摘要:
Well bias circuitry for selectively biasing the voltages of the well areas of an integrated circuit. In one embodiment, the well bias circuitry includes a switching cell located in a row of cells of the integrated circuit for selectively coupling a voltage supply line to a well bias line. The switching cell may include two level shifters, each for providing a voltage to a gate of a coupling transistor to make the coupling transistor non conductive in response to an enable signal. The switching cells may be sequentially coupled such that the coupling transistors of each of the switching cells are not made conductive at the same time so as to reduce inrush current due to changing the well bias from a well bias voltage to a supply voltage. In one example, the switching cells may include delay circuitry for delaying the change in state of the enable signal before being provided to the next switching cell.
摘要:
Well bias circuitry for selectively biasing the voltages of the well areas of an integrated circuit. In one embodiment, the well bias circuitry includes a switching cell located in a row of cells of the integrated circuit for selectively coupling a voltage supply line to a well bias line. The switching cell may include two level shifters, each for providing a voltage to a gate of a coupling transistor to make the coupling transistor non conductive in response to an enable signal. The switching cells may be sequentially coupled such that the coupling transistors of each of the switching cells are not made conductive at the same time so as to reduce inrush current due to changing the well bias from a well bias voltage to a supply voltage. In one example, the switching cells may include delay circuitry for delaying the change in state of the enable signal before being provided to the next switching cell.
摘要:
A method of power gating a latch including detecting a state of the latch, detecting a power gate signal, providing power to the latch while the power gate signal is negated, and removing power from the latch when the power gate signal is asserted and the latch is in a predetermined state. The method may include any one or more of pulling a node of the latch to a selected state while the power gate signal is asserted to ensure that the latch powers up in the predetermined state, providing a signal indicative of the latch state and the power gate signal to respective inputs of a logic gate having an output indicative thereof, switching a supply voltage to a power input of the latch based on a state of the output of the logic gate, and closing a switch to pull a node of the latch low.
摘要:
A level shifter for an integrated circuit. In one embodiment, the level shifter is a bi-directional level shifter with a signal terminal located in each voltage domain that can be utilized as input or output terminal. In some embodiments, the level shifter includes transistors for cutting off the flow of current between domain power supplies when the input terminals are at a particular state. In one embodiment, only one signal line of the level shifter crosses a domain boundary.
摘要:
One surface of a semiconductor component attached to one surface of a header with an opposite surface of the component having an optical input/output positioned adjacent one end of an optical fiber. The component and optical fiber are fixedly attached with no strain by a curable gel with the header acting as a heat sink. Electrical contacts are made to the component by means of leads formed on the header and/or a conductive coating deposited on the optical fiber.
摘要:
A signal processing circuit (10) performs a sample and hold (16) of an input signal (14) and stores a maximum value of the input signal (18). A guardband signal (21) is developed that is less than the maximum value that is stored. The input signal is compared to the guardband signal to determine if the input signal is above or below the guardband signal. A threshold signal (25) is developed by taking a percentage of the maximum value that is stored. The input signal is compared to the threshold signal to regenerate the input waveform. If the input signal is below the guardband signal and above the threshold signal, the sample and hold circuit is reset to acquire a new maximum value of the input signal so that a new threshold can be used for regenerating the input signal.
摘要:
A substrate having a photonic device mounted thereon with a working portion that is operably connected to at least one electrical lead. A molded optical portion having a surface for light signal to enter and to exit is formed that encapsulates the substrate, the photonic device, and a portion of the first and second electrical lead. An optical connector is formed to plug into the molded optical portion to connect a fiber bundle thereto and the optical portion is electrically connected to an interconnect module.
摘要:
A molded optical interconnect is provided. A plurality of electrical tracings is disposed thereon. An optical module having an optical surface and a photonic device are operably coupled to an interconnect substrate. A molded optical portion having a core region with a first end and a cladding region is positioned with the first end of the core region being adjacent to the optical surface of the integrated circuit to operably couple the first end of the core region to the optical surface of the integrated circuit.
摘要:
A common base amplifier (29) has an input (31) and an output (32). A transistor (33) has an emitter coupled to the input (31) of the amplifier (29), a collector coupled to the output (32) of the amplifier (29), and a base coupled to a voltage reference (34) provides low input impedance and unity current gain. A control circuit (38) controls a first bias circuit (36) and a second bias circuit (37). The second bias circuit (37) is coupled to the collector of the transistor (33) and provides a bias current for the transistor (33) while transistor (33) outputs the bias current which is received by the first bias circuit (36). Control circuit (38) determines the current magnitude for both the first bias circuit (36) and the second bias circuit (37) and ensures that the current magnitudes are maintained at a fixed ratio.
摘要:
A method for manufacturing a molded waveguide (50) is provided. A first cladding layer (20) is provided. Channels (21) are formed in the first cladding layer (20). A second cladding layer (40) is subsequently provided. The channels (21) in the first cladding layer (20) are then filled with an optically transparent polymer. The second cladding layer (40) is subsequently affixed over the channels (21) of the first cladding layer (20), thereby enclosing the channels (21).