APPARATUS FOR DIAGNOSING TEMPERATURE STATE OF CARRIER OF CATALYST CONVERTER
    4.
    发明申请
    APPARATUS FOR DIAGNOSING TEMPERATURE STATE OF CARRIER OF CATALYST CONVERTER 有权
    用于诊断催化转化器载体温度的装置

    公开(公告)号:US20110268613A1

    公开(公告)日:2011-11-03

    申请号:US13096344

    申请日:2011-04-28

    IPC分类号: B01J19/00 F01N3/02

    摘要: An apparatus is used for diagnosing the temperature state of a catalyst converter. The catalyst converter includes a catalyst for cleaning an emission, and a conductive carrier for carrying the catalyst. The conductive carrier is energized for temperature rise of the catalyst, and the conductive carrier has a characteristic in which resistance drops with temperature increase. In the apparatus, a first obtaining unit obtains a first parameter having a first correlation with supply power to the conductive carrier for energization of the conductive carrier. A second obtaining unit obtains a second parameter having a second correlation with a temperature of the conductive carrier. A diagnosing unit diagnoses the temperature state of the conductive carrier based on a comparison between the first parameter and the second parameter.

    摘要翻译: 一种装置用于诊断催化转化器的温度状态。 催化剂转化器包括用于清洁发射的催化剂和用于承载催化剂的导电载体。 导电载体通电用于催化剂的升温,并且导电载体具有其中电阻随温度升高而下降的特性。 在该装置中,第一获取单元获得与导电载体具有与供电功率的第一相关性的第一参数,以对导电载体通电。 第二获取单元获得与导电载体的温度具有第二相关性的第二参数。 诊断单元基于第一参数和第二参数之间的比较来诊断导电载体的温度状态。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20090278261A1

    公开(公告)日:2009-11-12

    申请号:US12437944

    申请日:2009-05-08

    IPC分类号: H01L23/522 H01L21/768

    摘要: An interlayer insulating film is formed on the upper surface of a semiconductor substrate, and lower-level interconnects are formed in the interlayer insulating film. A liner insulating film is formed on the upper surfaces of the interlayer insulating film and lower-level interconnects. An interlayer insulating film is formed on the upper surface of the liner insulating film. Upper-level interconnects are formed in the interlayer insulating film. The lower-level interconnects and the upper-level interconnects are connected with each other through vias. Parts of the liner insulating film formed in via-adjacent regions have a greater thickness than a part thereof formed outside the via-adjacent regions.

    摘要翻译: 在半导体衬底的上表面上形成层间绝缘膜,在层间绝缘膜中形成下层布线。 衬层绝缘膜形成在层间绝缘膜和下层互连的上表面上。 在衬垫绝缘膜的上表面上形成层间绝缘膜。 在层间绝缘膜中形成上层布线。 下层互连和上层互连通过通孔彼此连接。 形成在通孔相邻区域中的衬垫绝缘膜的部分具有比形成在通孔相邻区域之外的部分更大的厚度。

    IMAGE DATA RECORDING APPARATUS, IMAGE DATA RECORDING METHOD, AND PROGRAM
    8.
    发明申请
    IMAGE DATA RECORDING APPARATUS, IMAGE DATA RECORDING METHOD, AND PROGRAM 审中-公开
    图像数据记录装置,图像数据记录方法和程序

    公开(公告)号:US20070147803A1

    公开(公告)日:2007-06-28

    申请号:US11551829

    申请日:2006-10-23

    IPC分类号: H04N5/91

    摘要: An image data recording apparatus that sets a video image aspect ratio for a recording medium according to a predetermined recording format includes a determining unit for determining whether the aspect ratio has been set for the recording medium, a selecting unit for allowing a user to select the aspect ratio to be set for the recording medium, a writing unit for writing the selected aspect ratio information in a predetermined area of the recording medium, a reading unit for reading out the aspect ratio information set for the recording medium, a setting unit for setting each unit of the image data recording apparatus according to the aspect ratio information written in the predetermined area of the recording medium or the read out aspect ratio information, and a forbidding unit for forbidding changing of the set aspect ratio.

    摘要翻译: 根据预定的记录格式设置用于记录介质的视频图像宽高比的图像数据记录装置包括:确定单元,用于确定是否为记录介质设置了宽高比;选择单元,用于允许用户选择 为记录介质设定的长宽比;写入单元,用于将所选择的宽高比信息写入记录介质的预定区域;读取单元,用于读出为记录介质设置的宽高比信息;设置单元,用于设置 根据写在记录介质的预定区域中的宽高比信息的图像数据记录装置的每个单元或读出的宽高比信息,以及禁止改变设定的纵横比的禁止单元。

    APPARATUS FOR CALCULATING TEMPERATURE OF CONDUCTIVE CARRIER OF CATALYST CONVERTER
    9.
    发明申请
    APPARATUS FOR CALCULATING TEMPERATURE OF CONDUCTIVE CARRIER OF CATALYST CONVERTER 有权
    用于计算催化转化器导电载体温度的装置

    公开(公告)号:US20110270568A1

    公开(公告)日:2011-11-03

    申请号:US13096284

    申请日:2011-04-28

    IPC分类号: G06F15/00 G01K7/16

    摘要: In an apparatus, a temperature obtainer obtains, in a learning mode of the apparatus during a conductive carrier being deenergized a, value of a carrier temperature based on a physical parameter correlative with the carrier temperature and different from a carrier resistance. A resistance obtainer instantaneously energizes, in the learning mode, the conductive carrier to obtain a value of the carrier resistance during the instant energization. A calculator obtains, in a normal operation mode of the apparatus after the learning mode, a value of the carrier resistance, and calculates, in the normal operation mode, a value of the carrier temperature based on: the obtained value of the carrier resistance in the normal operation mode, and a pair of the value of the carrier temperature and the value of the carrier resistance obtained in the learning mode.

    摘要翻译: 在装置中,温度获取器在导电载体被断电时,在装置的学习模式下,基于与载体温度相关的不同于载体电阻的物理参数,获得载流子温度的值。 电阻获取器在学习模式下瞬时通电导电载体,以在即时通电期间获得载流子电阻的值。 计算器在学习模式之后的装置的正常操作模式下获得载波电阻的值,并且在正常操作模式中,根据所获得的载波电阻值,计算载波温度的值 正常工作模式,以及在学习模式下获得的一对载体温度值和载流子电阻值。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20090302473A1

    公开(公告)日:2009-12-10

    申请号:US12539852

    申请日:2009-08-12

    IPC分类号: H01L23/522 H01L21/768

    摘要: A semiconductor device includes: a first interlayer insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the first interlayer insulating film; and a via and a dummy via, which are formed in the first interlayer insulating film so as to connect to at least one of the plurality of interconnects. A void is selectively formed between adjacent ones of the interconnects in the first interlayer insulating film. The dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect. The via and the dummy via are surrounded by the first interlayer insulating film with no void interposed therebetween.

    摘要翻译: 半导体器件包括:形成在半导体衬底上的第一层间绝缘膜; 形成在所述第一层间绝缘膜中的多个互连; 以及形成在第一层间绝缘膜中以连接到多个互连中的至少一个的通孔和虚设通孔。 在第一层间绝缘膜中的相邻的互连之间选择性地形成空隙。 虚拟通孔形成在与空隙接触的互连件下,以便连接到互连。 通孔和虚设通孔被第一层间绝缘膜围绕,其间没有空隙。