Light-altering material arrangements for light-emitting devices

    公开(公告)号:US11688832B2

    公开(公告)日:2023-06-27

    申请号:US16850540

    申请日:2020-04-16

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/502 H01L25/0753 H01L33/56 H01L33/60

    Abstract: Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip.

    LIGHT-ALTERING MATERIAL ARRANGEMENTS FOR LIGHT-EMITTING DEVICES

    公开(公告)号:US20210328112A1

    公开(公告)日:2021-10-21

    申请号:US16850540

    申请日:2020-04-16

    Applicant: CreeLED, Inc.

    Abstract: Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip.

    SIDEWALL ARRANGEMENTS FOR LIGHT-EMITTING DIODE DEVICES AND RELATED METHODS

    公开(公告)号:US20240234642A1

    公开(公告)日:2024-07-11

    申请号:US18093373

    申请日:2023-01-05

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/46 H01L33/58 H01L25/0753

    Abstract: Solid-state lighting devices, and more particularly sidewall arrangements for light-emitting devices such as light-emitting diodes (LEDs) are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The side layer around the peripheral sidewall of the LED chip can include an inner layer and an outer layer, each with different light altering properties. For example, the inner layer can be reflective so as to improve the light output and/or efficiency of the LED chip, while the outer layer can be absorptive so as to avoid interaction and/or crosstalk with neighboring LED chips. By having a reflective inner layer, and an absorptive outer layer, light output, sharpness, and contrast can be improved.

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