摘要:
A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.
摘要:
A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.
摘要:
Methods of controlling the diffusion of a dopant in a solar cell are disclosed. A second species is used in conjunction with the dopant to modify the diffusion region. For example, phosphorus and boron both diffuse by pairing with interstitial silicon atoms. Thus, by controlling the creation and location of these interstitials, the diffusion rate of the dopant can be controlled. In one embodiment, a heavier element, such as germanium, argon or silicon, is used to create interstitials. Because of the presence of these heavier elements, the dopant diffuses deeper into the substrate. In another embodiment, carbon is implanted. Carbon reduces the number of interstitials, and thus can be used to limit the diffusion of the dopant. In another embodiment, a lighter element, such as helium is used to amorphize the substrate. The crystalline-amorphous interface created limits diffusion of the dopant into the substrate.
摘要:
A improved, lower cost method of producing solar cells utilizing selective emitter design is disclosed. The contact regions are created on the substrate without the use of lithography or masks. The method utilizes ion implantation technology, and the relatively low accuracy requirements of the contact regions to reduce the process steps needed to produce a solar cell. In some embodiments, the current of the ion beam is selectively modified to create the highly doped contact regions. In other embodiments, the ion beam is focused, either through the use of an aperture or via adjustments to the beam line components to create the necessary doping profile. In still other embodiments, the wafer scan rate is modified to create the desired ion implantation pattern.
摘要:
An improved method of doping a substrate is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A paste having a dopant of a first conductivity is applied to the surface of the substrate. This paste serves as a mask for a subsequent ion implantation step, allowing ions of a dopant having an opposite conductivity to be introduced to the portions of the substrate which are exposed. After the ions are implanted, the mask can be removed and the dopants may be activated. Methods of using an aluminum-based and phosphorus-based paste are disclosed.
摘要:
The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.
摘要:
The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.
摘要:
An improved method of tilting a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. The mask and substrate are tilted at a first angle relative to the incoming ion beam. After the substrate is exposed to the ion beam, the mask and substrate are tilted at a second angle relative to the ion beam and a subsequent implant step is performed. Through the selection of the aperture size and shape, the cross-section of the mask, the distance between the mask and the substrate and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions.
摘要:
An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.
摘要:
Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. Traditionally, a plurality of lithography and doping steps are required to achieve this desired configuration. In contrast, one lithography step can be eliminated by the use of a blanket doping of one conductivity and a mask patterned counterdoping process of the opposite conductivity. The areas dosed during the masked patterned doping receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In another embodiment, the counterdoping is performed by means of a direct patterning technique, thereby eliminating the remaining lithography step. Various methods of direct counterdoping processes are disclosed.