LIGHT-EMITTING DIODE PACKAGES WITH MATERIALS FOR REDUCING EFFECTS OF ENVIRONMENTAL INGRESS

    公开(公告)号:US20240355979A1

    公开(公告)日:2024-10-24

    申请号:US18304836

    申请日:2023-04-21

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/62 H01L33/56

    Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages with materials for reducing effects of environmental ingress are disclosed. Reactive materials are provided within LED packages that preferentially absorb environmental ingress away from other package elements, thereby extending operating lifetimes. Such reactive materials may be configured with redox potentials that are lower than the other package elements to more readily attract and react with environmental ingress that may enter LED packages under various operating environments. Arrangements of reactive materials are described relative to LED chips and corresponding electrical connections. Reactive materials may be formed as coatings, layers, pre-formed structures, and/or distributions of particles within LED packages.

    LASER ETCHING FOR LIGHT-EMITTING DIODE DEVICES AND RELATED METHODS

    公开(公告)号:US20240266462A1

    公开(公告)日:2024-08-08

    申请号:US18104966

    申请日:2023-02-02

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/007 H01L33/0093 H01L2933/0058

    Abstract: Solid-state lighting devices, and more particularly to laser etching light-emitting diode (LED) devices and related methods are disclosed. LED devices that use sapphire substrates are difficult to etch using conventional techniques, but laser etching and ablation of sapphire substrates overcomes these challenges. Laser etching a surface of the sapphire substrate can form light-extraction features that include structures formed in or on light-emitting surfaces of substrates. Light-extraction features may include repeating patterns of features with dimensions that, along with reduced substrate thicknesses, provide targeted emission profiles for flip-chip structures, such as Lambertian emission profiles. In some embodiments, laser ablation of the sapphire substrate can also be used to form trenches between active layer portions of an LED matrix to form pixels that reduce interference between the active layer portions. The trenches can further be filled with materials with light-altering properties to further refine the desired emission characteristics.

    Light-emitting diode package
    3.
    外观设计

    公开(公告)号:USD1036711S1

    公开(公告)日:2024-07-23

    申请号:US29877887

    申请日:2023-06-13

    Applicant: CreeLED, Inc.

    Abstract: FIG. 1 is a top perspective view of one embodiment of a light-emitting diode package;
    FIG. 2 is a bottom perspective view of the light-emitting diode package of FIG. 1;
    FIG. 3 is a top view of the light-emitting diode package of FIG. 1;
    FIG. 4 is a bottom view of the light-emitting diode package of FIG. 1;
    FIG. 5 is an end view of the light-emitting diode package of FIG. 1;
    FIG. 6 is an opposing end view of the light-emitting diode package of FIG. 1;
    FIG. 7 is a side view of the light-emitting diode package of FIG. 1;
    FIG. 8 is an opposing side view of the light-emitting diode package of FIG. 1;
    FIG. 9 is a top perspective view of another embodiment of a light-emitting diode package;
    FIG. 10 is a bottom perspective view of the light-emitting diode package of FIG. 9;
    FIG. 11 is a top view of the light-emitting diode package of FIG. 9;
    FIG. 12 is a bottom view of the light-emitting diode package of FIG. 9;
    FIG. 13 is an end view of the light-emitting diode package of FIG. 9;
    FIG. 14 is an opposing end view of the light-emitting diode package of FIG. 9;
    FIG. 15 is a side view of the light-emitting diode package of FIG. 9; and,
    FIG. 16 is an opposing side view of the light-emitting diode package of FIG. 9.
    The dashed broken lines shown in the drawings depict portions of the light-emitting diode package that form no part of the claimed design.
    The dot-dashed broken lines shown in the drawings depict portions of the light-emitting diode package that represent boundaries of the claimed design and are not part of the claimed design.

    LIGHT-EMITTING DIODE CHIP STRUCTURES WITH ELECTRICALLY INSULATING SUBSTRATES AND RELATED METHODS

    公开(公告)号:US20230361249A1

    公开(公告)日:2023-11-09

    申请号:US18308323

    申请日:2023-04-27

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/385 H01L33/20

    Abstract: Light-emitting diode (LED) chips and, more particularly, structures of LED chips with electrically insulating substrates and related methods are disclosed. LED chips include at least one opening that extends through a substrate to provide an electrical pathway to an active LED structure. Another electrical connection may be provided on the active LED structure in a position that forms a vertical contact arrangement. The at least one opening may extend through the substrate and into a portion of the active LED structure to provide increased surface area for the electrical connection. Additional LED chip structures include another opening on the active LED structure that is registered with the opening in the substrate, and electrical connections to a same layer of the active LED structure may be provided within each opening. Related methods include laser drilling the at least one opening in the substrate.

    Light-emitting diodes, light-emitting diode arrays and related devices

    公开(公告)号:US11335833B2

    公开(公告)日:2022-05-17

    申请号:US16118779

    申请日:2018-08-31

    Applicant: CreeLED, Inc.

    Abstract: Light-emitting diodes (LEDs), LED arrays, and related devices are disclosed. An LED device includes a first LED chip and a second LED chip mounted on a submount with a light-altering material in between. The light-altering material may include at least one of a light-reflective material and/or a light-absorbing material. Individual wavelength conversion elements may be arranged on each of the first and second LED chips. The light-altering material may improve the contrast between the first and second LED chips as well as between the individual wavelength conversion elements. LED devices may include submounts in modular configurations where LED chips may be mounted on adjacent submounts to form an LED array. Each LED chip of the LED array may be laterally separated from at least one other LED chip by a same distance and a light-altering material may be arranged around the LED array.

    STACKED LED CHIPS
    8.
    发明申请

    公开(公告)号:US20250006712A1

    公开(公告)日:2025-01-02

    申请号:US18345270

    申请日:2023-06-30

    Applicant: CreeLED, Inc.

    Abstract: Embodiments of a light-emitting diode (LED) device are disclosed. In some embodiments, the LED device includes a first LED device and one or more other LED devices mounted to the first LED device. By mounting the other LED devices to the first LED device, the LED devices are arranged in a stacked configuration. This allows for better light mixing of the light emitted by the various LED devices since the LED devices are at least partially aligned with one another. Different manners of stacking the LED devices are disclosed. The scope of the disclosure includes the specific embodiments disclosed as well as other combinations depending on the color mixing profile that is desired.

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