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    Process for fabricating high density memory cells using a metallic hard mask
    3.
    发明授权
    Process for fabricating high density memory cells using a metallic hard mask 有权
    使用金属硬掩模制造高密度记忆单元的方法

    公开(公告)号：US06399446B1

    公开(公告)日：2002-06-04

    申请号：US09429722

    申请日：1999-10-29

    申请人： Bharath Rangarajan ,  David K. Foote ,  Fei Wang ,  Dawn M. Hopper ,  Stephen K. Park ,  Jack Thomas ,  Mark Chang ,  Mark Ramsbey

    发明人： Bharath Rangarajan ,  David K. Foote ,  Fei Wang ,  Dawn M. Hopper ,  Stephen K. Park ,  Jack Thomas ,  Mark Chang ,  Mark Ramsbey

    IPC分类号： H01L218247

    CPC分类号： H01L27/11568 ,  H01L27/115 ,  Y10S438/945

    摘要： A process for fabricating a memory cell in a two-bit EEPROM device including forming an ONO layer overlying a semiconductor substrate, depositing a hard mask overlying the ONO layer, and patterning the hard mask. The hard mask is made from tungsten, titanium, or titanium nitride. The process further includes doping the semiconductor substrate with boron causing p-type regions to form in the semiconductor substrate, and doping the semiconductor substrate with n-type dopants, such as arsenic, causing n-type regions to form in the semiconductor substrate. The exposed ONO layer is then etched to expose part of the semiconductor substrate, and a bit-line oxide region is formed overlying the semiconductor substrate. The hard mask is then stripped, preferably using an H2O2 solution.

    摘要翻译： 一种用于在二位EEPROM器件中制造存储单元的方法，包括形成覆盖在半导体衬底上的ONO层，沉积覆盖在ONO层上的硬掩模，以及对该硬掩模进行构图。 硬掩模由钨，钛或氮化钛制成。 该工艺还包括用硼掺杂导致在半导体衬底中形成p型区域的半导体衬底，并且用诸如砷的n型掺杂剂掺杂半导体衬底，从而在半导体衬底中形成n型区域。 然后对暴露的ONO层进行蚀刻以暴露半导体衬底的一部分，并且在半导体衬底上形成位线氧化物区域。 然后将硬掩模剥离，优选使用H 2 O 2溶液。

    Transmission system for a document feeder
    4.
    发明授权
    Transmission system for a document feeder 失效
    文件传送系统

    公开(公告)号：US5494271A

    公开(公告)日：1996-02-27

    申请号：US257570

    申请日：1994-06-10

    申请人： Jeffrey Wun ,  Steven Chiu ,  Mark Chang

    发明人： Jeffrey Wun ,  Steven Chiu ,  Mark Chang

    IPC分类号： B65H3/06 ,  B65H5/06

    CPC分类号： B65H3/0669 ,  Y10T74/19172 ,  Y10T74/1921

    摘要： An improved transmission system for a document feeder, in which a constant one-way-rotating gear train is mounted in an output zone so as to cause a transmission shaft in the output zone to rotate in one direction only to send out a sheet of document no matter the driving gear rotates clockwise or counter-clockwise; therefore, as soon as a first sheet of document moves out of the scanning line without moving out of the output zone, the driving gear will change its rotation clockwise so as to have a next sheet of document fed into the scanning zone; therefore, the feeding distance between two sheets of document will be reduced, and consequently the whole feeding time for a document will be reduced, too.

    摘要翻译： 一种用于文件馈送器的改进的传输系统，其中恒定的单向旋转齿轮系安装在输出区域中，以便使得输出区域中的传动轴在一个方向上旋转，仅发出一张文件 无论主动齿轮顺时针还是逆时针旋转; 因此，只要第一张原稿从扫描线移出而不移出输出区域，驱动齿轮将顺时针转动其旋转，以便将下一张原稿送入扫描区域; 因此，两纸张之间的进纸距离将减小，因此文件的整个进纸时间也将减少。

    SELECTIVE SILICIDE FORMATION USING RESIST ETCH BACK
    6.
    发明申请
    SELECTIVE SILICIDE FORMATION USING RESIST ETCH BACK 有权
    选择性硅胶形成使用耐蚀蚀回填

    公开(公告)号：US20100099249A1

    公开(公告)日：2010-04-22

    申请号：US12644457

    申请日：2009-12-22

    申请人： Kyunghoon Min ,  Angela Hui ,  Hiroyuki Kinoshita ,  Ning Cheng ,  Mark Chang

    发明人： Kyunghoon Min ,  Angela Hui ,  Hiroyuki Kinoshita ,  Ning Cheng ,  Mark Chang

    IPC分类号： H01L21/285 ,  H01L21/3205

    CPC分类号： H01L27/115 ,  H01L21/28518 ,  H01L21/31144 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11534 ,  H01L27/11568 ,  H01L29/665

    摘要： Methods of selectively forming metal silicides on a memory device are provided. The methods can include forming a mask layer over the memory device; forming a patterned resist over the mask layer; removing upper portions of the patterned resist; forming a patterned mask layer by removing portions of the mask layer that are not covered by the patterned resist; and forming metal silicides on the memory device by a chemical reaction of a metal layer formed on the memory device with portions of the memory device that are not covered by the patterned mask layer. By preventing silicidation of underlying silicon containing layers/components of the memory device that are covered by the patterned mask layer, the methods can selectively form the metal silicides on the desired portions of the memory device.

    摘要翻译： 提供了在存储器件上选择性地形成金属硅化物的方法。 所述方法可以包括在存储器件上形成掩模层; 在掩模层上形成图案化的抗蚀剂; 去除图案化抗蚀剂的上部; 通过去除未被图案化抗蚀剂覆盖的掩模层的部分来形成图案化掩模层; 以及通过形成在存储器件上的金属层与未被图案化掩模层覆盖的存储器件的部分的化学反应在存储器件上形成金属硅化物。 通过防止由图案化掩模层覆盖的存储器件的下层含硅层/部件的硅化，该方法可以选择性地在存储器件的期望部分上形成金属硅化物。

    Selective silicide formation using resist etchback
    7.
    发明授权
    Selective silicide formation using resist etchback 有权
    使用抗蚀剂回蚀的选择性硅化物形成

    公开(公告)号：US07691751B2

    公开(公告)日：2010-04-06

    申请号：US11924823

    申请日：2007-10-26

    申请人： Kyunghoon Min ,  Angela Hui ,  Hiroyuki Kinoshita ,  Ning Cheng ,  Mark Chang

    发明人： Kyunghoon Min ,  Angela Hui ,  Hiroyuki Kinoshita ,  Ning Cheng ,  Mark Chang

    IPC分类号： H01L21/4763

    CPC分类号： H01L27/115 ,  H01L21/28518 ,  H01L21/31144 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11534 ,  H01L27/11568 ,  H01L29/665

    摘要： Methods of selectively forming metal silicides on a memory device are provided. The methods can include forming a mask layer over the memory device; forming a patterned resist over the mask layer; removing upper portions of the patterned resist; forming a patterned mask layer by removing portions of the mask layer that are not covered by the patterned resist; and forming metal silicides on the memory device by a chemical reaction of a metal layer formed on the memory device with portions of the memory device that are not covered by the patterned mask layer. By preventing silicidation of underlying silicon containing layers/components of the memory device that are covered by the patterned mask layer, the methods can selectively form the metal silicides on the desired portions of the memory device.

    摘要翻译： 提供了在存储器件上选择性地形成金属硅化物的方法。 所述方法可以包括在存储器件上形成掩模层; 在掩模层上形成图案化的抗蚀剂; 去除图案化抗蚀剂的上部; 通过去除未被图案化抗蚀剂覆盖的掩模层的部分来形成图案化掩模层; 以及通过形成在存储器件上的金属层与未被图案化掩模层覆盖的存储器件的部分的化学反应在存储器件上形成金属硅化物。 通过防止由图案化掩模层覆盖的存储器件的下层含硅层/部件的硅化，该方法可以选择性地在存储器件的期望部分上形成金属硅化物。

    Integration of an ion implant hard mask structure into a process for fabricating high density memory cells
    9.
    发明授权
    Integration of an ion implant hard mask structure into a process for fabricating high density memory cells 有权
    将离子注入硬掩模结构集成到用于制造高密度存储器单元的工艺中

    公开(公告)号：US06486029B1

    公开(公告)日：2002-11-26

    申请号：US09627563

    申请日：2000-07-28

    申请人： David K. Foote ,  Bharath Rangarajan ,  Stephan K. Park ,  Fei Wang ,  Dawn M. Hopper ,  Jack Thomas ,  Mark Chang ,  Mark Ramsbey

    发明人： David K. Foote ,  Bharath Rangarajan ,  Stephan K. Park ,  Fei Wang ,  Dawn M. Hopper ,  Jack Thomas ,  Mark Chang ,  Mark Ramsbey

    IPC分类号： H01L218247

    CPC分类号： H01L27/11568 ,  H01L27/115 ,  Y10S438/954

    摘要： A process for fabricating a memory cell in a two-bit EEPROM device, the process includes forming an ONO layer overlying a semiconductor substrate, depositing a hard mask overlying the ONO layer, and patterning the hard mask. Preferably, the hard mask includes a material selected from the group consisting of tungsten, titanium, titanium nitride, polysilicon, silicon, silicon nitride, silicon oxi-nitride, and silicon rich nitride. In one preferred embodiment, the process further includes implanting the semiconductor substrate with a p-type dopant at an angle substantially normal to the principal surface of the semiconductor substrate and annealing the semiconductor substrate upon implanting the semiconductor substrate with a p-type dopant. In one preferred embodiment, the process further includes implanting the semiconductor substrate with an n-type dopant.

    摘要翻译： 一种用于在2位EEPROM器件中制造存储单元的工艺，该工艺包括形成覆盖半导体衬底的ONO层，沉积覆盖在ONO层上的硬掩模，以及对该硬掩模进行构图。 优选地，硬掩模包括选自钨，钛，氮化钛，多晶硅，硅，氮化硅，氧化氮化硅和富氮的氮化物的材料。 在一个优选实施例中，该方法还包括以基本上垂直于半导体衬底的主表面的角度注入具有p型掺杂剂的半导体衬底，并在用p型掺杂剂注入半导体衬底时退火半导体衬底。 在一个优选实施例中，该工艺还包括用n型掺杂剂注入半导体衬底。