector structure includes a first detector, a first delay unit, a first logic gate, a second detector, a second delay unit, and a second logic gate. After being input separately into the edge-missing detector structure, a first reference signal and a first clock signal are detected by the first and second detectors and then subjected to cycle suppression by the first and second logic gates, respectively, so as to generate a second reference signal and a second clock signal which present a phase difference less than 2π. Moreover, the edge-missing detector structure generates a compensative current corresponding to the number of occurrences of cycle suppression. Thus, a phase-locked loop (PLL) using the edge-missing detector structure can avoid cycle slip problems and achieve fast acquisition of phase lock.

摘要翻译： 边缘丢失检测器结构包括第一检测器，第一延迟单元，第一逻辑门，第二检测器，第二延迟单元和第二逻辑门。 在分别输入到边缘丢失检测器结构中之后，第一和第二检测器检测第一参考信号和第一时钟信号，然后分别由第一和第二逻辑门进行循环抑制，以产生 第二参考信号和呈现小于2＆pgr的相位差的第二时钟信号。 此外，边缘丢失检测器结构产生对应于循环抑制的出现次数的补偿电流。 因此，使用边缘丢失检测器结构的锁相环（PLL）可以避免周期滑移问题并实现锁相的快速采集。

公开(公告)号：US20060105543A1

公开(公告)日：2006-05-18

申请号：US11270523

申请日：2005-11-10

申请人： Fu-Yuan Xiao ,  Ying-Zong Juang ,  Chin-Fong Chiu

发明人： Fu-Yuan Xiao ,  Ying-Zong Juang ,  Chin-Fong Chiu

IPC分类号： H01L21/30

CPC分类号： B81C1/00246 ,  B81C2203/0735 ,  H01L21/764 ,  H01L27/0617 ,  H01L27/08 ,  H01L28/10

摘要： A fully CMOS compatible MEMS multi-project wafer process comprises coating a layer of thick photoresist on a wafer surface, patterning the photoresist to define a micromachining region, and performing a micromachining in the micromachining region to form suspended microstructures.

摘要翻译： 完全CMOS兼容的MEMS多工程晶片工艺包括在晶片表面上涂覆一层厚的光致抗蚀剂，图案化光致抗蚀剂以限定微加工区域，并在微加工区域中进行微机械加工以形成悬浮的微结构。