High dielectric constant nano-structure polymer-ceramic composite
    1.
    发明授权
    High dielectric constant nano-structure polymer-ceramic composite 失效
    高介电常数纳米结构聚合物陶瓷复合材料

    公开(公告)号:US06544651B2

    公开(公告)日:2003-04-08

    申请号:US09860856

    申请日:2001-05-18

    IPC分类号: B32B2738

    摘要: The present invention is directed to polymer-ceramic composites having high dielectric constants formed using polymers containing a metal acetylacetonate (acacs) curing catalyst. In particular, it has been discovered that 5 weight percent Co(III) acac can increase the dielectric constant of DER661 epoxy by about 60%. The high dielectric polymers are combined with fillers, preferably ceramic fillers, to form two phase composites having high dielectric constants. Composites having about 30 to about 90% volume ceramic loading and a high dielectric base polymer, preferably epoxy, have been discovered to have a dielectric constants greater than about 60. Composites having dielectric constants greater than about 74 to about 150 are also disclosed. Also disclosed are embedded capacitors with capacitance densities of at least 25 nF/cm2, preferably at least 35 nF/cm2, most preferably 50 nF/cm2. Methods to increase the dielectric constant of the two phase composites having high dielectric constants are also provided.

    摘要翻译: 本发明涉及使用含有金属乙酰丙酮(acacs)固化催化剂的聚合物形成的具有高介电常数的聚合物 - 陶瓷复合材料。 特别地,已经发现5重量%的Co(III)acac可以使DER661环氧树脂的介电常数提高约60%。 高介电聚合物与填料(优选陶瓷填料)组合以形成具有高介电常数的两相复合材料。 已经发现具有大约30至大约90体积的陶瓷负载和高电介质基础聚合物,优选环氧树脂的复合材料具有大于约60的介电常数。还公开了具有大于约74至约150的介电常数的复合材料。 还公开了具有至少25nF / cm 2,优选至少35nF / cm 2,最优选50nF / cm 2的电容密度的嵌入式电容器。 还提供了增加具有高介电常数的两相复合材料的介电常数的方法。

    Methods for encapsulating electronic devices
    3.
    发明授权
    Methods for encapsulating electronic devices 失效
    封装电子设备的方法

    公开(公告)号:US5348913A

    公开(公告)日:1994-09-20

    申请号:US102926

    申请日:1993-08-06

    IPC分类号: H01L21/48 H01L21/56 H01L21/60

    摘要: In a preferred embodiment of the invention, a substrate (11) is cleaned by immersing it in an organic solvent (17) and subjecting it to acoustic energy, immersing it in alcohol, immersing it in a surfactant, subjecting it to a cascading rinse in deionized water, baking it (FIG. 3 ), and thereafter subjecting it to ultraviolet light in an ozone ambient (FIG. 4). When the foregoing steps are followed, the contact angle is significantly reduced, and an encapsulant (14) that is thereafter applied provides more reliable protection to an encapsulated device (12) from outside contaminants.

    摘要翻译: 在本发明的一个优选实施方案中,通过将基材(11)浸入有机溶剂(17)中并对其进行声能,将其浸入酒精中,将其浸入表面活性剂中,使其进行级联漂洗 去离子水,烘烤(图3),然后在臭氧环境中对其进行紫外线(图4)。 当遵循上述步骤时,接触角显着降低,此后施加的密封剂(14)为外部污染物对封装装置(12)提供更可靠的保护。

    Method for encapsulating integrated circuit
    4.
    发明授权
    Method for encapsulating integrated circuit 失效
    密封电子设备的方法

    公开(公告)号:US5275841A

    公开(公告)日:1994-01-04

    申请号:US921654

    申请日:1992-07-30

    申请人: Ching-Ping Wong

    发明人: Ching-Ping Wong

    IPC分类号: H01L23/29 H01L23/31 B05D5/12

    摘要: A silicone gel encapsulated integrated circuit (12) is placed in a container, the container being partially filled with a silicone elastomer (16) which is much more rugged than the gel. After the elastomer (16) hardens, it completely covers the gel encapsulation (14) and protects it and the integrated circuit device from the effects of rough handling. The gel, however, gives all of the protection from the external environment that it would in the absence of the elastomer encapsulation.

    摘要翻译: 将硅胶封装的集成电路(12)放置在容器中,容器部分地填充有比硅胶更坚固的硅氧烷弹性体(16)。 弹性体(16)硬化后,完全覆盖凝胶封装(14),并保护其和集成电路器件免受粗糙处理的影响。 然而,凝胶在没有弹性体封装的情况下给予外部环境的所有保护。

    Devices featuring silicone elastomers

    公开(公告)号:US5217811A

    公开(公告)日:1993-06-08

    申请号:US944026

    申请日:1992-09-11

    IPC分类号: C08K5/5419

    CPC分类号: C08K5/5419 Y10T428/31663

    摘要: Devices are described in which certain crosslinked silicone polymers are incorporated. These polymers have various functions such as encapsulating agents, surface protective agents or agents to index match optical components (e.g. optical fiber, optical waveguide, etc.) to other optical devices or articles. The polymer is a vinyl-terminated dimethyldiphenylsiloxane copolymer crosslinked with tri- or tetrafunctional silanes in the presence of a platinum catalyst. The phenyl group content of the crosslinked silicone copolymer is adjusted to change the index of refraction of the polymer to the optimum for the particular application contemplated. Polymer preparation procedures are described which yield good optical quality for the polymer as well as optimum physical and chemical properties.

    Method of repairing a defective photomask
    9.
    发明授权
    Method of repairing a defective photomask 失效
    修复缺陷光掩模的方法

    公开(公告)号:US4200668A

    公开(公告)日:1980-04-29

    申请号:US939607

    申请日:1978-09-05

    IPC分类号: C03C17/06 G03F1/72 B05D3/06

    摘要: A method of repairing pin holes in a defective photomask such as one comprising a patterned chromium film on a glass substrate comprises depositing an adhesion promoting film such as siloxane on the surface of the photomask, then depositing a solvent soluble layer such as a photoresist layer over the adhesion promoting layer, a window is then formed through the layers and underlying photomask in the area of the pin hole by burning through these layers by means of a laser. The exposed areas of the window are etched and a metallic film is deposited over the exposed surfaces. Finally, the photomask is treated with solvent for removing the solvent soluble photoresist which also causes the metal film deposited thereon to be removed in all areas except the area of the window.

    摘要翻译: 在玻璃基板上包括图案化铬膜的缺陷光掩模修复针孔的方法包括在光掩模的表面上沉积粘附促进膜如硅氧烷,然后将诸如光致抗蚀剂层的溶剂可溶层沉积在 然后通过用激光烧穿这些层,在针孔的区域中通过层和底层光掩模形成粘合促进层,窗口。 蚀刻窗口的暴露区域,并在暴露的表面上沉积金属膜。 最后,用溶剂处理光掩模以除去溶剂可溶性光致抗蚀剂,这也使得沉积在其上的金属膜在除了窗口区域之外的所有区域中被除去。