公开(公告)号：US10121663B2

公开(公告)日：2018-11-06

申请号：US15320799

申请日：2015-03-26

Applicant: DENSO CORPORATION

Inventor： Yoshinori Tsuchiya ,  Hiroyuki Tarumi ,  Shinichi Hoshi ,  Masaki Matsui ,  Kenji Itoh ,  Tetsuo Narita ,  Tetsu Kachi

IPC: H01L21/223 ,  H01L21/20 ,  H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L21/28 ,  H01L29/417 ,  H01L29/51

Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm−3.

公开(公告)号：US20150053996A1

公开(公告)日：2015-02-26

申请号：US14389185

申请日：2012-11-01

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  DENSO CORPORATION

Inventor： Tetsuo Narita ,  Kenji Ito ,  Kazuyoshi Tomita ,  Nobuyuki Otake ,  Shinichi Hoshi ,  Masaki Matsui

IPC: H01L29/20 ,  C30B29/40 ,  C30B25/18 ,  C30B25/08 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/2003 ,  C30B25/08 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L29/045 ,  H01L33/007

Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

Abstract translation: 促进了硅单晶衬底上的III族氮化物单晶的阶跃流生长。 在硅单晶衬底的表面上形成定向为硅单晶的<111>轴的氧化物层，并且III族氮化物单晶在氧化物层的表面上结晶。 因此，经历晶体生长的III族氮化物单晶的<0001>轴取向为氧化物的c轴。 当硅单晶衬底具有误差角时，发生III族氮化物单晶的阶跃流生长。 通过对形成在硅单晶和氧化物的界面处的氧化硅层进行脱氧，氧化物的取向得到改善。

公开(公告)号：US09728609B2

公开(公告)日：2017-08-08

申请号：US14389185

申请日：2012-11-01

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  DENSO CORPORATION

Inventor： Tetsuo Narita ,  Kenji Ito ,  Kazuyoshi Tomita ,  Nobuyuki Otake ,  Shinichi Hoshi ,  Masaki Matsui

IPC: H01L29/15 ,  H01L29/20 ,  C30B29/40 ,  H01L21/02 ,  C30B25/08 ,  C30B25/18 ,  H01L29/04 ,  H01L33/00

CPC classification number: H01L29/2003 ,  C30B25/08 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L29/045 ,  H01L33/007

Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.