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    Structure of the insulator--semiconductor type
    1.
    发明授权
    Structure of the insulator--semiconductor type 失效
    绝缘体 - 半导体类型的结构

    公开(公告)号：US4320178A

    公开(公告)日：1982-03-16

    申请号：US136568

    申请日：1980-04-02

    申请人： Daniel Chemla ,  Louis Cot ,  Jean Jerphagnon ,  Jean Durand

    发明人： Daniel Chemla ,  Louis Cot ,  Jean Jerphagnon ,  Jean Durand

    IPC分类号： H01S5/00 ,  H01L21/314 ,  H01L29/51 ,  H01L29/94 ,  H01L21/18

    CPC分类号： H01L29/94 ,  H01L21/314 ,  H01L29/51

    摘要： Structure of the insulator--semiconductor type constituted by a semiconducting crystalline substrate formed from a III-V compound of formula (A.sup.III B.sup.V) coated with an insulating layer, wherein the substrate has a specific crystalline orientation and wherein the insulator is a sulphide in accordance with the formula (A.sup.III B.sup.V)S.sub.4.It also relates to a process for the preparation of such a structure.Applications of the invention occur in the fields of microelectronics and optoelectronics.

    摘要翻译： 由由绝缘层涂覆的由式（AIIIBV）III-V化合物形成的半导体晶体衬底构成的绝缘体 - 半导体类型的结构，其中该衬底具有特定的结晶取向，并且其中绝缘体是根据 公式（AIIIBV）S4。 它还涉及制备这种结构的方法。 本发明的应用发生在微电子学和光电子学领域。

    Anticorrosion means and compositions containing same
    2.
    发明授权
    Anticorrosion means and compositions containing same 失效
    防腐方法和含有其的组合物

    公开(公告)号：US4613450A

    公开(公告)日：1986-09-23

    申请号：US715918

    申请日：1985-03-25

    申请人： Francis Moran ,  Sylvain Rocher ,  Louis Cot ,  Francis Dabosi ,  Michel Duprat ,  Jean Durand

    发明人： Francis Moran ,  Sylvain Rocher ,  Louis Cot ,  Francis Dabosi ,  Michel Duprat ,  Jean Durand

    IPC分类号： C23F11/14 ,  C23F11/08 ,  C23F11/16 ,  C23F11/167 ,  C23F11/173 ,  C23F11/18 ,  C02F5/10

    CPC分类号： C23F11/08 ,  C23F11/141 ,  C23F11/1676 ,  C23F11/184

    摘要： This invention relates to a corrosion inhibitor for protecting metallic surfaces which are in contact with water, in particular circuits, apparatus and devices which use water as energetic or thermic fluid, said corrosion inhibitor being a fluorophosphate compound selected from the group consisting of:(i) compound of the formula M.sub.2.sup.I PO.sub.3 F, xH.sub.2 O(ii) compound of the formula LiM.sup.I PO.sub.3 F, xH.sub.2 O(iii) compound of the formula NaM.sup.I PO.sub.3 F, xH.sub.2 O(iv) compound of the formula M.sup.II PO.sub.3 F, xH.sub.2 O(v) compound of the formula M.sub.2.sup.I M.sup.II (PO.sub.3 F).sub.2, xH.sub.2 O(vi) compound of the formula M.sup.I PO.sub.2 F.sub.2, xH.sub.2 O(vii) compound of the formula M.sup.II (PO.sub.2 F.sub.2).sub.2, x H.sub.2 O(wherein M.sup.I is Na, K, Rb, Cs or HN.sub.4 ; M.sup.II is Mg, Ca, Ba, Sr, Zn, Cd, Mn, Ni or Co; and x is an integer or a fractional number comprised between 0 and 6) and(viii) mixtures thereof.

    摘要翻译： 本发明涉及用于保护与水接触的金属表面的腐蚀抑制剂，特别是使用水作为能量或热流体的电路，设备和装置，所述腐蚀抑制剂是选自以下的氟磷酸盐化合物：（i （Ⅹ）式NaMIPO3F，xH2O化合物（ⅳ）式MIIPO3F化合物，xH2O（Ⅴ）式M2IMII（PO3F）2化合物 ，xH 2 O（vi）式MIPO 2 F 2的化合物，xH 2 O（vii）式MII（PO 2 F 2）2的化合物，x H 2 O（其中MI是Na，K，Rb，Cs或HN 4; MII是Mg，Ca，Ba，Sr ，Zn，Cd，Mn，Ni或Co; x是0至6之间的整数或分数）和（viii）其混合物。