公开(公告)号：US4732733A

公开(公告)日：1988-03-22

申请号：US899397

申请日：1986-08-22

申请人： Daiji Sakamoto ,  Rikizo Watanabe

发明人： Daiji Sakamoto ,  Rikizo Watanabe

IPC分类号： H01L23/48 ,  C22C9/06 ,  H01L23/495

CPC分类号： H01L23/49579 ,  C22C9/06 ,  H01L2924/0002 ,  Y10T428/12528

摘要： A copper-base alloy for leadframes consisting essentially of 0.8-4.0 weight % of Ni, 0.2-4.0 weight % of Ti and 0.05-0.6 weight % of Mg, the balance being essentially Cu and inevitable impurities, and a ratio of Ni to Ti being 1-4. This copper-base alloy has high mechanical strength of about 50 kgf/mm.sup.2 or more and electric conductivity of 30% IACS or more as well as good solderability and solder durability. Thus, it may be used as a highly reliable material for leadframes of semiconductor devices.

摘要翻译： 用于引线框架的铜基合金基本上由Ni的0.8-4.0重量％，Ti的0.2-4.0重量％和Mg的0.05-0.6重量％组成，余量基本上为Cu和不可避免的杂质，Ni与Ti的比例 是1-4。 该铜基合金具有约50kgf / mm 2以上的机械强度和30％IACS以上的导电性以及良好的可焊性和焊料耐久性。 因此，其可以用作半导体器件的引线框架的高可靠性材料。

公开(公告)号：US4908548A

公开(公告)日：1990-03-13

申请号：US191868

申请日：1988-05-09

申请人： Tadashi Mizohata ,  Daiji Sakamoto

发明人： Tadashi Mizohata ,  Daiji Sakamoto

IPC分类号： H01J31/15

CPC分类号： H01J31/15

摘要： A fluorescent display device capable of preventing variation or flickering of luminescence due to deformation of a mesh section. The fluorescent display device includes mesh-like control electrodes each being made of a material of which the coefficient of average thermal expansion is smaller than that of the glass substrate or a spacer frame at a temperature within the range of from 30.degree. C. to 250.degree. C. and is substantially equal to or larger than that of the glass substrate or the spacer frame at a temperature within a range from 30.degree. C. to the sealing temperature of the fluorescent display device.

摘要翻译： 一种荧光显示装置，其能够防止由于网状部变形引起的发光变化或闪烁。 荧光显示装置包括网状控制电极，每个均由在30℃至250℃的温度范围内的平均热膨胀系数小于玻璃基板或间隔框架的系数的材料制成 并且在30℃至荧光显示装置的密封温度的温度下，基本上等于或大于玻璃基板或间隔框架的尺寸。

公开(公告)号：US4845543A

公开(公告)日：1989-07-04

申请号：US67969

申请日：1987-06-29

申请人： Susumu Okikawa ,  Hiroshi Mikino ,  Hiromichi Suzuki ,  Wahei Kitamura ,  Daiji Sakamoto

发明人： Susumu Okikawa ,  Hiroshi Mikino ,  Hiromichi Suzuki ,  Wahei Kitamura ,  Daiji Sakamoto

IPC分类号： B23K20/00 ,  C22C21/00 ,  H01L21/603 ,  H01L23/49

CPC分类号： H01L24/85 ,  B23K20/007 ,  C22C21/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/83805 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/29 ,  H01L24/73 ,  H01L24/78 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01205 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/20753

摘要： A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.

摘要翻译： 一种半导体器件，其中通过由含有预定量的至少一种添加元素的铝制成的接合线来连接颗粒和外部引线，所述接合线含有0.05至3.0重量％的至少一种选自铁 和钯，或含有0.05-3.0重量％的至少一种选自镍，铁和钯的第一元素和0.05-3.0重量％的至少一种选自镁，锰和硅的第二元素 从而提高了导线的耐腐蚀性，提高了导线的断裂强度。 接合线可以通过球接合连接到半导体芯片，并且公开了使用维氏硬度为30-50的球，能够将接合线与例如半导体芯片上的铝焊盘良好地接合到 实现。 具有这种硬度的球可以通过使用特定的铝合金组合物和球的淬火来提供。 接合线的形状和高度通过在接合之前的特定温度下对接合线进行退火或通过使用用于接合线的材料的特定组成来控制。 可以由铝或含有例如约1.5重量％的镁的铝组合物制成的接合线的环形和接合性被控制在最佳状态。