公开(公告)号：US08841757B2

公开(公告)日：2014-09-23

申请号：US13298614

申请日：2011-11-17

申请人： Daisuke Uenda ,  Takeshi Matsumura ,  Koichi Inoue ,  Miki Morita

发明人： Daisuke Uenda ,  Takeshi Matsumura ,  Koichi Inoue ,  Miki Morita

IPC分类号： H01L21/00 ,  H01L23/552 ,  H01L21/683 ,  H01L21/56 ,  H01L23/544

CPC分类号： H01L23/552 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2224/83862 ,  H01L2924/01019 ,  H01L2924/01037 ,  H01L2924/01055 ,  H01L2924/01079 ,  Y10T428/28 ,  H01L2924/00

摘要： An electromagnetic wave shielding layer can be provided on the backside of a semiconductor element that is flip-chip connected to an adherend, and a semiconductor device having the electromagnetic wave shielding layer can be manufactured without deteriorating productivity. The present invention provides a film for the backside of a flip-chip type semiconductor to be formed on the backside of a semiconductor element that is flip-chip connected to an adherend, having an adhesive layer and an electromagnetic wave shielding layer.

摘要翻译： 可以在倒装芯片连接到被粘物的半导体元件的背面设置电磁波屏蔽层，并且可以制造具有电磁波屏蔽层的半导体器件，而不会降低生产率。 本发明提供了一种用于倒装芯片型半导体的背面的薄膜，该薄膜将形成在半导体元件的背面，该半导体元件倒装芯片连接到具有粘合剂层和电磁波屏蔽层的被粘物。

公开(公告)号：US08658515B2

公开(公告)日：2014-02-25

申请号：US13415073

申请日：2012-03-08

申请人： Koichi Inoue ,  Miki Morita ,  Yuichiro Shishido

发明人： Koichi Inoue ,  Miki Morita ,  Yuichiro Shishido

IPC分类号： H01L21/00

CPC分类号： H01L21/56 ,  C09J2203/326 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/83906 ,  H01L2224/85205 ,  H01L2224/9205 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The present invention aims to provides a method of manufacturing a film for a semiconductor device in which a dicing film, a die bond film, and a protecting film are laminated in this order, including the steps of: irradiating the die bond film with a light ray having a wavelength of 400 to 800 nm to detect the position of the die bond film based on the obtained light transmittance and punching the dicing film out based on the detected position of the die bond film, and in which T2/T1 is 0.04 or more, wherein T1 is the light transmittance of the portion where the dicing film and the protecting film are laminated and T2 is the light transmittance of the portion where the dicing film, the die bond film, and the protecting film are laminated.

摘要翻译： 本发明的目的在于提供一种半导体装置用膜的制造方法，其中切割膜，芯片接合膜和保护膜依次层叠，包括以下步骤：用光照射芯片接合膜 根据获得的透光率检测芯片接合膜的位置，并根据检测到的芯片接合膜的位置对该切割膜进行冲压，其中T2 / T1为0.04或 其中，T1是层叠有切割膜和保护膜的部分的透光率，T2是层叠有切割膜，芯片接合膜和保护膜的部分的透光率。

公开(公告)号：US5112532A

公开(公告)日：1992-05-12

申请号：US384965

申请日：1989-07-24

申请人： Hidetaka Ninomiya ,  Noritaka Nakayama ,  Toyoaki Masukawa ,  Miki Morita

发明人： Hidetaka Ninomiya ,  Noritaka Nakayama ,  Toyoaki Masukawa ,  Miki Morita

IPC分类号： G02F1/35 ,  C07D233/54 ,  C07D233/58 ,  C07D233/60 ,  C07D233/64 ,  C07D233/70 ,  C07D233/84 ,  C07D233/88 ,  C07D233/90 ,  C07D235/18 ,  C07D401/04 ,  C07D401/14 ,  C07D403/10 ,  C07D403/14 ,  G02F1/355 ,  G02F1/361

CPC分类号： C07D233/64 ,  C07D233/70 ,  C07D233/88 ,  C07D235/18 ,  C07D403/10 ,  C07D403/14 ,  G02F1/3612

摘要： A novel organic non-linear optical material and a device using the same are disclosed. The material hardly makes reversal symmetrical molecular configuration in a bulk state such as a crystal and a thin layer and shows a high non-linear optical effect. A non-linear optical device using the material has an excellent properties. The organic non-linear optical material is comprised of the following compound: ##STR1## wherein R.sub.1, R.sub.3 and R.sub.4 are independently a hydrogen atom, a cyano group, a phenyl group, an amino group, an alkoxy group, an acylamino group, an alkylthio group, an alkyl group, an alkoxycarbonyl group, carbamoyl group or a heterocyclic group, provided that R.sub.3 is allowed to link together with R.sub.4 to form a ring and R.sub.1, R.sub.3 and R.sub.4 are not hydrogen atom at the same time; R.sub.2 is a hydrogen atom, an alkyl group or an acyl group; and said groups represented by R.sub.1, R.sub.2, R.sub.3, R.sub.4 and the ring formed by linking the groups represented by R.sub.3 and R.sub.4 are allowed to have a substituent.

公开(公告)号：US4909598A

公开(公告)日：1990-03-20

申请号：US384984

申请日：1989-07-24

申请人： Hidetaka Ninomiya ,  Miki Morita ,  Yoshitaka Takahashi

发明人： Hidetaka Ninomiya ,  Miki Morita ,  Yoshitaka Takahashi

IPC分类号： G02F1/361

CPC分类号： G02F1/361

摘要： A non-linear optical device applicable to use such as the generation of the higher harmonic waves and the parametric amplification of laser beam is disclosed. The device comprises a crystal of a compound represented by the following Formula I: ##STR1## wherein A is an electron attractive group having 0 to 5 carbon atoms; R.sub.1 is a hydrogen atom, an alkyl group or an alkenyl group; R.sub.2 is a hydroxyl group, an acylamino group or a ureido group; and R.sub.3 is a hydrogen atom or a mono-valent substituent.