公开(公告)号：US08906163B2

公开(公告)日：2014-12-09

申请号：US12962486

申请日：2010-12-07

申请人： Chung-Ho Huang ,  Cheng-Chieh Lin

发明人： Chung-Ho Huang ,  Cheng-Chieh Lin

IPC分类号： B08B6/00

CPC分类号： B08B6/00 ,  G05B19/4184 ,  G05B19/41865 ,  G05B2219/32226 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/20

摘要： A method of operating one or more back end circuits of a plasma processing system, comprising: prior to a front end module receiving one or more wafers to be processed, receiving preliminary data at a back end circuit, wherein the preliminary data indicates a recipe and a predetermined number, the predetermined number indicating a number of wafers to be processed; determining whether a plasma processing chamber is ready for processing; and if the chamber is ready for processing and via the back end circuit, selecting a load lock, based on the predetermined number, instructing the front end module to pull the one or more wafers into the load lock, enabling the chamber to process a first wafer of the one or more wafers according to the recipe, and subsequent to the processing of the first wafer, instructing the front end module to remove the first wafer from the chamber.

摘要翻译： 一种操作等离子体处理系统的一个或多个后端电路的方法，包括：在前端模块接收待处理的一个或多个晶片之前，在后端电路处接收初始数据，其中所述初步数据指示配方，并且 预定数量，表示要处理的晶片数量的预定数量; 确定等离子体处理室是否准备好进行处理; 并且如果所述腔室准备好进行处理并且经由后端电路，则基于预定数量选择负载锁定，指示前端模块将一个或多个晶片拉入负载锁定，使得腔室能够处理第一 根据配方，在第一晶片的处理之后，指示前端模块从腔室中移除第一晶片，从而使一个或多个晶圆的晶圆。

公开(公告)号：US20120138085A1

公开(公告)日：2012-06-07

申请号：US12962486

申请日：2010-12-07

申请人： Chung-Ho Huang ,  Cheng-Chieh Lin

发明人： Chung-Ho Huang ,  Cheng-Chieh Lin

IPC分类号： B08B6/00

CPC分类号： B08B6/00 ,  G05B19/4184 ,  G05B19/41865 ,  G05B2219/32226 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/20

摘要： Methods and apparatus for controlling a plasma processing system in a purely pull mode or a hybrid pull mode. In the purely pull mode, the back end assumes master control at least for requesting and scheduling loading of production wafers. In the hybrid pull mode, the back end assumes master control at least for tool maintenance/cleaning while the front end retains master control for production wafers.

摘要翻译： 用于以纯拉模式或混合拉模式控制等离子体处理系统的方法和装置。 在纯拉模式下，后端至少要求主控制，用于请求和调度生产晶片的加载。 在混合拉动模式中，后端至少为了进行工具维护/清洁而进行主控制，而前端保留用于生产晶片的主控制。

公开(公告)号：US07899627B2

公开(公告)日：2011-03-01

申请号：US11536577

申请日：2006-09-28

申请人： Chung-Ho Huang ,  Jackie Seto ,  Nicolas Bright

发明人： Chung-Ho Huang ,  Jackie Seto ,  Nicolas Bright

IPC分类号： G06F19/00 ,  H01L21/00

CPC分类号： H01J37/3299 ,  H01J37/32935

摘要： In a plasma processing system, a method for dynamically establishing a baseline is provided. The method includes processing a first substrate. The method also includes collecting a first signal data for the first substrate. The method further includes comparing the first signal data against the baseline. The method moreover includes including the first signal data in a recalculation of the baseline if the first signal data is within a confidence level range, which is in between a top level above the baseline and a bottom level below the baseline.

摘要翻译： 在等离子体处理系统中，提供了用于动态建立基线的方法。 该方法包括处理第一衬底。 该方法还包括收集第一基底的第一信号数据。 该方法还包括将第一信号数据与基线进行比较。 该方法还包括如果第一信号数据在置信水平范围内的第一信号数据重新计算基线，其置于高于基线的最高水平和低于基线的底部水平之间。

公开(公告)号：US20100325084A1

公开(公告)日：2010-12-23

申请号：US12869016

申请日：2010-08-26

申请人： Chung-Ho Huang ,  Hae-Pyng Jea ,  Tung Hsu ,  Jackie Seto

发明人： Chung-Ho Huang ,  Hae-Pyng Jea ,  Tung Hsu ,  Jackie Seto

IPC分类号： G06F17/00 ,  G06F17/30

CPC分类号： G05B19/418 ,  Y02P90/02 ,  Y02P90/205 ,  Y02P90/86 ,  Y10S707/99943 ,  Y10S707/99945

摘要： A system for facilitating plasma processing tool component management across plurality of tools is provided. The system includes means for receiving first component data for first plurality of components, including identification and usage history for a first plurality of components, at first database associated with first tool. The system also includes means for receiving second component data for second plurality of components at second database associated with second tool, which is different from first tool. The system further includes means for synchronizing first and second component data with third database. The synchronizing includes synchronizing between third database and at least one of first and second database rules that govern usage of at least one component of first and second plurality of components. The third database is coupled to exchange data with plurality of tools. The system yet also includes means for obtaining information, using rules and usage history data about given component prior to performing one of replacement, analysis, and maintenance.

摘要翻译： 提供了一种用于促进跨多个工具的等离子体处理工具部件管理的系统。 该系统包括用于在与第一工具相关联的第一数据库处接收用于第一多个组件的第一组件数据的装置，包括用于第一多个组件的标识和使用历史。 该系统还包括用于在与第二工具相关联的第二数据库处接收与第一工具不同的第二数据组件的第二组件数据的装置。 该系统还包括用于将第一和第二组件数据与第三数据库同步的装置。 同步包括在第三数据库与管理第一和第二多个组件的至少一个组件的使用的第一和第二数据库规则中的至少一个之间进行同步。 第三数据库被耦合以与多个工具交换数据。 该系统还包括在执行替换，分析和维护之前获得信息，使用关于给定组件的规则和使用历史数据的装置。

公开(公告)号：US07814046B2

公开(公告)日：2010-10-12

申请号：US11537517

申请日：2006-09-29

申请人： Chung-Ho Huang ,  Hae-Pyng Jea ,  Tung Hsu ,  Jackie Seto

发明人： Chung-Ho Huang ,  Hae-Pyng Jea ,  Tung Hsu ,  Jackie Seto

IPC分类号： G06F17/00

CPC分类号： G05B19/418 ,  Y02P90/02 ,  Y02P90/205 ,  Y02P90/86 ,  Y10S707/99943 ,  Y10S707/99945

摘要： A computer-implemented method for facilitating plasma processing tool component management across plurality of tools is provided. The method includes receiving first component data for first plurality of components, including identification and usage history, at first database associated with first tool. The method also includes receiving second component data for second plurality of components at second database associated with second tool, which is different from first tool. The method further includes synchronizing first and second component data with third database. The synchronizing includes synchronizing between third database and at least one of first and second database rules that govern usage of at least one component of first and second plurality of components. The third database is coupled to exchange data with plurality of tools. The method yet also includes obtaining information, using rules and usage history data about given component prior to performing one of replacement, analysis, and maintenance.

摘要翻译： 提供了一种用于促进跨多个工具的等离子体处理工具部件管理的计算机实现的方法。 该方法包括在与第一工具相关联的第一数据库处接收包括标识和使用历史的第一多个组件的第一组件数据。 该方法还包括在与第二工具相关联的第二数据库处接收与第一工具不同的第二多个组件的第二组件数据。 该方法还包括将第一和第二组件数据与第三数据库同步。 同步包括在第三数据库与管理第一和第二多个组件的至少一个组件的使用的第一和第二数据库规则中的至少一个之间进行同步。 第三数据库被耦合以与多个工具交换数据。 该方法还包括在执行替换，分析和维护之前获得信息，使用关于给定组件的规则和使用历史数据。

公开(公告)号：US06855567B1

公开(公告)日：2005-02-15

申请号：US09586530

申请日：2000-05-31

申请人： Tuqiang Ni ,  Andrew Lui ,  Chung-Ho Huang ,  Weinan Jiang

发明人： Tuqiang Ni ,  Andrew Lui ,  Chung-Ho Huang ,  Weinan Jiang

IPC分类号： H01J37/32 ,  H01L21/28 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L21/28035 ,  H01L21/31122

摘要： A method for determining an endpoint for etching a layer includes steps of estimating the etch endpoint and, during etch, directing radiant energy at two or more wavelengths onto the layer to be etched, detecting the last intensity maximum reflected at a first wavelength prior to the estimated etch endpoint, and detecting the intensity maximum reflected at a second wavelength first occurring after the last intensity maximum at the first wavelength. Also, a method for determining an endpoint for etching a layer having an approximate initial thickness by steps of, during etch, directing radiant energy at three or more wavelengths onto the layer to be etched; selecting first, second, and third wavelengths; approximating an etch rate from the time interval between a first detected intensity minimum and an adjacent intensity maximum reflected at the third wavelength, estimating an etch endpoint from the approximate initial thickness of the layer and the approximate etch rate; detecting the last intensity maximum reflected at the first wavelength prior to the estimated etch endpoint; and detecting the intensity maximum reflected at the second wavelength first occurring after the last intensity maximum at the first wavelength. The material making up the layer is at least partly transparent to both the first and the second wavelength. The first wavelength is longer than both the second wavelength and the third wavelength. In some embodiments the third wavelength is longer than the second wavelength. The endpoint is at the point of intensity maximum of the second wavelength or is at a point following an interval thereafter.

摘要翻译： 用于确定用于蚀刻层的端点的方法包括以下步骤：估计蚀刻端点，并且在蚀刻期间将两个或更多波长的辐射能引导到待蚀刻的层上，检测在第一波长之前反射的最后强度最大值 并且检测在第一波长的最后强度最大值之后首先出现的第二波长反射的强度最大值。 而且，一种用于确定用于蚀刻具有近似初始厚度的层的端点的方法，该蚀刻步骤在蚀刻期间将三个或更多个波长的辐射能引导到待蚀刻的层上; 选择第一，第二和第三波长; 从第一检测强度最小值和在第三波长反射的相邻强度最大值之间的时间间隔近似蚀刻速率，从该层的近似初始厚度估计蚀刻终点和近似蚀刻速率; 在估计的蚀刻端点之前检测在第一波长处反射的最后强度最大值; 并且检测在第一波长的最后强度最大值之后首先出现的第二波长反射的强度最大值。 构成该层的材料对于第一和第二波长至少部分透明。 第一波长比第二波长和第三波长长。 在一些实施例中，第三波长比第二波长长。 端点处于第二波长的强度最大点处，或者在其后的间隔处。

公开(公告)号：US06526355B1

公开(公告)日：2003-02-25

申请号：US09539312

申请日：2000-03-30

申请人： Tuqiang Ni ,  Tuan Ngo ,  Chung-Ho Huang ,  Andrew Lui ,  Farro Kaveh

发明人： Tuqiang Ni ,  Tuan Ngo ,  Chung-Ho Huang ,  Andrew Lui ,  Farro Kaveh

IPC分类号： G06F1900

CPC分类号： H01J37/32935 ,  G01N23/20 ,  H01J37/32972

摘要： A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.

摘要翻译： 具有控制处理室的计算机系统的处理室连接到一个或多个光谱仪。 光谱仪可以是干涉仪的一部分，也可以是光发射光谱仪。 光谱仪可以是2,048个元件的CCD或光电二极管阵列。 输入板构成计算机系统的一部分，并直接连接到光谱仪。 输入板将数据从光谱仪提供给双端口存储器，可直接访问计算机系统的CPU。 在输入板上使用状态机和加法器允许将数据从光谱仪计算和放置到双端口存储器，以便CPU不需要这样的放置。

公开(公告)号：US20110253673A1

公开(公告)日：2011-10-20

申请号：US13172917

申请日：2011-06-30

申请人： Tuqiang NI ,  Frank Y. Lin ,  Chung-Ho Huang ,  Weinan Jiang

发明人： Tuqiang NI ,  Frank Y. Lin ,  Chung-Ho Huang ,  Weinan Jiang

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/3299

摘要： The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

摘要翻译： 响应于存储在计算机存储器中的信号，提供给真空等离子体处理室中的等离子体的RF功率的量在预编程的基础上逐渐改变。 计算机存储器存储信号，使得其他处理室参数（压力，气体种类和气体流速）在发生逐渐变化时保持恒定。 存储的信号使得能够蚀刻圆形拐角而不是锋利的边缘，例如在沟槽壁和基部的交叉处。

公开(公告)号：US08000827B2

公开(公告)日：2011-08-16

申请号：US12711163

申请日：2010-02-23

申请人： Chad R. Weetman ,  Chung-Ho Huang ,  Jacqueline Seto ,  John Jensen

发明人： Chad R. Weetman ,  Chung-Ho Huang ,  Jacqueline Seto ,  John Jensen

IPC分类号： G06F19/00

CPC分类号： G05B19/4183 ,  G05B2219/31304 ,  G05B2219/35391 ,  G05B2219/45031 ,  Y02P90/10 ,  Y02P90/20

摘要： A plasma-processing tool for processing a substrate using at least a first process recipe and a second process recipe is provided. The plasma-processing tool includes transducers configured to collect process data streams, each process data stream pertaining to a process parameter being monitored during recipe execution. The tool also includes a logic circuitry configured for receiving a set of meta-data wherein each meta-data includes identification data about the substrate and the process recipe being executed. The logic circuitry is also configured for receiving a set of process data streams, each of which being associated with a specific process recipe. The logic circuitry further includes storing the meta-data and the process data streams associated with the first process recipe as a first file and the meta-data and the process data streams associated with the second process recipe as a second file.

摘要翻译： 提供了一种用于使用至少第一处理配方和第二处理配方来处理衬底的等离子体处理工具。 等离子体处理工具包括被配置为收集过程数据流的换能器，与在配方执行期间被监控的过程参数相关的每个过程数据流。 该工具还包括配置用于接收一组元数据的逻辑电路，其中每个元数据包括关于衬底的识别数据和正在执行的工艺配方。 逻辑电路还被配置为用于接收一组过程数据流，每个过程数据流与特定的处理配方相关联。 逻辑电路还包括将与第一处理配方相关联的元数据和过程数据流存储为第一文件，将与第二处理配方关联的元数据和过程数据流存储为第二文件。

公开(公告)号：US07882076B2

公开(公告)日：2011-02-01

申请号：US11610687

申请日：2006-12-14

申请人： Chad R. Weetman ,  Chung-Ho Huang

发明人： Chad R. Weetman ,  Chung-Ho Huang

IPC分类号： G06F7/00 ,  G06F17/00 ,  G06F12/00 ,  G06F17/30 ,  G06F15/173

CPC分类号： G06F17/30067

摘要： An arrangement for performing at least one of collecting and analyzing data from a tool cluster configured to process a set of substrates is provided. The arrangement includes a plurality of tools from which at least one tool of the plurality of tools has a chamber for processing at least one of the set of substrates. The arrangement also includes a plurality of secondary servers configured to collect sensor data from the plurality of tools. The arrangement further includes a primary server communicably coupled with the plurality of secondary servers and configured to execute a database management system. The sensor data is indexed using a plurality of indexing applications on the plurality of secondary servers prior to being forwarded to the primary server for use by the database management system. Indexing includes associating a sensor data item with an identity of a server where the sensor data item is stored.

摘要翻译： 提供了一种用于执行从被配置为处理一组基板的工具集群收集和分析数据中的至少一个的布置。 该装置包括多个工具，多个工具中的至少一个工具具有用于处理该组衬底中的至少一个的腔室的多个工具。 该装置还包括被配置为从多个工具收集传感器数据的多个辅助服务器。 该装置还包括与多个辅助服务器可通信地耦合并被配置为执行数据库管理系统的主服务器。 传感器数据在被转发到主服务器以供数据库管理系统使用之前，使用多个辅助服务器上的多个索引应用进行索引。 索引包括将传感器数据项与存储传感器数据项的服务器的标识相关联。