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公开(公告)号：US20130039376A1
公开(公告)日：2013-02-14
申请号：US13579259
申请日：2011-02-23
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/0655 , H01S5/2009 , H01S5/2027 , H01S5/3211 , H01S5/34333 , H01S2301/18
摘要： An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound semiconductor material and contains at least one active zone for generating electromagnetic radiation and at least one waveguide layer, which indirectly or directly adjoins the active zone. A waveguide being formed. In addition, the semiconductor layer sequence includes a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone. The waveguide layer indirectly or directly adjoins the cladding layer. An effective refractive index of a mode guided in the waveguide is in this case greater than a refractive index of the carrier.
摘要翻译： 光电子半导体芯片，后者包括在载体上生长的载体和半导体层序列。 半导体层序列基于氮化物化合物半导体材料，并且包含至少一个用于产生电磁辐射的活性区和间接或直接邻接活性区的至少一个波导层。 形成的波导。 此外，半导体层序列包括邻接p掺杂侧的波导层和/或有源区的n掺杂侧上的n包层的p包层。 波导层间接或直接邻接包层。 在这种情况下，在波导中引导的模式的有效折射率大于载体的折射率。
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公开(公告)号：US08916849B2
公开(公告)日：2014-12-23
申请号：US13579259
申请日：2011-02-23
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/0655 , H01S5/2009 , H01S5/2027 , H01S5/3211 , H01S5/34333 , H01S2301/18
摘要： An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound semiconductor material and contains at least one active zone for generating electromagnetic radiation and at least one waveguide layer, which indirectly or directly adjoins the active zone. A waveguide being formed. In addition, the semiconductor layer sequence includes a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone. The waveguide layer indirectly or directly adjoins the cladding layer. An effective refractive index of a mode guided in the waveguide is in this case greater than a refractive index of the carrier.
摘要翻译： 光电子半导体芯片，后者包括在载体上生长的载体和半导体层序列。 半导体层序列基于氮化物化合物半导体材料，并且包含至少一个用于产生电磁辐射的活性区和间接或直接邻接活性区的至少一个波导层。 形成的波导。 此外，半导体层序列包括邻接p掺杂侧的波导层和/或有源区的n掺杂侧上的n包层的p包层。 波导层间接或直接邻接包层。 在这种情况下，在波导中引导的模式的有效折射率大于载体的折射率。
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公开(公告)号：US20110051771A1
公开(公告)日：2011-03-03
申请号：US12920312
申请日：2009-01-28
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01S5/0217 , H01S5/0424 , H01S5/12 , H01S5/18308 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic component contains an epitaxial layer sequence (6) based on a nitride compound semiconductor having an active layer (4) and, wherein the epitaxial growth substrate (1) comprises Al1-xGaxN, where 0
摘要翻译： 光电子部件包含基于具有有源层（4）的氮化物半导体的外延层序列（6），并且其中外延生长衬底（1）包括Al 1-x Ga x N，其中0
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公开(公告)号：US08711893B2
公开(公告)日：2014-04-29
申请号：US12920312
申请日：2009-01-28
IPC分类号： H01S5/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01S5/0217 , H01S5/0424 , H01S5/12 , H01S5/18308 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising Al1-xGaxN, where 0
摘要翻译： 光电子部件包含基于具有活性层的氮化物化合物半导体和包含Al1-xGaxN的外延生长衬底的外延层序列，其中0
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5.发明授权公开(公告)号：US09478945B2
公开(公告)日：2016-10-25
申请号：US14126047
申请日：2012-05-15
IPC分类号： H01L29/49 , H01S5/22 , H01L21/02 , H01L29/20 , H01L29/205
CPC分类号： H01S5/22 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/02647 , H01L29/2003 , H01L29/205
摘要： An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.
摘要翻译： 光电半导体本体具有包括在第一外延步骤中施加到衬底的应变层的衬底。 应变层包括在应变层中垂直形成的至少一个凹部。 在第二外延步骤中，施加到应变层的另一层。 另外的层填充至少一个凹部并且至少在一些区域中覆盖应变层。
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6.发明申请公开(公告)号：US20140138703A1
公开(公告)日：2014-05-22
申请号：US14126047
申请日：2012-05-15
IPC分类号： H01S5/22 , H01L29/20 , H01L21/02 , H01L29/205
CPC分类号： H01S5/22 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/02647 , H01L29/2003 , H01L29/205
摘要： An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.
摘要翻译： 光电半导体本体具有包括在第一外延步骤中施加到衬底的应变层的衬底。 应变层包括在应变层中垂直形成的至少一个凹部。 在第二外延步骤中，施加到应变层的另一层。 另外的层填充至少一个凹部并且至少在一些区域中覆盖应变层。
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公开(公告)号：US20100207098A1
公开(公告)日：2010-08-19
申请号：US12676592
申请日：2008-08-25
IPC分类号： H01L33/04
摘要： A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type, are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.
摘要翻译： 发光结构包括用于注入空穴的p掺杂区域和用于注入电子的n掺杂区域。 在n掺杂区域和p掺杂区域之间布置有第一类型的至少一个InGaN量子阱和第二类型的至少一个InGaN量子阱。 第二类型的InGaN量子阱具有比第一类InGaN量子阱更高的铟含量。
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公开(公告)号：US08390004B2
公开(公告)日：2013-03-05
申请号：US12676592
申请日：2008-08-25
摘要： A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.
摘要翻译： 发光结构包括用于注入空穴的p掺杂区域和用于注入电子的n掺杂区域。 第一类型的至少一个InGaN量子阱和第二类型的至少一个InGaN量子阱布置在n掺杂区域和p掺杂区域之间。 第二类型的InGaN量子阱具有比第一类InGaN量子阱更高的铟含量。
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