摘要:
A power output apparatus for outputting power to a drive shaft includes a control unit that controls an internal combustion engine to perform an idle operation at a predetermined rotation speed, executes idle control amount learning, in which an idle control amount serving as a control amount obtained during the control is learned in accordance with establishment of a predetermined learning condition, within a range in which a rotation speed of the drive shaft is lower than a first speed, when the idle control amount learning is incomplete, and executes again the idle control amount learning within a range in which the rotation speed of the drive shaft is lower than a second speed, which is lower than the first speed, when the idle control amount learning is complete.
摘要:
If an ECU of a hybrid vehicle receives an EV request signal from an EV switch, the ECU determines whether an intermittency prohibition operation for emission deterioration prevention is in progress. The EV request signal indicates that a driver requests EV running using only a motor. If the ECU determines that the intermittency prohibition operation for the emission deterioration prevention is in progress, the ECU does not allow the EV running request from the driver but operates the engine continuously. Thus, the emission deterioration of the hybrid vehicle can be inhibited appropriately.
摘要:
A power output apparatus includes a control unit that controls an internal combustion engine, a generator, and an electric motor such that a required driving force is output to a drive shaft. The control unit learns an idle control amount, which is a control amount obtained during an idle operation of the internal combustion engine, in accordance with establishment of a predetermined learning condition when a rotation variation amount of the drive shaft is within a predetermined range including a value of zero, and does not learn the idle control amount when the rotation variation amount of the drive shaft is not within the predetermined range.
摘要:
An apparatus is used for diagnosing the temperature state of a catalyst converter. The catalyst converter includes a catalyst for cleaning an emission, and a conductive carrier for carrying the catalyst. The conductive carrier is energized for temperature rise of the catalyst, and the conductive carrier has a characteristic in which resistance drops with temperature increase. In the apparatus, a first obtaining unit obtains a first parameter having a first correlation with supply power to the conductive carrier for energization of the conductive carrier. A second obtaining unit obtains a second parameter having a second correlation with a temperature of the conductive carrier. A diagnosing unit diagnoses the temperature state of the conductive carrier based on a comparison between the first parameter and the second parameter.
摘要:
A first insulating film is provided between a lower interconnect and an upper interconnect. The lower interconnect and the upper interconnect are connected to each other by way of a via formed in the first insulating film. A dummy via or an insulating slit is formed on/in the upper interconnect near the via.
摘要:
A first insulating film is provided between a lower interconnect and an upper interconnect. The lower interconnect and the upper interconnect are connected to each other by way of a via formed in the first insulating film. A dummy via or an insulating slit is formed on/in the upper interconnect near the via.
摘要:
An interlayer insulating film is formed on the upper surface of a semiconductor substrate, and lower-level interconnects are formed in the interlayer insulating film. A liner insulating film is formed on the upper surfaces of the interlayer insulating film and lower-level interconnects. An interlayer insulating film is formed on the upper surface of the liner insulating film. Upper-level interconnects are formed in the interlayer insulating film. The lower-level interconnects and the upper-level interconnects are connected with each other through vias. Parts of the liner insulating film formed in via-adjacent regions have a greater thickness than a part thereof formed outside the via-adjacent regions.
摘要:
An image data recording apparatus that sets a video image aspect ratio for a recording medium according to a predetermined recording format includes a determining unit for determining whether the aspect ratio has been set for the recording medium, a selecting unit for allowing a user to select the aspect ratio to be set for the recording medium, a writing unit for writing the selected aspect ratio information in a predetermined area of the recording medium, a reading unit for reading out the aspect ratio information set for the recording medium, a setting unit for setting each unit of the image data recording apparatus according to the aspect ratio information written in the predetermined area of the recording medium or the read out aspect ratio information, and a forbidding unit for forbidding changing of the set aspect ratio.
摘要:
In an apparatus, a temperature obtainer obtains, in a learning mode of the apparatus during a conductive carrier being deenergized a, value of a carrier temperature based on a physical parameter correlative with the carrier temperature and different from a carrier resistance. A resistance obtainer instantaneously energizes, in the learning mode, the conductive carrier to obtain a value of the carrier resistance during the instant energization. A calculator obtains, in a normal operation mode of the apparatus after the learning mode, a value of the carrier resistance, and calculates, in the normal operation mode, a value of the carrier temperature based on: the obtained value of the carrier resistance in the normal operation mode, and a pair of the value of the carrier temperature and the value of the carrier resistance obtained in the learning mode.
摘要:
A semiconductor device includes: a first interlayer insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the first interlayer insulating film; and a via and a dummy via, which are formed in the first interlayer insulating film so as to connect to at least one of the plurality of interconnects. A void is selectively formed between adjacent ones of the interconnects in the first interlayer insulating film. The dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect. The via and the dummy via are surrounded by the first interlayer insulating film with no void interposed therebetween.