摘要:
A carbon nano-tube field emission display has a plurality of strip shaped gate, wherein the strip shaped gate of the triode structure is now in place of the conventional hole shaped gate, moreover, pluralities of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which is controlled under the strip shaped gate, and the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.
摘要:
A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
摘要:
An improved FED driving method, which uses a voltage control different from the prior FED, to turn an electron beam on/off and increase the resolution. The improved FED driving method is characterized in increasing a positive voltage applied to the FED's anode, grounding the FED's emitter and applying a negative voltage to the FED's gate. When driving the FED, the anode can pull electron beam out of the cathode with high accelerate voltage and the applied negative voltage on the gate can turn the electron beam on/off. As such, this allows a higher resolution because the electron beam is not influenced by the gate's lateral attraction and high lighting efficiency with high anode accelerate voltage.
摘要:
A method for increasing the number of carbon nanotubes exposed on the triode structure device of a field emission display uses the technology of casting surface treatment. For advancing the current density and magnitude of CNT emitters, the method of casting surface treatment on the CNT emitters includes the steps of coating an adhesive material on the surface of the device; heating the adhesive material for adhibitting the surface; and lifting the adhesive material off the surface.
摘要:
A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
摘要:
A carbon nano-tube field emission display has a plurality of strip shaped gates, wherein the strip shaped gate of the triode structure is in place of the conventional hole shaped gate, and morecover, a plurality of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which are controlled under the strip shaped gate, the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of the triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.
摘要:
A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
摘要:
The present invention provides a method for manufacturing a carbon nanotube field emission display. The method comprises the steps of providing a substrate, screen printing a first conducting layer on the substrate, sintering the first conducting layer, screen printing an isolation layer on the first conducting layer and a second conducting layer on the isolation layer, etching the second conducting layer and the isolation layer, whereby a cavity exposing the first conducting layer is formed, sintering the second conducting layer and the isolation layer, and forming a carbon nanotube layer on the first conducting layer in the cavity.
摘要:
The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要:
The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.