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1.发明授权
公开(公告)号：US4632900A
公开(公告)日：1986-12-30
申请号：US708998
申请日：1985-03-07
IPC分类号： C09D5/44 , G03C1/72 , G03C5/00 , G03F7/00 , G03F7/004 , G03F7/022 , G03F7/023 , G03F7/039 , G03F7/16 , G03F7/26 , H01L21/027 , H01L21/30 , H05K3/06 , H05K3/44
CPC分类号： G03F7/004 , G03F7/023 , G03F7/164 , H05K3/064 , H05K2203/0505 , H05K2203/135 , Y10S430/138
摘要： A positive photoresist is electrodeposited onto a substrate, exposed to actinic radiation in a predetermined pattern, and then exposed areas are removed by contact with a developer.When the substrate is a metal-faced laminate, the exposed metal surface may be etched and the residual electrodeposited layer removed by contact with a suitable solvent, optionally after a second, general, exposure to actinic radiation.Suitable electrodepositable positive photoresists include o-nitrocarbinol esters and o-nitrophenyl acetals, their polyesters and end-capped derivatives and quinone diazide sulphonyl esters of phenolic novolaks, having salt-forming groups in the molecule, especially carboxylic acid and amine groups.The process is suitable for the production of printing plates and printed circuits, especially circuits on both sides of a liminate sheet linked conductively through metal-lined holes in the sheet.
摘要翻译： 将正性光致抗蚀剂电沉积到基底上，以预定图案暴露于光化辐射，然后通过与显影剂接触除去暴露的区域。 当基底是金属层压板时，暴露的金属表面可以被蚀刻，并且残留的电沉积层通过与合适的溶剂接触去除，任选地在第二次通用的光化辐射之后。 合适的可电沉积的正性光致抗蚀剂包括邻硝基甲醇酯和邻硝基苯基缩醛，它们的聚酯和封端的衍生物和酚醛清漆的醌二叠氮磺酸酯，在分子中具有成盐基团，特别是羧酸和胺基团。 该方法适用于生产印版和印刷电路，特别是在片材两侧通过金属衬里的孔导电地连接的电路。
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公开(公告)号：US5002858A
公开(公告)日：1991-03-26
申请号：US434599
申请日：1989-11-07
IPC分类号： G03C1/72 , G03C5/00 , G03C5/08 , G03F7/00 , G03F7/004 , G03F7/022 , G03F7/023 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/30 , G03F7/38 , H05K3/06
CPC分类号： G03F7/2022 , G03F7/164 , H05K3/064 , Y10S430/136
摘要： A process for the formation of an image comprises(i) electrodepositing on a conductive surface a layer of a quinone diazide positive photoresist,(ii) subjecting the layer to radiation in a predetermined pattern,(iii) heating the layer such that areas thereof exposed in stage (ii) are rendered insoluble in an aqueous base developer,(iv) subjecting the layer to radiation such that the areas not exposed in stage (ii) are rendered more soluble in an aqueous base developer than the areas rendered insoluble in stage (iii) and(v) removing the areas not exposed in stage (ii) by treatment with an aqueous base developer.The process is useful in the production of printing plates and printed circuits.
摘要翻译： 用于形成图像的方法包括（i）在导电表面上电沉积醌二叠氮化物正性光致抗蚀剂层，（ii）使该层以预定图案进行辐射，（iii）加热该层，使其暴露的区域 在阶段（ii）中使其不溶于碱性显影液，（iv）使该层进行辐射，使得在阶段（ii）中未暴露的区域比在阶段（ iii）和（v）通过用碱性显影剂水溶液处理除去阶段（ii）中未暴露的区域。 该方法可用于生产印版和印刷电路。
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公开(公告)号：US4681923A
公开(公告)日：1987-07-21
申请号：US831685
申请日：1986-02-21
IPC分类号： C08G8/00 , C08G8/04 , C08G8/28 , C08G8/32 , C08G8/36 , C09D5/44 , G03C1/72 , G03C1/73 , G03F7/022 , G03F7/023 , C08L61/14
CPC分类号： G03F7/0236 , C08G8/28 , C09D5/4469 , Y10S430/136 , Y10S522/904
摘要： An electrodepositable photosensitive modified phenolic novolak resin of general formula ##STR1## where Ar.sup.1 represents a divalent aromatic group linked through aromatic carbon atoms to the indicated groups --OR.sup.2 and --CH(R.sup.1)--,Ar.sup.2 represents a trivalent aromatic group linked through aromatic carbon atoms to the indicated groups --OR.sup.2 and --CH(R.sup.1)--,R.sup.1 represents a hydrogen atom or an alkyl, aryl or carboxyl group,R.sup.2 represents a hydrogen atom, an alkyl group which may be substituted by a hydroxyl or alkoxy group, or a group of formula --CO--R.sup.3 --COOH, --SO.sub.2 R.sup.4, --COR.sup.5 or --SO.sub.2 R.sup.5, at least 1% of the groups R.sup.2 representing a group --CO--R.sup.3 --COOH and at least 4% of the groups R.sup.2 representing a group --SO.sub.2 R.sup.4,R.sup.3 denotes a divalent aliphatic, cycloaliphatic, aromatic or araliphatic group,R.sup.4 denotes a 1,2-benzoquinone diazide group or 1,2-naphthoquinone diazide groupR.sup.5 denotes a carboxyl-free monovalent group, andn denotes zero or an integer of 1 to 20.The resins are useful in printed circuit manufacture.
摘要翻译： 一种通式为其中Ar1表示通过芳香族碳原子连接到指定基团-OR 2和-CH（R 1） - 的二价芳族基团的可电沉积光敏改性酚醛清漆树脂，Ar2表示通过芳族碳连接的三价芳族基团 原子与指定基团-OR2和-CH（R1） - ，R1表示氢原子或烷基，芳基或羧基，R2表示氢原子，可被羟基或烷氧基取代的烷基，或 式-CO-R3-COOH，-SO2R4，-COR5或-SO2R5的基团，代表-CO-R3-COOH基团的基团的至少1％和至少4％的基团R 2代表基团 - SO 2 R 4，R 3表示二价脂肪族，脂环族，芳香族或芳脂族基团，R4表示1,2-苯醌二叠氮基或1,2-萘醌二叠氮基，R5表示无羧基的一价基，n表示0或整数 该树脂可用于印刷电路制造 回覆。
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4.发明授权
公开(公告)号：US5080998A
公开(公告)日：1992-01-14
申请号：US629099
申请日：1990-12-17
CPC分类号： G03F7/164 , G03F7/0236
摘要： A process for the formation of an image comprises(i) electrodepositing on a conductive surface a photosensitive film from an aqueous composition which is a solution or dispersion comprising a mixture of (A) a photosensitive o-quinone diazide such as an o-naphthoquinone diazide sulfonyl ester of a phenol, and (B) an electrodepositable film-forming resin such as a reaction product of a novolak resin, formaldehyde and diethanolamine in (C) an aqueous medium, the composition being substantially free from a resin having both a quinone diazide residue and a carboxyl, phosphonic or sulfonic acid group or amino group in the same molecule,(ii) subjecting the electrodeposited film to radiation in a predetermined pattern, such that exposed areas of the film become more soluble in aqueous base than unexposed areas, and(iii) removing the exposed areas by treatment with an aqueous base.The process is useful in the production of printing plates and printed circuits.
摘要翻译： 一种用于形成图像的方法包括（i）在水性组合物上将导电表面电沉积在感光膜上，所述水性组合物是包含（A）光敏邻醌二叠氮化物如邻萘醌二叠氮化物的混合物的溶液或分散体 苯酚的磺酰基酯，（B）可溶性成膜树脂，例如酚醛清漆树脂，甲醛和二乙醇胺的反应产物，（C）水性介质，该组合物基本上不含具有醌二叠氮化物 残留物和相同分子中的羧基，膦酸或磺酸基团或氨基，（ii）使电沉积膜以预定图案进行辐射，使得膜的暴露区域比未曝光区域更易溶于碱性水溶液，以及 （iii）通过用碱水溶液处理除去暴露的区域。 该方法可用于生产印版和印刷电路。
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公开(公告)号：US4857437A
公开(公告)日：1989-08-15
申请号：US129579
申请日：1987-12-07
CPC分类号： G03F7/0955 , G03F7/029 , G03F7/2022 , Y10S430/148
摘要： A process for the formation of an image comprises(i) applying to a substrate a layer of a liquid composition comprising(A) a residue which is cationically polymerizable or polymerizable by means of free radicals,(B) a radiation-activated polymerization initiator for (A) and(C) a radiation-solubilizable residue,(ii) subjecting the composition to radiation having a wavelength at which (B) is activated but at which (C) is not substantially activated, optionally followed by heating, thereby polymerizing (A) such that the layer of liquid composition is solidified,(iii) subjecting the solidified layer in a predetermined pattern to radiation having a wavelength which is different from that of the radiation used in stage (ii) and at which the residue (C) is activated, such that the solidified layer is rendered more soluble in a developer in exposed areas than in unexposed areas, and(iv) removing the exposed areas by treatment with a developer.The process is useful in the production of printing plates and printed circuits.
摘要翻译： 一种用于形成图像的方法包括（i）向基底施加一层液体组合物，该层包含（A）通过自由基阳离子聚合或可聚合的残基，（B）辐射活化聚合引发剂 （A）和（C）可辐射溶解的残余物，（ii）使组合物经受波长为（B）被激活但在（C）基本上不活化的波长的辐射，任选地随后加热，从而聚合（ A），使得液体组合物层固化，（iii）使预定图案中的固化层经受与阶段（ii）中使用的辐射不同的波长的辐射，其中残余物（C） 被激活，使得固化层在暴露区域中比在未曝光区域中更可溶于显影剂，和（iv）通过用显影剂处理除去曝光区域。 该方法可用于生产印版和印刷电路。
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公开(公告)号：US4746399A
公开(公告)日：1988-05-24
申请号：US59646
申请日：1987-06-08
CPC分类号： H05K3/061 , H05K2203/0582 , H05K2203/0783 , H05K2203/135 , Y10T29/49155
摘要： The present invention provides a method for making a metallic pattern on a substrate having a surface comprising bare metal in predetermined areas and metal coated by a resist in remaining areas which comprises (i) protecting the bare metal by electrodepositing a resin thereon, (ii) while leaving the electrodeposited resin substantially uncured, removing the resist from said remaining areas using a solvent which will not remove the electrodeposited resin, thereby exposing metal in said remaining areas, (iii) etching the metal exposed in (ii) using an etchant which does not remove the electrodeposited resin, and (iv) removing the electrodeposited resin with a suitable solvent.
摘要翻译： 本发明提供了一种用于在预定区域中具有裸露金属表面的金属图案的制造方法和在剩余区域中由抗蚀剂涂覆的金属，其包括（i）通过在其上电沉积树脂来保护裸露金属，（ii） 同时使电沉积树脂基本上未固化，使用不会除去电沉积树脂的溶剂从所述剩余区域除去抗蚀剂，从而暴露所述剩余区域中的金属，（iii）使用蚀刻剂蚀刻在（ii）中暴露的金属， 不去除电沉积树脂，（iv）用合适的溶剂去除电沉积树脂。
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7.发明授权Photosensitive and electrodepositable phenolic resin with quinone diazide sulfonyloxy group 失效醌二叠氮磺酰氧基的光敏和电沉积酚醛树脂
公开(公告)号：US4839253A
公开(公告)日：1989-06-13
申请号：US91328
申请日：1987-08-28
CPC分类号： C09D5/4469 , C08G8/28 , G03F7/023 , G03F7/164 , Y10S522/904
摘要： An electrodepositable photosensitive resin which is a phenolic novolak resin having(i) at least part of the phenolic hydroxyl groups thereof replaced by a quinone diazide sulphonyloxy group, and(ii) at least part of the aromatic rings thereof substituted in a position ortho and/or para to a phenolic hydroxyl group or quinone diazide sulphonyloxy group by a group of formula --CH(R.sup.1)R.sup.2 whereR.sup.1 represents a hydrogen atom, or an alkyl, aryl or carboxylic acid group, andR.sup.2 represents a sulphonic acid group --SO.sub.3 H or a group of formula --A--R.sup.3 --X,R.sup.3 represents an aliphatic, aromatic or araliphatic divalent group which may be substituted by a carboxlic, sulphonic or phosphonic acid group,A represents a sulphur atom or a group of formula --N(R.sup.4)--, where R.sup.4 represents a hydrogen atom or an alkyl group which may be substituted by a carboxylic acid group or by an optionally etherified hydroxyl group, or R.sup.3 and R.sup.4 together represent an alkylene chain of 2 to 5 carbon atoms linked to the indicated nitrogen atom, which may contain an oxygen atom or an additional nitrogen atom in the chain, andX denotes a carboxylic or sulphonic acid group or, where A denotes --N(R.sup.4)--, X may further represent a phosphonic acid group, an amino group of formula --N(R.sup.5)(R.sup.6), a hydrogen atom or a hydroxyl group, andRhu 5 and R.sup.6 which may be the same or different, each represent a hydrogen atom or an alkyl, aryl, aralkyl or alkenyl group, any of which may be substituted by a hydroxyl group.The resins are useful in the manufacture of printed circuits.
摘要翻译： 一种可电沉积的感光性树脂，其为酚醛清漆树脂，其具有（i）至少部分酚羟基被醌二叠氮基磺酰氧基取代，和（ii）至少部分芳环被取代为邻位和/ 或对位酚基羟基或醌二叠氮磺酰氧基，其中R 1表示氢原子或烷基，芳基或羧酸基团，R 2表示磺酸基-SO 3 H或 式-A-R3-X的基团，R3表示可被羧基，磺酸或膦酸基团取代的脂族，芳族或芳脂族二价基团，A表示硫原子或式-N（R4） - ，其中R 4表示氢原子或可以被羧酸基团取代的烷基或任选地醚化的羟基，或者R 3和R 4一起表示与所指示的连接的2至5个碳原子的亚烷基链 氮原子，其可以在链中含有氧原子或另外的氮原子，X表示羧酸或磺酸基团，或者其中A表示-N（R4） - ，X可以进一步代表膦酸基团，氨基 式-N（R5）（R6），氢原子或羟基的基团，以及可以相同或不同的Rhu5和R6各自表示氢原子或烷基，芳基，芳烷基或烯基，任何 可以被羟基取代。 这些树脂可用于制造印刷电路。
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公开(公告)号：US4618564A
公开(公告)日：1986-10-21
申请号：US738197
申请日：1985-05-24
CPC分类号： G03F7/0045 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/124 , Y10S430/125
摘要： Positive images are produced by (i) exposing to actinic radiation in a predetermined pattern a composition supported on a substrate, which composition comprises a film-forming organic material and a substance which releases a sulphonic acid on exposure to actinic radiation, thereby rendering the composition more soluble in the developer in the exposed areas than the unexposed areas, and (ii) treating the composition with the aqueous base developer to remove the unexposed areas. The image-forming process may be used in the production of printing plates and electrical circuits.
摘要翻译： 通过（i）以预定图案曝光负载在基底上的组合物的光化辐射来产生正像，该组合物包含成膜有机材料和在暴露于光化辐射下释放磺酸的物质，从而使组合物 在暴露区域中比未曝光区域更易溶于显影剂，和（ii）用碱性显影剂水溶液处理组合物以去除未曝光区域。 图像形成过程可以用于印刷版和电路的制造。
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公开(公告)号：US20070012907A1
公开(公告)日：2007-01-18
申请号：US11533036
申请日：2006-09-19
申请人： Steven Hill , Peter Mascher , Jacek Wojcik , Edward Irving
发明人： Steven Hill , Peter Mascher , Jacek Wojcik , Edward Irving
IPC分类号： H01L29/06
CPC分类号： B82Y15/00 , B82Y20/00 , B82Y30/00 , C09K11/77 , C09K11/7706 , H01S3/09403
摘要： The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.
摘要翻译： 掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）分布在IV族氧化物层中的半导体纳米晶体的30至50原子％ c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体纳米晶体的表面上，以及（ii）基本上相等地分布在IV族氧化物的厚度上 层。 本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。
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公开(公告)号：US20050148598A1
公开(公告)日：2005-07-07
申请号：US10497731
申请日：2002-12-06
申请人： Paul O'Neill , Adrian Higson , Sara Taylor , Edward Irving
发明人： Paul O'Neill , Adrian Higson , Sara Taylor , Edward Irving
IPC分类号： C07D493/18 , C07D519/00 , A61K31/496 , A61K31/355 , C07D493/14
CPC分类号： C07D493/18 , C07D519/00
摘要： The present invention relates to compounds of general formula (13), and pharmaceutically acceptable salts thereof, in which: n=an integer of from 1 to 4; A represents a trioxane-containing residue; B represents a group having the general formula: -D-E-F-, in which D is linked to A and represents an atom or group selected from the following (a, b, c, d), E represents a bivalent, optionally substituted organic radical; and F is linked to C and represents a group selected from the following: (e, f, g, h) and C represents a group containing at least two nitrogen atoms, (13).
摘要翻译： 本发明涉及通式（13）的化合物及其药学上可接受的盐，其中：n = 1至4的整数; A表示含三氧杂环己烷的残基; B表示具有以下通式的基团：-D-E-F-，其中D与A连接并且表示选自以下（a，b，c，d）中的原子或基团，E表示二价任选取代的有机基团; 并且F与C连接并且表示选自以下的基团：（e，f，g，h），C表示含有至少两个氮原子的基团，（13）。
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