LED chips with irregular microtextured light extraction surfaces, and fabrication methods

    公开(公告)号:US11894488B2

    公开(公告)日:2024-02-06

    申请号:US17357091

    申请日:2021-06-24

    Applicant: CreeLED, Inc.

    Abstract: LED chips and related fabrication methods are disclosed. A LED chip includes an active layer arranged on or over a light-transmissive substrate having a light extraction surface. The light extraction surface comprises a microtextured etched surface having a non-repeating, irregular textural pattern (e.g., with an average feature depth in a range of from 120 nm to 400 nm, and preferably free of any plurality of equally sized, shaped, and spaced textural features). The microtextured etched surface may be formed by applying a micromask having first and second solid materials of different etching rates over the light extraction surface, and exposing the micromask to an etchant (e.g., via reactive ion etching) to form a microtextured etched surface having a non-repeating, irregular textural pattern. Lumiphoric material may be applied over the microtextured surface.

    LED CHIPS AND DEVICES WITH TEXTURED LIGHT-EXTRACTING PORTIONS, AND FABRICATION METHODS

    公开(公告)号:US20220199589A1

    公开(公告)日:2022-06-23

    申请号:US17538078

    申请日:2021-11-30

    Applicant: CreeLED, Inc.

    Abstract: Pixelated-LED chips include substrate sidewalls with sidewall involutions and/or increased sidewall surface area regions to affect light extraction therefrom. A LED lighting device incorporates a superstrate that supports lumiphoric material and includes sidewalls with sidewall involutions and/or increased sidewall surface area regions. Methods for fabricating sidewall features may include etching (e.g., deep etching) of substrate or superstrate materials, such as by using an etch mask having edges with non-linear shapes to produce and/or enhance sidewall involutions when an etchant is supplied through the etch mask to selectively consume substrate or superstrate material.

    SOLID STATE LIGHT EMITTING COMPONENTS WITH UNITARY LENS STRUCTURES

    公开(公告)号:US20250056939A1

    公开(公告)日:2025-02-13

    申请号:US18456877

    申请日:2023-08-28

    Applicant: CreeLED, Inc.

    Abstract: Solid state light emitting components include novel lens structures arranged in contact with at least one solid state light emitters, without an intervening air gap, to provide desirable combinations of output characteristics and dispensing with the need for secondary optics. A lens structure includes an inclined or curved surface having an orientation configured to produce total internal reflection (TIR) of light emissions toward light exit surfaces. A non-Lambertian lens structure is configured to produce focused output emissions or dispersed output emissions with specified distributions over angular ranges. A unitary lens structure may include a recess shaped as an inverted pyramid, an inverted cone, or a trench with a nadir that is registered with an emissive center of a solid state emitter, with walls configured to produce TIR.

    Light emitting diodes, components and related methods

    公开(公告)号:US12142711B2

    公开(公告)日:2024-11-12

    申请号:US17116576

    申请日:2020-12-09

    Applicant: CreeLED, Inc.

    Abstract: Light emitting diodes, components, and related methods, with improved performance over existing light emitting diodes. In some embodiments, light emitter devices included herein include a submount, a light emitter, a light affecting material, and a wavelength conversion component. Wavelength conversion components provided herein include a transparent substrate having an upper surface and a lower surface, and a phosphor compound disposed on the upper surface or lower surface, wherein the wavelength conversion component is configured to alter a wavelength of a light emitted from a light source when positioned proximate to the light source.

    SIDEWALL ARRANGEMENTS FOR LIGHT-EMITTING DIODE DEVICES AND RELATED METHODS

    公开(公告)号:US20240234642A1

    公开(公告)日:2024-07-11

    申请号:US18093373

    申请日:2023-01-05

    Applicant: CreeLED, Inc.

    CPC classification number: H01L33/46 H01L33/58 H01L25/0753

    Abstract: Solid-state lighting devices, and more particularly sidewall arrangements for light-emitting devices such as light-emitting diodes (LEDs) are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The side layer around the peripheral sidewall of the LED chip can include an inner layer and an outer layer, each with different light altering properties. For example, the inner layer can be reflective so as to improve the light output and/or efficiency of the LED chip, while the outer layer can be absorptive so as to avoid interaction and/or crosstalk with neighboring LED chips. By having a reflective inner layer, and an absorptive outer layer, light output, sharpness, and contrast can be improved.

    Texturing for high density pixelated-LED chips and chip array devices

    公开(公告)号:US11817526B2

    公开(公告)日:2023-11-14

    申请号:US17084194

    申请日:2020-10-29

    Applicant: CREELED, INC.

    CPC classification number: H01L33/08 H01L33/24 H01L33/387 H01L33/50 H01L33/54

    Abstract: A pixelated-LED chip includes an active layer with active layer portions, segregated by streets, that are configured to illuminate different light-transmissive substrate portions to form pixels. A light extraction surface of each substrate portion includes protruding features and light extraction surface recesses that may be formed by sawing. Underfill material may be provided between a pixelated-LED chip and a mounting surface, as well as between pixels and between anodes and cathodes thereof. Certain implementations provide light extraction surface recesses that are non-parallel to each street defined through the active layer. Certain implementations provide light extraction surface recesses that are non-aligned with (e.g., non-parallel to) anode-cathode boundaries of each anode-cathode pair. Such arrangements reduce a likelihood of cracking in portions of a pixelated-LED chip. Methods for fabricating pixelated-LED chips are also provided.

    OPTICAL ARRANGEMENTS IN COVER STRUCTURES FOR LIGHT EMITTING DIODE PACKAGES AND RELATED METHODS

    公开(公告)号:US20220254962A1

    公开(公告)日:2022-08-11

    申请号:US17173735

    申请日:2021-02-11

    Applicant: CreeLED, Inc.

    Abstract: Optical arrangements in cover structures for packaged light-emitting diode (LED) devices are disclosed. LED packages may include a cover structure arranged over one or more LED chips. The cover structure may include arrangements of one or more sublayers or regions configured with different optical arrangements for tailoring emission characteristics for the LED package. The one or more sublayers or regions may include one or more arrangements of optical materials, including lumiphoric materials, materials with different indexes of refraction, light-scattering materials, and light-diffusing materials individually or in various combinations with one another to provide one or more of improved light output, increased light extraction, improved emission uniformity, and improved emission contrast for the LED package. Related methods include providing individual sheets of precursor materials that include different optical arrangements and firing the sheets together to form cover structures.

    LED CHIPS WITH IRREGULAR MICROTEXTURED LIGHT EXTRACTION SURFACES, AND FABRICATION METHODS

    公开(公告)号:US20210408328A1

    公开(公告)日:2021-12-30

    申请号:US17357091

    申请日:2021-06-24

    Applicant: CreeLED, Inc.

    Abstract: LED chips and related fabrication methods are disclosed. A LED chip includes an active layer arranged on or over a light-transmissive substrate having a light extraction surface. The light extraction surface comprises a microtextured etched surface having a non-repeating, irregular textural pattern (e.g., with an average feature depth in a range of from 120 nm to 400 nm, and preferably free of any plurality of equally sized, shaped, and spaced textural features). The microtextured etched surface may be formed by applying a micromask having first and second solid materials of different etching rates over the light extraction surface, and exposing the micromask to an etchant (e.g., via reactive ion etching) to form a microtextured etched surface having a non-repeating, irregular textural pattern. Lumiphoric material may be applied over the microtextured surface.

    LIGHT EMITTING DEVICE WITH LIGHT-ALTERING MATERIAL LAYER, AND FABRICATION METHOD UTILIZING SEALING TEMPLATE

    公开(公告)号:US20240055570A1

    公开(公告)日:2024-02-15

    申请号:US17885765

    申请日:2022-08-11

    Applicant: CreeLED, Inc.

    Abstract: Solid state light emitting devices include at least one LED chip with a light-altering material arranged over an entire upper surface thereof, with lateral edges of the LED chip device of lumiphoric material, and at least one of a fill material layer contacting lateral surfaces of the LED chip or a scattering material layer contacting lateral surfaces of a light-altering material when the light-altering material is a lumiphoric material. A method for fabricating a solid state light emitting device comprises applying a fill material layer to contact lateral surfaces of a LED chip, adhering a sealing material template over the fill material, and applying a light-altering material through a window in the template to an upper surface of the LED chip, followed by removal of the template, optionally preceded by impingement of UV emissions to reduce adhesive tack and promote release of the template.

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