公开(公告)号：US20060051972A1

公开(公告)日：2006-03-09

申请号：US10936156

申请日：2004-09-07

Applicant: Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung Lee

Inventor： Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung Lee

IPC: H01L21/469 ,  C23C16/00

CPC classification number: H01L21/02271 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/312 ,  H01L21/316 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835 ,  Y10T29/41

Abstract: A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.

Abstract translation: 提供了一种在用于集成电路的衬底上形成杂化无机/有机电介质层的方法，其中所述方法包括通过化学气相沉积在衬底上形成第一电介质层，并在第一电介质上形成第二电介质层 层，其中所述第一介电层和所述第二介电层中的一个由有机介电材料形成，并且其中所述第一介电层和所述第二介电层中的另一个由无机介电材料形成。

公开(公告)号：US20050221606A1

公开(公告)日：2005-10-06

申请号：US10815994

申请日：2004-03-31

Applicant: Chung Lee ,  Atul Kumar

Inventor： Chung Lee ,  Atul Kumar

IPC: B05D5/12 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76825 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

Abstract: A method of forming an electrically conductive element in an integrated circuit is disclosed. The method includes depositing a composite polymer dielectric film onto a silicon-containing substrate, wherein the composite polymer dielectric film includes a silane-containing adhesion promoter layer formed on the silicon-containing substrate, and a low dielectric constant polymer layer formed on the adhesion promoter layer, depositing a silane-containing hard mask layer onto the composite polymer dielectric film, exposing the adhesion promoter layer and the hard mask layer to a free radical-generating energy source to chemically bond the adhesion promoter layer to the underlying silicon-containing substrate and to the low dielectric constant polymer layer, and to chemically bond the composite polymer dielectric film to the hard mask layer, etching an etched feature in the hard mask layer and the composite polymer dielectric film, and depositing an electrically conductive material in the etched feature.

Abstract translation: 公开了一种在集成电路中形成导电元件的方法。 该方法包括将复合聚合物电介质膜沉积到含硅衬底上，其中复合聚合物电介质膜包括在含硅衬底上形成的含硅烷的粘合促进剂层，以及形成在粘合促进剂上的低介电常数聚合物层 将含硅烷的硬掩模层沉积到复合聚合物电介质膜上，将粘附促进剂层和硬掩模层暴露于自由基产生能量源以将粘附促进剂层化学键合到下面的含硅基材上;以及 到低介电常数聚合物层，并且将复合聚合物电介质膜化学键合到硬掩模层，蚀刻硬掩模层和复合聚合物电介质膜中的蚀刻特征，以及在蚀刻特征中沉积导电材料。

公开(公告)号：US20050158454A1

公开(公告)日：2005-07-21

申请号：US11071668

申请日：2005-03-02

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  B05D5/06

CPC classification number: B29C71/02 ,  B05D1/60 ,  B05D3/0254 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/3127

Abstract: A method of forming an organic light-emitting display on a substrate is disclosed, wherein the method includes forming a thin film transistor portion of the device on the substrate, wherein the thin film transistor portion includes control circuitry having an array of thin film transistors; and forming a light-emitting portion of the device over the thin film transistor portion, wherein the light-emitting portion includes an organic light-emitting layer, an electrode layer in electrical communication with the organic light-emitting layer, a polymer barrier layer disposed between the organic light-emitting layer and the electrode, and at least one other passive polymer layer, wherein the barrier layer and at least one other passive polymer layer are formed from a same polymer material.

Abstract translation: 公开了一种在衬底上形成有机发光显示器的方法，其中该方法包括在衬底上形成器件的薄膜晶体管部分，其中薄膜晶体管部分包括具有薄膜晶体管阵列的控制电路; 以及在所述薄膜晶体管部分上形成所述器件的发光部分，其中所述发光部分包括有机发光层，与所述有机发光层电连通的电极层，设置有聚合物阻挡层 在有机发光层和电极之间以及至少一个其它被动聚合物层，其中阻挡层和至少一个其它被动聚合物层由相同的聚合物材料形成。

公开(公告)号：US20050000435A1

公开(公告)日：2005-01-06

申请号：US10900878

申请日：2004-07-27

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen

IPC: B01J19/12 ,  B01J19/18 ,  B05D1/00 ,  B05D3/02 ,  B05D3/06 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/00 ,  H01L21/312 ,  H01L21/768 ,  H01L23/532 ,  C23C16/00

CPC classification number: H01L23/5329 ,  B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02263 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: A reactor for forming a reactive intermediate from a precursor for the deposition of a low dielectric constant polymer film via transport polymerization is disclosed. The reactor includes an inlet for admitting a flow of the precursor into the reactor, an interior for converting the precursor to the reactive intermediate, an outlet for admitting a flow of the reactive intermediate out of the interior, and at least one of an energy source and an oxidant source associated with the outlet for decomposing residues in the outlet.

Abstract translation: 公开了一种用于通过传输聚合沉积低介电常数聚合物膜的前体形成反应性中间体的反应器。 反应器包括用于将前体流入入反应器的入口，用于将前体转化为反应性中间体的内部，用于允许反应性中间体流出内部的出口和至少一个能量源 以及与出口相关联的用于分解出口中残留物的氧化剂源。

公开(公告)号：US20070216300A1

公开(公告)日：2007-09-20

申请号：US11800938

申请日：2007-05-07

Applicant: Chung Lee ,  Chieh Chen ,  Atul Kumar

Inventor： Chung Lee ,  Chieh Chen ,  Atul Kumar

IPC: H01J1/62 ,  B05D5/00

CPC classification number: C08G61/025 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/3127 ,  H01L51/448 ,  Y02E10/549

Abstract: An organic opto-electronic device is disclosed. One embodiment comprises a substrate, one or more organic device layers disposed over the substrate, and a multi-layer barrier disposed over the one or more organic device layers, the multi-layer barrier comprising a parylene-based layer and a layer comprising an ultraviolet protectant material.

Abstract translation: 公开了一种有机光电器件。 一个实施例包括衬底，设置在衬底上的一个或多个有机器件层，以及设置在一个或多个有机器件层上的多层势垒层，所述多层势垒包括聚对二甲苯基层和包含紫外线的层 保护材料。

公开(公告)号：US20070105473A1

公开(公告)日：2007-05-10

申请号：US11271410

申请日：2005-11-09

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen

IPC: H05B33/10 ,  H01L51/56

CPC classification number: H01L51/5256 ,  Y10T428/1082 ,  Y10T428/2852

Abstract: A method of encapsulating an organic light-emitting device is disclosed, wherein the device includes a light-emitting portion and an electrical contact portion, the method including forming a polymer layer over the light-emitting portion and the electrical contact portion of the device; forming a separation in the polymer layer between a portion of the polymer layer disposed over the light-emitting portion of the device and a portion of the polymer layer disposed over the electrical contact portion of the device; adhering a film removal structure to the portion of the polymer layer disposed over the electrical contact portion of the device; and removing the film removal structure, thereby causing the removal of the portion of the polymer layer disposed over the electrical contact portion of the device.

Abstract translation: 公开了一种封装有机发光器件的方法，其中该器件包括发光部分和电接触部分，该方法包括在器件的发光部分和电接触部分上形成聚合物层; 在所述聚合物层的设置在所述器件的发光部分之上的部分和设置在所述器件的电接触部分之上的聚合物层的一部分之间的聚合物层中形成分离; 将膜去除结构粘附到设置在所述器件的电接触部分上方的聚合物层的部分; 并去除膜去除结构，从而导致去除设置在器件的电接触部分上的聚合物层的部分。

公开(公告)号：US20060046044A1

公开(公告)日：2006-03-02

申请号：US10925701

申请日：2004-08-24

Applicant: Chung Lee ,  Atul Kumar

Inventor： Chung Lee ,  Atul Kumar

IPC: B29C65/00 ,  B32B3/26

CPC classification number: H01L21/7682 ,  B29C55/16 ,  B32B2038/0048 ,  B32B2305/026 ,  B32B2307/204 ,  B32B2457/08 ,  C08J7/04 ,  C08J7/042 ,  C08J2427/12 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3143 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  Y10T428/249953 ,  Y10T428/31504

Abstract: A method of forming a composite dielectric polymer thin film on a substrate is disclosed, wherein the method includes forming a first substantially continuous layer of a dielectric polymer material on the substrate, forming a porous layer of the dielectric polymer material on the first, substantially continuous layer, and forming a second substantially continuous layer of the dielectric polymer material on the porous layer.

Abstract translation: 公开了一种在基板上形成复合介电聚合物薄膜的方法，其中所述方法包括在基板上形成介电聚合物材料的第一基本连续的层，在第一基本上连续的 并且在所述多孔层上形成所述电介质聚合物材料的第二基本上连续的层。

公开(公告)号：US20050221626A1

公开(公告)日：2005-10-06

申请号：US11020422

申请日：2004-12-21

Applicant: Chung Lee ,  Atul Kumar

Inventor： Chung Lee ,  Atul Kumar

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  H01L21/469 ,  H01L21/31

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

Abstract translation: 公开了一种在通过传输聚合形成电介质薄膜之后稳定聚（对二甲苯）电介质薄膜的方法，其中该方法包括在至少一种还原性气氛和真空中在高于可逆的温度下退火介电薄膜 电介质膜的固相转变温度，以将膜从较低温度相转变为较高温度相，并将电介质薄膜以足够的速率冷却至低于介电薄膜的固相转变温度的温度，以捕获相当大的 在较高温度阶段的薄膜部分。

公开(公告)号：US20050218481A1

公开(公告)日：2005-10-06

申请号：US10816205

申请日：2004-03-31

Applicant: Chung Lee ,  Atul Kumar

Inventor： Chung Lee ,  Atul Kumar

IPC: H01L21/4763 ,  H01L23/58

CPC classification number: H01L21/3122 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02263 ,  H01L21/02348 ,  H01L21/3127

Abstract: An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

Abstract translation: 公开了一种集成电路，其包括在基板上形成的复合聚合物电介质层，其中所述复合聚合物电介质层包括在所述基板上形成的第一含硅烷层，其中所述第一含硅烷层至少部分地由有机硅烷材料形成 ，形成在第一含硅烷层上的聚合物电介质层和形成在聚合物电介质层上的第二含硅烷层。 在一些实施方案中，第一含硅烷层和第二含硅烷层可以由具有至少一个能够进行自由基聚合的不饱和键的有机硅烷材料形成。 还提供了用于制造所公开的集成电路的系统和方法。

公开(公告)号：US20050174045A1

公开(公告)日：2005-08-11

申请号：US11071764

申请日：2005-03-02

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  H01J1/62

CPC classification number: B29C71/02 ,  B05D1/60 ,  B05D3/0254 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/3127

Abstract: An organic light-emitting display is disclosed, wherein the organic light-emitting display includes a thin film transistor portion including an array of thin film transistors, and a light-emitting portion including an array of organic light-emitting elements in electrical communication with the array of thin film transistors, wherein the light-emitting portion is formed from a plurality of layers of materials, and wherein the plurality of layers of materials in the light-emitting portion includes a plurality of passive polymer layers each formed from a single polymer material. Systems and methods for forming organic light-emitting displays are also disclosed.

Abstract translation: 公开了一种有机发光显示器，其中所述有机发光显示器包括薄膜晶体管部分，所述薄膜晶体管部分包括薄膜晶体管阵列，以及发光部分，包括与所述有机发光元件电连通的有机发光元件阵列 薄膜晶体管阵列，其中所述发光部分由多层材料形成，并且其中所述发光部分中的所述多个材料层包括多个被动聚合物层，每个被动聚合物层由单一聚合物材料形成 。 还公开了用于形成有机发光显示器的系统和方法。