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    Simulation apparatus and method for design of sensor network
    1.
    发明申请
    Simulation apparatus and method for design of sensor network 失效
    传感器网络设计仿真设备及方法

    公开(公告)号：US20070124126A1

    公开(公告)日：2007-05-31

    申请号：US11583246

    申请日：2006-10-18

    申请人： Chung Lee ,  Kyung Kim ,  Sung Shin ,  Hak Kim

    发明人： Chung Lee ,  Kyung Kim ,  Sung Shin ,  Hak Kim

    IPC分类号： G06G7/48

    CPC分类号： G06F17/5009

    摘要： A simulation apparatus and method in relation to a sensor network are provided. The apparatus includes: a space database storing space information; a database storing standard specifications of sensors or sensor nodes; and a modeling unit extracting information on a 3-dimensional (3D) virtual space in which a sensor or sensor node is positioned, from the space database, obtaining the characteristic of the sensor or the sensor node from the standard specification based on the extracted space information and the standard specification of the sensor or the sensor node, and modeling the sensor or the sensor node. According to the apparatus and method, a virtual wireless sensor network system identical to a real world environment can be established, and as a result, the performance of the system can be accurately measured and an optimized design of the system can be efficiently performed.

    摘要翻译： 提供了一种与传感器网络相关的仿真设备和方法。 该装置包括：存储空间信息的空间数据库; 一个存储传感器或传感器节点标准规格的数据库; 以及建模单元，从空间数据库中提取关于传感器或传感器节点的3维（3D）虚拟空间的信息，基于所提取的空间从标准规范获得传感器或传感器节点的特性 信息和传感器或传感器节点的标准规范，以及对传感器或传感器节点进行建模。 根据该装置和方法，可以建立与现实世界环境相同的虚拟无线传感器网络系统，从而可以准确地测量系统的性能，并且可以有效地执行系统的优化设计。

    DUAL SOURCE AUTO-CORRECTION IN DISTRIBUTED TEMPERATURE SYSTEMS
    6.
    发明申请
    DUAL SOURCE AUTO-CORRECTION IN DISTRIBUTED TEMPERATURE SYSTEMS 有权
    分布式温度系统中的双源自动校正

    公开(公告)号：US20100128756A1

    公开(公告)日：2010-05-27

    申请号：US12451865

    申请日：2008-07-07

    申请人： Chung Lee ,  Kwang Suh

    发明人： Chung Lee ,  Kwang Suh

    IPC分类号： G01K11/32

    CPC分类号： G01K11/32 ,  G01K15/00 ,  G01K15/005 ,  G01K2011/324

    摘要： An automatic and continuous method is presented to improve the accuracy of fiber optic distributed temperature measurements derived from Raman back scatterings utilizing two light sources with different wavelengths, by choosing the wavelengths of the two sources so the primary source's return anti-Stokes component overlaps with the incident wavelength of the secondary light source thereby canceling out the non-identical attenuations generated by the wavelength differences between Stokes and anti-Stokes bands.

    摘要翻译： 提出了一种自动和连续的方法，通过选择两个光源的波长来提高从使用两个不同波长的光源的拉曼后向散射得到的光纤分布温度测量的精度，使得主光源的反斯托克斯分量与 从而消除由斯托克斯和反斯托克斯波段之间的波长差产生的不相同的衰减。

    Hybrid dielectric film
    7.
    发明申请
    Hybrid dielectric film 有权
    混合电介质膜

    公开(公告)号：US20060051972A1

    公开(公告)日：2006-03-09

    申请号：US10936156

    申请日：2004-09-07

    申请人： Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung Lee

    发明人： Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung Lee

    IPC分类号： H01L21/469 ,  C23C16/00

    CPC分类号： H01L21/02271 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/312 ,  H01L21/316 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835 ,  Y10T29/41

    摘要： A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.

    摘要翻译： 提供了一种在用于集成电路的衬底上形成杂化无机/有机电介质层的方法，其中所述方法包括通过化学气相沉积在衬底上形成第一电介质层，并在第一电介质上形成第二电介质层 层，其中所述第一介电层和所述第二介电层中的一个由有机介电材料形成，并且其中所述第一介电层和所述第二介电层中的另一个由无机介电材料形成。

    Embossing stylus
    8.
    发明申请
    Embossing stylus 审中-公开

    公开(公告)号：US20050279231A1

    公开(公告)日：2005-12-22

    申请号：US10913286

    申请日：2004-08-05

    申请人： Chung Lee

    发明人： Chung Lee

    IPC分类号： B31F1/07 ,  B44B5/00

    CPC分类号： B44B5/0085 ,  B31F1/07

    摘要： The present invention is for an embossing stylus for embossing a design. The stylus has a central body portion, a removable embossing tip, having at least one embossing point and a spring biasing mechanism. The spring biasing mechanism is disposed on one end of the central body portion, and is configured to contact the removable embossing tip, biasing the embossing point in an outward direction away from the central body portion, such that the embossing point can be used to emboss the desired design.

    Single and dual damascene techniques utilizing composite polymer dielectric film
    10.
    发明申请
    Single and dual damascene techniques utilizing composite polymer dielectric film 有权
    使用复合聚合物电介质膜的单和双镶嵌技术

    公开(公告)号：US20050221606A1

    公开(公告)日：2005-10-06

    申请号：US10815994

    申请日：2004-03-31

    申请人： Chung Lee ,  Atul Kumar

    发明人： Chung Lee ,  Atul Kumar

    IPC分类号： B05D5/12 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/76825 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

    摘要： A method of forming an electrically conductive element in an integrated circuit is disclosed. The method includes depositing a composite polymer dielectric film onto a silicon-containing substrate, wherein the composite polymer dielectric film includes a silane-containing adhesion promoter layer formed on the silicon-containing substrate, and a low dielectric constant polymer layer formed on the adhesion promoter layer, depositing a silane-containing hard mask layer onto the composite polymer dielectric film, exposing the adhesion promoter layer and the hard mask layer to a free radical-generating energy source to chemically bond the adhesion promoter layer to the underlying silicon-containing substrate and to the low dielectric constant polymer layer, and to chemically bond the composite polymer dielectric film to the hard mask layer, etching an etched feature in the hard mask layer and the composite polymer dielectric film, and depositing an electrically conductive material in the etched feature.

    摘要翻译： 公开了一种在集成电路中形成导电元件的方法。 该方法包括将复合聚合物电介质膜沉积到含硅衬底上，其中复合聚合物电介质膜包括在含硅衬底上形成的含硅烷的粘合促进剂层，以及形成在粘合促进剂上的低介电常数聚合物层 将含硅烷的硬掩模层沉积到复合聚合物电介质膜上，将粘附促进剂层和硬掩模层暴露于自由基产生能量源以将粘附促进剂层化学键合到下面的含硅基材上;以及 到低介电常数聚合物层，并且将复合聚合物电介质膜化学键合到硬掩模层，蚀刻硬掩模层和复合聚合物电介质膜中的蚀刻特征，以及在蚀刻特征中沉积导电材料。