公开(公告)号：US20080314288A1

公开(公告)日：2008-12-25

申请号：US11916538

申请日：2006-05-31

申请人： Daniel Biro ,  Catherine Voyer ,  Harald Wanka ,  Jorg Koriath

发明人： Daniel Biro ,  Catherine Voyer ,  Harald Wanka ,  Jorg Koriath

IPC分类号： H01L21/471 ,  H01L29/06 ,  H01L21/22

CPC分类号： H01L21/2225 ,  C30B31/04 ,  H01L21/228 ,  H01L29/167

摘要： A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also provided are a method for producing such a doping mixture and the use thereof.

摘要翻译： 用于涂覆半导体衬底的掺杂混合物，其然后进行高温处理以形成掺杂层包括至少一种p-或n-掺杂剂，水和两种或更多种表面活性剂的混合物。 至少一种表面活性剂是非离子的。 还提供了这种掺杂混合物的制造方法及其用途。

公开(公告)号：US08043946B2

公开(公告)日：2011-10-25

申请号：US11916538

申请日：2006-05-31

申请人： Daniel Biro ,  Catherine Voyer ,  Harald Wanka ,  Jörg Koriath

发明人： Daniel Biro ,  Catherine Voyer ,  Harald Wanka ,  Jörg Koriath

IPC分类号： H01L21/04 ,  H01L21/38 ,  H01L21/02 ,  H01L21/316 ,  C09K17/40 ,  C09K17/02

CPC分类号： H01L21/2225 ,  C30B31/04 ,  H01L21/228 ,  H01L29/167

摘要： A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.

摘要翻译： 用于涂覆半导体衬底的掺杂混合物，其然后进行高温处理以形成掺杂层包括至少一种p-或n-掺杂剂，水和两种或更多种表面活性剂的混合物。 至少一种表面活性剂是非离子的。 此外，提供了这种掺杂混合物的制造方法及其用途。

公开(公告)号：US08748310B2

公开(公告)日：2014-06-10

申请号：US13805023

申请日：2011-06-16

申请人： Daniel Biro ,  Benjamin Thaidigsmann ,  Florian Clement ,  Robert Woehl ,  Edgar-Allan Wotke

发明人： Daniel Biro ,  Benjamin Thaidigsmann ,  Florian Clement ,  Robert Woehl ,  Edgar-Allan Wotke

IPC分类号： H01L21/44

CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/05 ,  Y02E10/50

摘要： A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer right through the insulating layer. The metal contact layer is formed using two pastes containing metal particles: the first paste containing metal particles is applied to local regions, and the second paste containing metal particles is applied covering at least the regions covered with the first paste and partial regions located therebetween. By global heating the semiconductor substrate the first paste penetrates the insulating layer and forms an electrically conductive contact directly with the semiconductor substrate, whereas the second paste does not penetrate the insulating layer and is electrically conductively connected to the semiconductor substrate via the first paste.

摘要翻译： 一种用于制造光伏太阳能电池的金属接触结构的方法，包括：向半导体衬底施加非导电绝缘层，向所述绝缘层施加金属接触层，以及在所述绝缘层之间产生多个局部导电连接 半导体衬底和接触层直接通过绝缘层。 使用含有金属颗粒的两个糊料形成金属接触层：将第一糊料含有金属颗粒施加到局部区域，并且将第二糊料含有金属颗粒涂覆至少覆盖第一糊料覆盖的区域和位于其间的部分区域。 通过对半导体衬底进行全局加热，第一浆料穿透绝缘层并与半导体衬底直接形成导电触点，而第二焊膏不穿透绝缘层，并通过第一焊膏与半导体衬底电连接。

公开(公告)号：US20140026936A1

公开(公告)日：2014-01-30

申请号：US13982894

申请日：2012-01-26

申请人： Benjamin Thaidigsmann ,  Florian Clement ,  Andreas Wolf ,  Daniel Biro

发明人： Benjamin Thaidigsmann ,  Florian Clement ,  Andreas Wolf ,  Daniel Biro

IPC分类号： H01L31/0224

CPC分类号： H01L31/02245 ,  H01L27/1421 ,  H01L31/0682 ,  Y02E10/547

摘要： A photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy, including at least one base region of a base-doping type, designed in a silicon substrate; at least one emitter region of an emitter-doping type that is of an opposite doping type to the base-doping type; at least one metallic base-contacting structure connected, in an electrically conductive manner, to the base region, and at least one metallic emitter-contacting structure connected, in an electrically conductive manner, to the emitter region, the base region and emitter region being arranged in such a manner that a pn-junction is formed at least in some regions between said base and emitter regions. It is essential that the base-contacting structure overlaps the emitter region in a base-bypass region and that in said overlapping region, a diode-like semiconductor contact is designed between the base-contacting structure and the emitter region, said semiconductor contact being a metal semiconductor contact or as a metal-insulator-semiconductor contact, and/or that the emitter-contacting structure overlaps the base region in an emitter-bypass region and that in this overlapping region, a diode-like semiconductor contact is designed between the emitter-contacting structure and the base region, said semiconductor contact being a metal semiconductor contact or as a metal-insulator-semiconductor contact. The invention also relates to a method for producing a solar cell.

摘要翻译： 一种用于将入射的电磁辐射转换为电能的光伏太阳能电池，包括在硅衬底中设计的至少一个基底掺杂类型的基极区域; 与基极掺杂型相反的掺杂类型的发射极掺杂型的至少一个发射极区域; 至少一个金属基底接触结构以导电方式连接到基极区域，以及至少一个金属发射极接触结构，其以导电方式连接到发射极区域，基极区域和发射极区域为 以这样的方式布置，使得至少在所述基极和发射极区域之间的一些区域中形成pn结。 重要的是，碱接触结构与基极旁路区域中的发射极区域重叠，并且在所述重叠区域中，在基极接触结构和发射极区域之间设计二极管状半导体接触，所述半导体接触是 金属半导体接触或/或金属 - 绝缘体 - 半导体接触，和/或发射极接触结构与发射极 - 旁路区域中的基极区域重叠，并且在该重叠区域中，二极管状半导体接触器设计在发射极 - 接触结构和基极区，所述半导体接触是金属半导体接触或金属 - 绝缘体 - 半导体接触。 本发明还涉及太阳能电池的制造方法。

公开(公告)号：US20130224906A1

公开(公告)日：2013-08-29

申请号：US13819849

申请日：2011-08-29

申请人： Daniel Biro ,  Jan Specht ,  Daniel Scheffler ,  Maximilian Pospischil ,  Florian Clement

发明人： Daniel Biro ,  Jan Specht ,  Daniel Scheffler ,  Maximilian Pospischil ,  Florian Clement

IPC分类号： H01L31/0224

CPC分类号： H01L31/022425 ,  H01L21/6715 ,  H05K1/092 ,  H05K3/1241 ,  H05K2203/0134 ,  Y02E10/50

摘要： A method for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell, wherein, in order to create the contact structure, a paste, which contains metal particles, is applied to a surface of a carrier substrate via at least one dispensing opening, wherein the dispensing opening and the carrier substrate are moved in relation to one another during the dispensing of the paste. The paste is circulated in a circulating region, and in each case a part of the paste is branched off out of the circulating region at a plurality of branching points and each branching point is assigned at least one dispensing opening, via which the paste branched off at the branching point is applied to the surface of the carrier substrate, wherein the paste flows through a flow path having a length of less than 1 cm in each case between being branched off out of the circulating region and being dispensed from the dispensing opening assigned to the branching point. A device for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell is also provided.

摘要翻译： 一种用于制造与光伏太阳能电池电接触的金属接触结构的方法，其中为了形成接触结构，将含有金属颗粒的糊剂通过至少一种分配物施加到载体基材的表面上 开口，其中在分配浆料期间，分配开口和载体基底相对于彼此移动。 浆料在循环区域中循环，并且在每种情况下，一部分糊料在多个分支点处从循环区域中分出，并且每个分支点被分配至少一个分配开口，通过该分配开口分配糊料 在分支点处被施加到载体基材的表面，其中糊料在每种情况下流过长度小于1cm的流动路径，在从循环区域中分出并从分配开口分配 到分支点。 还提供了一种用于制造用于与光伏太阳能电池电接触的金属接触结构的装置。

公开(公告)号：US08927317B2

公开(公告)日：2015-01-06

申请号：US13805111

申请日：2011-06-16

申请人： Ulrich Jager ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

发明人： Ulrich Jager ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

IPC分类号： H01L31/18 ,  H01L21/225 ,  H01L21/268 ,  H01L31/0224 ,  H01L31/068

CPC分类号： H01L31/18 ,  H01L21/2254 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547

摘要： A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

摘要翻译： 一种用于在半导体衬底中产生选择性掺杂结构的方法，以便产生光伏太阳能电池。 该方法包括以下步骤：A）将掺杂层（2）施加到半导体衬底的发射极侧，B）局部加热掺杂层（2）的熔化区域和位于半导体衬底下方的半导体衬底的熔化区域 掺杂层（2），使得掺杂剂通过液 - 液扩散从掺杂层（2）扩散到熔融的半导体衬底中，使得在熔融混合物固化后产生高掺杂区域（3），C）产生 通过全面加热半导体衬底，平面低掺杂区域，D）去除掺杂层（2），以及E）以掺杂侧的半导体衬底的一部分去除或转换半导体衬底的一部分， 靠近表面的高掺杂区域被去除或被转换成不导电的层。

公开(公告)号：US08900472B2

公开(公告)日：2014-12-02

申请号：US12792284

申请日：2010-06-02

申请人： Kuno Mayer ,  Mark Schumann ,  Daniel Kray ,  Teresa Orellana Peres ,  Jochen Rentsch ,  Martin Zimmer ,  Elias Kirchgässner ,  Eva Zimmer ,  Daniel Biro ,  Arpad Mihai Rostas ,  Filip Granek

发明人： Kuno Mayer ,  Mark Schumann ,  Daniel Kray ,  Teresa Orellana Peres ,  Jochen Rentsch ,  Martin Zimmer ,  Elias Kirchgässner ,  Eva Zimmer ,  Daniel Biro ,  Arpad Mihai Rostas ,  Filip Granek

IPC分类号： H01L21/302 ,  C09K13/02 ,  C11D11/00 ,  C11D7/06 ,  C11D7/26 ,  C11D7/32

CPC分类号： C11D11/0047 ,  C11D7/06 ,  C11D7/26 ,  C11D7/32

摘要： A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.

摘要翻译： 一种用于表面处理单晶晶片的液体剂，其含有碱性蚀刻剂和至少一种低挥发性有机化合物。 这种类型的系统可以用于单一蚀刻步骤中的晶片表面的清洁，损伤蚀刻和纹理化，并且专门用于具有不同表面质量的硅晶片的纹理化，无论现在是具有高表面损伤的线锯晶片， 化学抛光表面，损伤密度最小。

公开(公告)号：US20120074971A1

公开(公告)日：2012-03-29

申请号：US13255557

申请日：2010-03-10

申请人： Markus Glatthaar ,  Stefan Rein ,  Daniel Biro ,  Florian Clement ,  Michael Menko ,  Alexander Krieg

发明人： Markus Glatthaar ,  Stefan Rein ,  Daniel Biro ,  Florian Clement ,  Michael Menko ,  Alexander Krieg

IPC分类号： G01R31/00

CPC分类号： G01R1/07314 ,  G01R31/2887

摘要： A measuring device for electrically measuring a measurement structure that can be electrically contacted at one measuring side, in particular an optoelectronic element, such as a solar cell, including at least two contacting units for electrically contacting the measurement structure and at least one support element for supporting the measurement structure with the measuring side on the support element. It is essential that the measuring device includes at least one suction line for the connection to the suction unit and at least one suction opening that is connected in a fluid-conducting manner to the suction line, wherein the suction opening is arranged in and/or on the support element such that the measurement structure can be pressed against the support element by suctioning via the suction opening. When the measurement structure rests on the support element, the contacting unit can be pressed against the measuring side of the measurement structure for the electrical contacting thereof.

摘要翻译： 一种用于电测量可以在一个测量侧电接触的测量结构的测量装置，特别是诸如太阳能电池的光电子元件，包括至少两个用于电接触测量结构和至少一个支撑元件的接触单元，用于 支撑元件上的测量侧支撑测量结构。 重要的是，测量装置包括用于连接到抽吸单元的至少一个吸入管线和至少一个以流体传导方式连接到吸入管线的吸入口，其中吸入口设置在和/或 在支撑元件上，使得测量结构可以通过经由抽吸开口抽吸而压靠支撑元件。 当测量结构位于支撑元件上时，接触单元可以被压靠在测量结构的测量侧以与其接触。

公开(公告)号：US09087940B2

公开(公告)日：2015-07-21

申请号：US13810028

申请日：2011-07-11

申请人： Benjamin Thaidigsmann ,  Florian Clement ,  Daniel Biro ,  Andreas Wolf ,  Ralf Preu

发明人： Benjamin Thaidigsmann ,  Florian Clement ,  Daniel Biro ,  Andreas Wolf ,  Ralf Preu

IPC分类号： H01L21/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02245 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.

公开(公告)号：US20110272020A1

公开(公告)日：2011-11-10

申请号：US13144531

申请日：2009-12-03

申请人： Daniel Biro ,  Oliver Schultz-Wittmann ,  Anke Lemke ,  Jochen Rentsch ,  Florian Clement ,  Marc Hofmann ,  Andreas Wolf ,  Luca Gautero ,  Sebastian Mack ,  Ralf Preu

发明人： Daniel Biro ,  Oliver Schultz-Wittmann ,  Anke Lemke ,  Jochen Rentsch ,  Florian Clement ,  Marc Hofmann ,  Andreas Wolf ,  Luca Gautero ,  Sebastian Mack ,  Ralf Preu

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/1868 ,  H01L31/02245 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a solar cell from a silicon wafer, including the following process steps: A) texturizing one side of the silicon substrate (1) for improving the absorption or removing saw damage on one side of the silicon substrate (1); B) generating an emitter area (2) on one side of the silicon substrate (1) by diffusing in a doping material for forming a pn transition; C) removing a glass layer which comprises the doping material; D) applying a masking layer (3) which is a dielectric layer; E) removing one part of the material of the silicon substrate (1); F) applying metal structures (5, 6) for electrically contacting the solar cell. It is significant that thermal oxidation is performed between the process steps E and F for forming an oxide layer (4) and that the masking layer (3) and the oxide layer (4) remain on the silicon substrate (1) in the subsequent process steps.

摘要翻译： 一种从硅晶片制造太阳能电池的方法，包括以下工艺步骤：A）使硅衬底（1）的一侧变形，以改善在硅衬底（1）的一侧的吸收或去除锯损坏; B）通过在用于形成pn转变的掺杂材料中扩散而在硅衬底（1）的一侧上产生发射极区域（2） C）去除包含掺杂材料的玻璃层; D）施加作为电介质层的掩模层（3）; E）去除硅衬底（1）的材料的一部分; F）施加用于电接触太阳能电池的金属结构（5,6）。 重要的是，在用于形成氧化物层（4）的工艺步骤E和F之间进行热氧化，并且在后续工艺中，掩模层（3）和氧化物层（4）保留在硅衬底（1）上 脚步。