公开(公告)号：US4845543A

公开(公告)日：1989-07-04

申请号：US67969

申请日：1987-06-29

申请人： Susumu Okikawa ,  Hiroshi Mikino ,  Hiromichi Suzuki ,  Wahei Kitamura ,  Daiji Sakamoto

发明人： Susumu Okikawa ,  Hiroshi Mikino ,  Hiromichi Suzuki ,  Wahei Kitamura ,  Daiji Sakamoto

IPC分类号： B23K20/00 ,  C22C21/00 ,  H01L21/603 ,  H01L23/49

CPC分类号： H01L24/85 ,  B23K20/007 ,  C22C21/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/83805 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/29 ,  H01L24/73 ,  H01L24/78 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01205 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/20753

摘要： A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.

摘要翻译： 一种半导体器件，其中通过由含有预定量的至少一种添加元素的铝制成的接合线来连接颗粒和外部引线，所述接合线含有0.05至3.0重量％的至少一种选自铁 和钯，或含有0.05-3.0重量％的至少一种选自镍，铁和钯的第一元素和0.05-3.0重量％的至少一种选自镁，锰和硅的第二元素 从而提高了导线的耐腐蚀性，提高了导线的断裂强度。 接合线可以通过球接合连接到半导体芯片，并且公开了使用维氏硬度为30-50的球，能够将接合线与例如半导体芯片上的铝焊盘良好地接合到 实现。 具有这种硬度的球可以通过使用特定的铝合金组合物和球的淬火来提供。 接合线的形状和高度通过在接合之前的特定温度下对接合线进行退火或通过使用用于接合线的材料的特定组成来控制。 可以由铝或含有例如约1.5重量％的镁的铝组合物制成的接合线的环形和接合性被控制在最佳状态。

公开(公告)号：US4123293A

公开(公告)日：1978-10-31

申请号：US663471

申请日：1976-03-03

申请人： Susumu Okikawa ,  Osamu Yukawa ,  Hiroshi Mikino ,  Yoshio Nonaka

发明人： Susumu Okikawa ,  Osamu Yukawa ,  Hiroshi Mikino ,  Yoshio Nonaka

IPC分类号： H01L23/12 ,  B23K35/30 ,  H01L21/48 ,  H01L21/60 ,  H01L23/373 ,  C22F1/08

CPC分类号： H01L24/83 ,  B23K35/3013 ,  H01L21/4871 ,  H01L23/3735 ,  H01L24/29 ,  H01L2224/29101 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14

摘要： A method of providing a silicon semiconductor pellet with a heat sink and a semiconductor device with such a heat sink. The heat sink to which the pellet is bonded with a eutectic alloy of gold and silicon interposed therebetween consists mainly of copper and contains a small amount of a metal other than copper and has been subjected to an annealing treatment.

摘要翻译： 提供具有散热器的硅半导体芯片和具有这种散热器的半导体器件的方法。 其中沉积有金和硅的共晶合金的沉淀物主要由铜组成，并且含有少量的铜以外的金属并进行了退火处理。

公开(公告)号：US5031821A

公开(公告)日：1991-07-16

申请号：US395088

申请日：1989-08-16

申请人： Tsuyoshi Kaneda ,  Susumu Okikawa ,  Hiroshi Mikino ,  Hiroshi Watanabe ,  Toshihiro Satou ,  Atsushi Onodera ,  Michio Tanimoto

发明人： Tsuyoshi Kaneda ,  Susumu Okikawa ,  Hiroshi Mikino ,  Hiroshi Watanabe ,  Toshihiro Satou ,  Atsushi Onodera ,  Michio Tanimoto

IPC分类号： B23K20/00 ,  B23K20/10 ,  H01L21/00 ,  H01L23/49 ,  H01L23/495

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/10 ,  H01L23/4952 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/43821 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45669 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/7865 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85098 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/3025

摘要： The present invention is characterized in that, in a ball wedge bonding using a fine bonding wire precoated with a thin insulating layer, ultrasonic vibration is applied to a capillary to effect the delivery of the wire smoothly during movement of the capillary to a second bonding point while delivering the wire after ball bonding at a first bonding point.

摘要翻译： 本发明的特征在于，在使用预先涂覆有薄绝缘层的细接合线的球楔接合中，将超声波振动施加到毛细管，以在毛细管移动到第二接合点期间平滑地实现线的输送 同时在第一接合点的球接合之后传送线。

公开(公告)号：US4100566A

公开(公告)日：1978-07-11

申请号：US780327

申请日：1977-03-23

申请人： Susumu Okikawa ,  Hiroshi Mikino

发明人： Susumu Okikawa ,  Hiroshi Mikino

IPC分类号： H01L23/31 ,  H01L23/40 ,  H01L23/433 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L23/4006 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/3511 ,  Y10T29/49117

摘要： When a resin-sealed type semiconductor device having a heat dissipating plate is mounted on a mounting plate by means of screws or the like, means are provided to prevent occurrence of cracks in the resin sealing portion and semiconductor circuit elements embodied therein. To this end, the resin body, heat dissipating plate or mounting plate is thickened at portions thereof where screw receiving apertures are formed. Alternatively, washer or the like member may be employed.

摘要翻译： 当通过螺钉等将具有散热板的树脂密封型半导体器件安装在安装板上时，设置有用于防止树脂密封部分和其中体现的半导体电路元件发生裂纹的装置。 为此，树脂体，散热板或安装板在形成有螺钉接收孔的部分处变稠。 或者，也可以使用垫圈等。

公开(公告)号：US4326215A

公开(公告)日：1982-04-20

申请号：US96387

申请日：1979-11-21

申请人： Hiromichi Suzuki ,  Susumu Okikawa

发明人： Hiromichi Suzuki ,  Susumu Okikawa

IPC分类号： H01L23/28 ,  H01L23/31 ,  H01L23/433 ,  H01L23/492 ,  H01L23/495 ,  H01L23/02 ,  H01L23/48

CPC分类号： H01L23/49541 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/49544 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01079

摘要： A semiconductor device comprising a metallic base plate whose side surfaces are formed with cut-away portions having circular arc-shaped parts, a semiconductor element which is connected to the surface of the metallic base plate, and a resin which lies in contact with the cut-away portions and which seals the semiconductor element.

摘要翻译： 一种半导体器件，包括金属基板，其侧表面形成有具有圆弧形部分的切除部分，连接到金属基板的表面的半导体元件和与切割部分接触的树脂 并且密封半导体元件。

公开(公告)号：US06419149B1

公开(公告)日：2002-07-16

申请号：US09515072

申请日：2000-02-28

申请人： Kentaro Yano ,  Susumu Okikawa ,  Noboru Hanai

发明人： Kentaro Yano ,  Susumu Okikawa ,  Noboru Hanai

IPC分类号： B23K2004

CPC分类号： H01L21/4846 ,  B23K20/02 ,  B23K2103/12 ,  H05K3/20

摘要： A wiring layer transfer composite constituted by a laminate composed of a carrier layer, a barrier layer and a wiring-forming layer, the barrier layer being a continuous layer substantially free from defects, can be produced by (a) preparing a first Cu-based metal foil having an average thickness of 50 &mgr;m or less and an average surface roughness Rz of 5 &mgr;m or less in both surfaces for the carrier layer; (b) preparing a second Cu-based metal foil having an average thickness of 20 &mgr;m or less and an average surface roughness Rz of 5 &mgr;m or less in both surfaces for the wiring-forming layer; (c) vapor-depositing a metal having different etchability from that of Cu onto at least one of the first metal foil and the second metal foil to form the barrier layer having an average thickness of 1 &mgr;m or less; and (b) pressure-welding both metal foils via the barrier layer.

摘要翻译： 由通过载体层，阻挡层和布线形成层构成的层叠体构成的布线层转印复合体可以通过（a）制备基本上不含Cu的第一Cu基 在载体层的两个表面中平均厚度为50μm以下，平均表面粗糙度Rz为5μm以下的金属箔; （b）在布线形成层的两个表面上制备平均厚度为20μm以下且平均表面粗糙度Rz为5μm以下的第2 Cu系金属箔; （c）将具有与Cu的不同蚀刻性的金属气相沉积到第一金属箔和第二金属箔中的至少一个上，以形成平均厚度为1μm或更小的阻挡层; 和（b）经由阻挡层对两个金属箔进行加压焊接。

公开(公告)号：US4976393A

公开(公告)日：1990-12-11

申请号：US134458

申请日：1987-12-17

申请人： Makoto Nakajima ,  Yoshio Ohashi ,  Toshio Chuma ,  Kazuo Hatori ,  Isao Araki ,  Masahiro Koizumi ,  Jin Onuki ,  Hitoshi Suzuki ,  Susumu Okikawa

发明人： Makoto Nakajima ,  Yoshio Ohashi ,  Toshio Chuma ,  Kazuo Hatori ,  Isao Araki ,  Masahiro Koizumi ,  Jin Onuki ,  Hitoshi Suzuki ,  Susumu Okikawa

IPC分类号： B23K20/00 ,  H01L21/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20753 ,  H01L2924/3025

摘要： The present invention concerns a semiconductor device and a process for producing semiconductor device, as well as a wire bonding device used therefor.In accordance with the present invention, a ball formed at the top end of a bonding wire is sphericalized by electric discharge within a reducing gas atmosphere at a high temperature from 100.degree. C. to 200.degree. C. By using the ball of the bonding wire formed under such a condition to the bonding of the bonding pad of a semiconductor pellet, it is possible to conduct highly reliable ball bonding with excellent bondability and with no development of cracks or the like in the semiconductor pellet, as well as to obtain a highly reliable semiconductor device, that is, LSI or IC.

公开(公告)号：US4998002A

公开(公告)日：1991-03-05

申请号：US149081

申请日：1988-01-26

申请人： Susumu Okikawa ,  Michio Tanimoto

发明人： Susumu Okikawa ,  Michio Tanimoto

IPC分类号： B23K20/00 ,  B23K20/24 ,  H01L21/00 ,  H01L21/48 ,  H01L21/60 ,  H01L21/607 ,  H01L23/49

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/24 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/30105 ,  H01L2924/3025

摘要： A semiconductor device is fabricated by placing a semiconductor chip with at least one bonding pad on the bonding stage of a wire bonder. A coated wire on a spool is passed through a bore in a bonding capillary so that one end of the wire projects from the lower tip of the capillary. An electrical arc discharge is created between the wire tip projecting from the capillary and a discharge electrode by applying a first electric potential to this wire tip through the opposite end of the wire and applying a second electric potential to the electrode. A ball is formed on the end of the wire and this ball is bonded to the pad with the lower tip of the capillary.

公开(公告)号：US5844310A

公开(公告)日：1998-12-01

申请号：US694790

申请日：1996-08-09

申请人： Susumu Okikawa ,  Saburou Kitaguchi

发明人： Susumu Okikawa ,  Saburou Kitaguchi

IPC分类号： H01L23/373 ,  H01L23/433 ,  H01L23/495 ,  H01L23/28 ,  H01L23/29

CPC分类号： H01L23/4951 ,  H01L23/3733 ,  H01L23/4334 ,  H01L24/29 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/16195 ,  H01L2924/351 ,  Y10T29/4935 ,  Y10T29/49366 ,  Y10T29/49393 ,  Y10T428/12632 ,  Y10T428/12917

摘要： A heat spreader for a semiconductor device is constituted by an integral laminate of alternatingly stacked and diffusion-bonded Fe-Ni alloy sheets and copper-group metal sheets, the laminate having a one-directional stripe pattern of the Fe-Ni alloy sheets and the copper-group metal sheets, which appears on a planar surface on which a silicon chip is disposed. It is produced by (a) alternatingly stacking Fe-Ni alloy sheets and copper-group metal sheets, (b) hot isostatic-pressing the resulting stack of the metal sheets to form a slab, (c) rolling the slab vertically to the laminating direction of the metal sheets to form an integrated stripe-pattern laminate, and (d) cutting the integrated stripe-pattern laminate to a predetermined shape.

摘要翻译： 用于半导体器件的散热器由交替层叠和扩散接合的Fe-Ni合金片和铜族金属片的整体层压体构成，该层压体具有Fe-Ni合金片的单向条纹图案和 铜基金属片，其出现在其上设置硅芯片的平面上。 （a）交替堆叠Fe-Ni合金板和铜族金属片，（b）对所得到的金属板叠层进行热等静压加工，形成板坯，（c）将板坯垂直轧制成层压 方向形成一体的条纹图案层叠体，（d）将一体的条纹图案层叠体切割成规定的形状。

公开(公告)号：US5152450A

公开(公告)日：1992-10-06

申请号：US619504

申请日：1990-11-29

申请人： Susumu Okikawa ,  Michio Tanimoto

发明人： Susumu Okikawa ,  Michio Tanimoto

IPC分类号： B23K20/00 ,  B23K20/24 ,  H01L21/00 ,  H01L21/48 ,  H01L21/607 ,  H01L23/49

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/24 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/30105 ,  H01L2924/3025

摘要： The present invention relates to a wire bonding method and a wire bonding apparatus employing a coated wire in which the surface of the metal wire is coated with an insulator, and a semiconductor device produced by the bonding method. The present invention includes forming a metal ball on the front end of the coated wire, e.g., by arc discharge; joining the metal ball to an external terminal of a semiconductor chip; bringing the rear end of the coated wire into contact with an external lead and destroying the insulator coating where the coated wire contacts the lead; and joining the metal wire at the rear end of the coated wire to the lead. The metal wire is connected to a common ground with the bonding device, during the arc discharge, and the wire is positive relative to the discharge electrode. Moreover, the melting and shrinking insulator of the coated wire is blown away, and insulator globes can be prevented from being formed in the coated wire, so that bonding defects are avoidable.

摘要翻译： 引线接合方法和引线接合装置技术领域本发明涉及引线接合方法和使用其中金属线的表面涂覆有绝缘体的涂覆线的引线接合装置以及通过接合方法制造的半导体器件。 本发明包括例如通过电弧放电在涂覆线的前端形成金属球; 将所述金属球接合到半导体芯片的外部端子; 使涂层线的后端与外部引线接触，并破坏涂覆的电线与引线接触的绝缘体涂层; 并且将涂覆线的后端处的金属线接合到引线。 在电弧放电期间，金属线与接合装置连接到公共地，并且导线相对于放电电极是正的。 此外，被覆线的熔融和收缩的绝缘体被吹走，并且可以防止在涂覆的线中形成绝缘体球，使得可以避免接合缺陷。