公开(公告)号：US06592736B2

公开(公告)日：2003-07-15

申请号：US09683597

申请日：2002-01-23

申请人： Dakin Fulton ,  Thomas L. Ritzdorf

发明人： Dakin Fulton ,  Thomas L. Ritzdorf

IPC分类号： C25D500

CPC分类号： C25D21/14 ,  G05D11/133 ,  Y10T436/11

摘要： An automated chemical management system for managing the chemical content of an electrochemical bath used to deposit a material on the surface of a microelectronic workpiece is set forth. The automated chemical management system includes a dosing system that is adapted to dose an amount of one or more chemicals to replenish a given electrochemical bath constituent in accordance with a predetermined dosing equation. The chemical management system also includes an analytical measurement system that is adapted to provide a measurement result indicative of the amount of the given constituent in the electrochemical bath at predetermined time intervals. The chemical management system uses the measurement results to modify the dosing equation of the dosing system. In this manner, the replenishment operations executed by the chemical management system are effectively refined over time thereby providing more accurate control of the amount of the target constituent in the electrochemical bath.

摘要翻译： 阐述了一种用于管理用于在微电子工件的表面上沉积材料的电化学浴的化学成分的自动化学品管理系统。 自动化学品管理系统包括一个计量系统，其适于根据预定的剂量方程来量化一种或多种化学物质量以补充给定的电化学浴组分。 化学品管理系统还包括分析测量系统，其适于以预定的时间间隔提供指示电化学浴中的给定成分的量的测量结果。 化学品管理系统使用测量结果来修改计量系统的计量方程。 以这种方式，由化学品管理系统执行的补充操作随着时间的推移得到有效的改进，从而可以更准确地控制电化学浴中的目标成分的量。

公开(公告)号：US06806186B2

公开(公告)日：2004-10-19

申请号：US09815931

申请日：2001-03-23

申请人： Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

发明人： Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

IPC分类号： H01L214763

CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

摘要翻译： 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US07144805B2

公开(公告)日：2006-12-05

申请号：US10882664

申请日：2004-07-01

申请人： LinLin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

发明人： LinLin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

摘要翻译： 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US07438788B2

公开(公告)日：2008-10-21

申请号：US11096477

申请日：2005-03-29

申请人： Kyle M. Hanson ,  Thomas L. Ritzdorf ,  Gregory J. Wilson ,  Paul R. McHugh

发明人： Kyle M. Hanson ,  Thomas L. Ritzdorf ,  Gregory J. Wilson ,  Paul R. McHugh

IPC分类号： C25D17/02 ,  C25D7/12

CPC分类号： C25D17/001 ,  C25D5/18 ,  C25D7/123 ,  C25D17/10

摘要： An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.

摘要翻译： 用于反应容器中微电子工件的电化学处理的装置和方法。 在一个实施例中，反应容器包括：具有外壁的外容器; 分配器，其耦合到所述外部容器，所述分配器具有构造成将主流引入所述外部容器中的第一出口和构造成将二次流引导到与所述主流分离的所述外部容器中的至少一个第二出口; 外部容器中的主要流动引导件联接到分配器以接收来自第一出口的主流并将其引导到工件加工位置; 所述外容器中的电介质场成形单元联接到所述分配器以接收来自所述第二出口的二次流，所述场整形单元构造成容纳所述次流与所述主流分离通过所述外容器的至少一部分，以及 所述场成形单元具有至少一个电极室，所述二次流可以通过所述至少一个电极室，而所述二次流与所述主流分离; 电极室中的电极; 以及由所述场成形单元承载在所述电极的下游的界面构件，所述界面构件与所述电极室中的所述次流体流体连通，并且所述界面构件被构造成防止所述二次流的选定物质通过所述主流 流。

公开(公告)号：US07332066B2

公开(公告)日：2008-02-19

申请号：US11053050

申请日：2005-02-07

申请人： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

发明人： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

IPC分类号： C25D7/12 ,  C25D17/00 ,  C25D17/12

CPC分类号： H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US07189318B2

公开(公告)日：2007-03-13

申请号：US09866391

申请日：2001-05-24

申请人： Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

发明人： Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

IPC分类号： B01J10/00 ,  G05B21/00 ,  G05B15/00 ,  G05D11/00 ,  G05D7/00

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

公开(公告)号：US06936153B1

公开(公告)日：2005-08-30

申请号：US08940686

申请日：1997-09-30

申请人： Thomas L. Ritzdorf

发明人： Thomas L. Ritzdorf

IPC分类号： H01L21/687 ,  C25D17/00

CPC分类号： H01L21/68728 ,  H01L21/68785

摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrodes which have a contact face which bears against the workpiece and conducts current therebetween. The contact face is provided with a contact face outer contacting surface which is made from a contact face material similar similar to the workpiece plating material which is to be plated onto the semiconductor workpiece. The contact face can be formed by pre-conditioned an electrode contact using a plating metal which is similar to the plating materials which is to be plated onto the semiconductor workpiece.

摘要翻译： 一种用于电镀系统中用于将金属层镀在半导体工件上的半导体工件保持器，并且在将铜电镀到半导体材料上方面具有特别的优点。 工件保持器包括具有抵靠工件的接触面并在其间传导电流的电极。 接触面设置有接触面外接触表面，该接触面外接触表面由类似于要被电镀到半导体工件上的工件电镀材料类似的接触面材料制成。 接触面可以通过使用类似于待镀覆到半导体工件上的电镀材料的电镀金属预先调节电极接触来形成。

公开(公告)号：US06921468B2

公开(公告)日：2005-07-26

申请号：US09910481

申请日：2001-07-19

申请人： Lyndon W. Graham ,  Kyle Hanson ,  Thomas L. Ritzdorf ,  Jeffrey I. Turner

发明人： Lyndon W. Graham ,  Kyle Hanson ,  Thomas L. Ritzdorf ,  Jeffrey I. Turner

IPC分类号： C25D5/08 ,  C25D7/12 ,  H01L21/00 ,  C25D17/00

CPC分类号： H01L21/67126 ,  C25D5/08 ,  C25D17/001

摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.

摘要翻译： 阐述了一种用于电镀半导体晶片的系统。 该系统包括与半导体晶片电接触的第一电极和第二电极。 第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。 第二电极在电镀半导体晶片期间形成阳极。 还使用限定反应室的反应容器。 反应室包括导电电镀液。 在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。 辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。 电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。

公开(公告)号：US06599412B1

公开(公告)日：2003-07-29

申请号：US08940670

申请日：1997-09-30

申请人： Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Jeffrey I. Turner

发明人： Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Jeffrey I. Turner

IPC分类号： C25D2100

CPC分类号： H01L21/67751 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/08 ,  H01L21/67126

摘要： Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring !the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and, an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.

摘要翻译： 用于半导体电镀电极的原位清洁以去除电镀金属的方法和装置，而不需要从半导体电镀设备手动去除电极。 将电极放置在电镀液中，并且具有相反极性的电流在电极和电镀液之间通过。 积聚在电极上的电镀沉积物电化学溶解并从电极中去除。

公开(公告)号：US06508920B1

公开(公告)日：2003-01-21

申请号：US09387577

申请日：1999-08-31

申请人： Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

发明人： Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

IPC分类号： C25D1700

CPC分类号： H01L21/67173 ,  C25D5/022 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76883

摘要： A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

摘要翻译： 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。