公开(公告)号：US10121663B2

公开(公告)日：2018-11-06

申请号：US15320799

申请日：2015-03-26

Applicant: DENSO CORPORATION

Inventor： Yoshinori Tsuchiya ,  Hiroyuki Tarumi ,  Shinichi Hoshi ,  Masaki Matsui ,  Kenji Itoh ,  Tetsuo Narita ,  Tetsu Kachi

IPC: H01L21/223 ,  H01L21/20 ,  H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L21/28 ,  H01L29/417 ,  H01L29/51

Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm−3.

公开(公告)号：US11764546B2

公开(公告)日：2023-09-19

申请号：US17501497

申请日：2021-10-14

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  QD LASER, Inc.

Inventor： Yuki Kamata ,  Hiroyuki Tarumi ,  Koichi Oyama ,  Keizo Takemasa ,  Kenichi Nishi ,  Yutaka Onishi

IPC: H01S5/34 ,  H01S5/10 ,  H01S5/042 ,  H01S5/14 ,  H01S3/08036 ,  H01S5/30

CPC classification number: H01S5/341 ,  H01S3/08036 ,  H01S5/04256 ,  H01S5/1096 ,  H01S5/141 ,  H01S5/3412 ,  H01S5/3054 ,  H01S5/3086

Abstract: The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.

公开(公告)号：US11955772B2

公开(公告)日：2024-04-09

申请号：US17210939

申请日：2021-03-24

Applicant: DENSO CORPORATION ,  KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION

Inventor： Yuki Kamata ,  Koichi Oyama ,  Hiroyuki Tarumi ,  Kiichi Hamamoto ,  Haisong Jiang

IPC: H01S5/10 ,  H01S5/026 ,  H01S5/042

CPC classification number: H01S5/1003 ,  H01S5/026 ,  H01S5/04256

Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.