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    Semiconductor device and method of fabricating the same
    1.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08004023B2

    公开(公告)日：2011-08-23

    申请号：US12000504

    申请日：2007-12-13

    申请人： Dae-won Ha ,  Tae-hyun An ,  Min-young Shim

    发明人： Dae-won Ha ,  Tae-hyun An ,  Min-young Shim

    IPC分类号： H01L29/76

    CPC分类号： H01L29/94 ,  H01L21/823418 ,  H01L27/0629 ,  H01L27/105

    摘要： A semiconductor device having a semiconductor substrate including a first region and a second region is provided. The semiconductor device further includes a gate electrode on the first region and having a first sidewall and a second sidewall, a first source region in the first region proximate to the first sidewall, a first drain region in the first region proximate to the second sidewall, an upper electrode on the second region and having a first sidewall and a second sidewall, a second source region in the second region proximate to the first sidewall of the upper electrode, and a second drain region in the second region proximate to the second sidewall of the upper electrode, wherein an impurity doping concentration of the first source region and the first drain region is greater than an impurity doping concentration of the second source region and the second drain region.

    摘要翻译： 提供具有包括第一区域和第二区域的半导体衬底的半导体器件。 所述半导体器件还包括位于所述第一区域上并具有第一侧壁和第二侧壁的栅电极，所述第一区域中靠近所述第一侧壁的第一源极区域，所述第一区域中靠近所述第二侧壁的第一漏极区域， 在第二区域上的上电极，具有第一侧壁和第二侧壁，第二区域中靠近上电极的第一侧壁的第二区域，以及靠近第二侧壁的第二区域中的第二漏极区域 所述上电极，其中所述第一源极区域和所述第一漏极区域的杂质掺杂浓度大于所述第二源极区域和所述第二漏极区域的杂质掺杂浓度。

    Semiconductor device and method of fabricating the same
    2.
    发明申请
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20080179648A1

    公开(公告)日：2008-07-31

    申请号：US12000504

    申请日：2007-12-13

    申请人： Dae-won Ha ,  Tae-hyun An ,  Min-young Shim

    发明人： Dae-won Ha ,  Tae-hyun An ,  Min-young Shim

    IPC分类号： H01L27/108 ,  H01L21/8242

    CPC分类号： H01L29/94 ,  H01L21/823418 ,  H01L27/0629 ,  H01L27/105

    摘要： A semiconductor device having a semiconductor substrate including a first region and a second region is provided. The semiconductor device further includes a gate electrode on the first region and having a first sidewall and a second sidewall, a first source region in the first region proximate to the first sidewall, a first drain region in the first region proximate to the second sidewall, an upper electrode on the second region and having a first sidewall and a second sidewall, a second source region in the second region proximate to the first sidewall of the upper electrode, and a second drain region in the second region proximate to the second sidewall of the upper electrode, wherein an impurity doping concentration of the first source region and the first drain region is greater than an impurity doping concentration of the second source region and the second drain region.

    摘要翻译： 提供具有包括第一区域和第二区域的半导体衬底的半导体器件。 所述半导体器件还包括位于所述第一区域上并具有第一侧壁和第二侧壁的栅电极，所述第一区域中靠近所述第一侧壁的第一源极区域，所述第一区域中靠近所述第二侧壁的第一漏极区域， 在第二区域上的上电极，具有第一侧壁和第二侧壁，第二区域中靠近上电极的第一侧壁的第二区域，以及靠近第二侧壁的第二区域中的第二漏极区域 所述上电极，其中所述第一源极区域和所述第一漏极区域的杂质掺杂浓度大于所述第二源极区域和所述第二漏极区域的杂质掺杂浓度。