USE OF DOPANTS WITH DIFFERENT DIFFUSIVITIES FOR SOLAR CELL MANUFACTURE
    1.
    发明申请
    USE OF DOPANTS WITH DIFFERENT DIFFUSIVITIES FOR SOLAR CELL MANUFACTURE 有权
    用于太阳能电池制造的不同扩散剂的使用

    公开(公告)号:US20090227097A1

    公开(公告)日:2009-09-10

    申请号:US12397542

    申请日:2009-03-04

    IPC分类号: H01L21/22

    摘要: A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.

    摘要翻译: 公开了通过利用两种不同的掺杂剂来调整衬底的掺杂剂分布的方法,每种掺杂剂具有不同的扩散率。 衬底可以是例如太阳能电池。 通过引入两种不同的掺杂剂,例如通过离子注入,炉扩散或糊状物,可以产生所需的掺杂剂分布。 此外,掺杂剂可以同时,部分同时或顺序地引入。 掺杂剂对优选由一种较轻的物质和一种较重的物质组成,其中较轻的物质具有较大的扩散系数。 例如,可以使用诸如硼和镓,硼和铟,磷和砷的掺杂物对,以及磷和锑。

    Use of dopants with different diffusivities for solar cell manufacture
    2.
    发明授权
    Use of dopants with different diffusivities for solar cell manufacture 有权
    使用具有不同扩散性的掺杂剂用于太阳能电池制造

    公开(公告)号:US08461032B2

    公开(公告)日:2013-06-11

    申请号:US12397542

    申请日:2009-03-04

    IPC分类号: H01L21/425

    摘要: A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.

    摘要翻译: 公开了通过利用两种不同的掺杂剂来调整衬底的掺杂剂分布的方法,每种掺杂剂具有不同的扩散率。 衬底可以是例如太阳能电池。 通过引入两种不同的掺杂剂,例如通过离子注入,炉扩散或糊状物,可以产生所需的掺杂剂分布。 此外,掺杂剂可以同时,部分同时或顺序地引入。 掺杂剂对优选由一种较轻的物质和一种较重的物质组成,其中较轻的物质具有较大的扩散系数。 例如,可以使用诸如硼和镓,硼和铟,磷和砷的掺杂物对,以及磷和锑。

    ESTABLISHING A HIGH PHOSPHORUS CONCENTRATION IN SOLAR CELLS
    3.
    发明申请
    ESTABLISHING A HIGH PHOSPHORUS CONCENTRATION IN SOLAR CELLS 审中-公开
    建立太阳能电池中的高磷浓度

    公开(公告)号:US20090227061A1

    公开(公告)日:2009-09-10

    申请号:US12397596

    申请日:2009-03-04

    IPC分类号: H01L31/18

    摘要: Methods of controlling the diffusion of a dopant in a solar cell are disclosed. A second species is used in conjunction with the dopant to modify the diffusion region. For example, phosphorus and boron both diffuse by pairing with interstitial silicon atoms. Thus, by controlling the creation and location of these interstitials, the diffusion rate of the dopant can be controlled. In one embodiment, a heavier element, such as germanium, argon or silicon, is used to create interstitials. Because of the presence of these heavier elements, the dopant diffuses deeper into the substrate. In another embodiment, carbon is implanted. Carbon reduces the number of interstitials, and thus can be used to limit the diffusion of the dopant. In another embodiment, a lighter element, such as helium is used to amorphize the substrate. The crystalline-amorphous interface created limits diffusion of the dopant into the substrate.

    摘要翻译: 公开了控制太阳能电池中掺杂剂扩散的方法。 第二种与掺杂剂结合使用以改变扩散区。 例如,磷和硼通过与间隙硅原子配对而扩散。 因此,通过控制这些间隙的产生和位置,可以控制掺杂剂的扩散速率。 在一个实施例中,使用较重的元素,例如锗,氩或硅,以产生间隙。 由于这些较重的元素的存在,掺杂剂扩散到衬底中。 在另一个实施方案中,植入碳。 碳减少了间隙的数量,因此可用于限制掺杂剂的扩散。 在另一个实施方案中,使用诸如氦的较轻元素​​使基底无定形。 产生的晶体 - 非晶界面限制了掺杂剂到衬底中的扩散。

    Maskless Doping Technique for Solar Cells
    4.
    发明申请
    Maskless Doping Technique for Solar Cells 审中-公开
    太阳能电池无掩模掺杂技术

    公开(公告)号:US20090317937A1

    公开(公告)日:2009-12-24

    申请号:US12200117

    申请日:2008-08-28

    IPC分类号: H01L21/00

    摘要: A improved, lower cost method of producing solar cells utilizing selective emitter design is disclosed. The contact regions are created on the substrate without the use of lithography or masks. The method utilizes ion implantation technology, and the relatively low accuracy requirements of the contact regions to reduce the process steps needed to produce a solar cell. In some embodiments, the current of the ion beam is selectively modified to create the highly doped contact regions. In other embodiments, the ion beam is focused, either through the use of an aperture or via adjustments to the beam line components to create the necessary doping profile. In still other embodiments, the wafer scan rate is modified to create the desired ion implantation pattern.

    摘要翻译: 公开了一种利用选择性发射极设计制造太阳能电池的成本较低的方法。 在不使用光刻或掩模的情况下,在基板上形成接触区域。 该方法利用离子注入技术,并且接触区域的相对低的精度要求减少了生产太阳能电池所需的工艺步骤。 在一些实施例中,选择性地修改离子束的电流以产生高度掺杂的接触区域。 在其他实施例中,离子束通过使用孔径或通过调整到束线分量来聚焦以产生必要的掺杂分布。 在其他实施例中,晶片扫描速率被修改以产生期望的离子注入图案。

    Self-aligned ion implantation for IBC solar cells
    5.
    发明授权
    Self-aligned ion implantation for IBC solar cells 有权
    IBC太阳能电池的自对准离子注入

    公开(公告)号:US08735234B2

    公开(公告)日:2014-05-27

    申请号:US13028562

    申请日:2011-02-16

    摘要: An improved method of doping a substrate is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A paste having a dopant of a first conductivity is applied to the surface of the substrate. This paste serves as a mask for a subsequent ion implantation step, allowing ions of a dopant having an opposite conductivity to be introduced to the portions of the substrate which are exposed. After the ions are implanted, the mask can be removed and the dopants may be activated. Methods of using an aluminum-based and phosphorus-based paste are disclosed.

    摘要翻译: 公开了改进的掺杂衬底的方法。 该方法特别有利于产生叉指式背接触(IBC)太阳能电池。 将具有第一导电性的掺杂剂的糊剂施加到基板的表面。 该糊剂用作随后的离子注入步骤的掩模,允许具有相反电导率的掺杂剂的离子被引入到暴露的衬底的部分。 离子注入后,可以去除掩模,并且可以激活掺杂剂。 公开了使用铝基和磷基糊的方法。

    Use of chained implants in solar cells
    6.
    发明授权
    Use of chained implants in solar cells 有权
    在太阳能电池中使用链式植入物

    公开(公告)号:US07727866B2

    公开(公告)日:2010-06-01

    申请号:US12397634

    申请日:2009-03-04

    IPC分类号: H01L21/425

    摘要: The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

    摘要翻译: 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外,使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中,连续地植入两种不同的物质而不破坏真空。 在另一个实施例中,植入衬底,然后翻转,使得其可以在被退火之前两面植入。 在另一个实施例中,施加一个或多个不同的掩模,并且在不破坏真空条件的情况下执行连续的注入,由此减少处理时间。

    USE OF CHAINED IMPLANTS IN SOLAR CELLS
    7.
    发明申请
    USE OF CHAINED IMPLANTS IN SOLAR CELLS 有权
    在太阳能电池中使用链状植入物

    公开(公告)号:US20090227094A1

    公开(公告)日:2009-09-10

    申请号:US12397634

    申请日:2009-03-04

    IPC分类号: H01L21/266

    摘要: The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

    摘要翻译: 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外,使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中,连续地植入两种不同的物质而不破坏真空。 在另一个实施例中,植入衬底,然后翻转,使得其可以在退火之前两面植入。 在另一个实施例中,施加一个或多个不同的掩模,并且在不破坏真空条件的情况下执行连续的注入,由此减少处理时间。

    ANGLED MULTI-STEP MASKING FOR PATTERNED IMPLANTATION
    8.
    发明申请
    ANGLED MULTI-STEP MASKING FOR PATTERNED IMPLANTATION 有权
    用于图形植入的多边形掩模

    公开(公告)号:US20120214273A1

    公开(公告)日:2012-08-23

    申请号:US13029840

    申请日:2011-02-17

    IPC分类号: H01L21/265

    摘要: An improved method of tilting a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. The mask and substrate are tilted at a first angle relative to the incoming ion beam. After the substrate is exposed to the ion beam, the mask and substrate are tilted at a second angle relative to the ion beam and a subsequent implant step is performed. Through the selection of the aperture size and shape, the cross-section of the mask, the distance between the mask and the substrate and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions.

    摘要翻译: 公开了一种倾斜掩模以执行衬底的图案植入的改进方法。 掩模具有多个孔,并且被放置在离子源和基底之间。 掩模和基底相对于入射离子束以第一角度倾斜。 在衬底暴露于离子束之后,掩模和衬底相对于离子束以第二角度倾斜,并且执行随后的注入步骤。 通过选择孔径尺寸和形状,掩模的横截面,掩模和衬底之间的距离以及植入步骤的数量,可以产生各种种植体图案。 在一些实施例中,注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。 在一些实施例中,植入模式包括重掺杂区域格栅。

    Integrated Shadow Mask/Carrier for Pattern Ion Implantation
    9.
    发明申请
    Integrated Shadow Mask/Carrier for Pattern Ion Implantation 失效
    用于图案离子植入的集成阴影掩模/载体

    公开(公告)号:US20120083102A1

    公开(公告)日:2012-04-05

    申请号:US12895927

    申请日:2010-10-01

    IPC分类号: H01L21/71 H01J37/20

    摘要: An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.

    摘要翻译: 公开了一种改进的,低成本的处理衬底的方法,例如制造太阳能电池。 此外,公开了改进的基板载体。 通常用于承载衬底的载体被修改为用作图案化植入物的荫罩。 在一些实施例中,可以使用载体创建各种图案,使得可以通过用载体改变载体或位置来在基板上执行不同的工艺步骤。 此外,由于基板与载体的对准是关键的,所以载体可以包含对准特征以确保基板正确地定位在载体上。 在一些实施例中,使用重力来将衬底保持在载体上,因此,引导离子使得离子束朝向载体的底侧向上移动。

    COUNTERDOPING FOR SOLAR CELLS
    10.
    发明申请
    COUNTERDOPING FOR SOLAR CELLS 审中-公开
    太阳能电池的对策

    公开(公告)号:US20090227095A1

    公开(公告)日:2009-09-10

    申请号:US12397646

    申请日:2009-03-04

    摘要: Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. Traditionally, a plurality of lithography and doping steps are required to achieve this desired configuration. In contrast, one lithography step can be eliminated by the use of a blanket doping of one conductivity and a mask patterned counterdoping process of the opposite conductivity. The areas dosed during the masked patterned doping receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In another embodiment, the counterdoping is performed by means of a direct patterning technique, thereby eliminating the remaining lithography step. Various methods of direct counterdoping processes are disclosed.

    摘要翻译: 公开了一种太阳能电池,特别是IBC太阳能电池的反掺杂方法。 太阳能电池的一个表面可能需要部分被n掺杂,而其它部分是p掺杂的。 传统上,需要多个光刻和掺杂步骤来实现这种期望的配置。 相比之下,可以通过使用一种导电性的覆盖掺杂和具有相反电导率的掩模图案化反向掺杂工艺来消除一个光刻步骤。 在掩模图案化掺杂期间计量的面积接收足够的剂量,以完全反转覆盖掺杂的效果,并获得与覆盖掺杂相反的电导率。 在另一个实施例中,通过直接图案化技术执行反掺杂,从而消除了剩余的光刻步骤。 公开了各种直接反打法的方法。