EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON
    1.
    发明申请
    EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON 有权
    黑硅发射极扩散条件

    公开(公告)号:US20150357506A1

    公开(公告)日:2015-12-10

    申请号:US14734256

    申请日:2015-06-09

    IPC分类号: H01L31/18

    摘要: In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

    摘要翻译: 在一些情况下,希望在制造太阳能电池时进行掺杂以提高效率。 掺杂剂扩散可以包括以下步骤:(a)初始温度斜坡,(b)掺杂剂蒸汽流,(c)驱入和(d)冷却。 然而,掺杂可能导致过度掺杂,例如在太阳能电池已经被纳米级纹理化以提供黑色硅的区域中,从而产生具有电荷载体过度复合的死区。 在本文讨论的系统和方法中,可以在两个不同的温度设定点进行掺杂剂蒸汽流和驱入步骤,以最小化或消除死区的形成。 在一些实施例中,掺杂剂蒸汽流可以在比驱入更低的温度设定点进行。

    Emitter diffusion conditions for black silicon
    2.
    发明授权
    Emitter diffusion conditions for black silicon 有权
    发射极扩散条件为黑色硅

    公开(公告)号:US09324899B2

    公开(公告)日:2016-04-26

    申请号:US14734256

    申请日:2015-06-09

    IPC分类号: H01L21/00 H01L31/18

    摘要: In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

    摘要翻译: 在一些情况下,希望在制造太阳能电池时进行掺杂以提高效率。 掺杂剂扩散可以包括以下步骤:(a)初始温度斜坡,(b)掺杂剂蒸汽流,(c)驱入和(d)冷却。 然而,掺杂可能导致过度掺杂,例如在太阳能电池已经被纳米级纹理化以提供黑色硅的区域中,从而产生具有电荷载体过度复合的死区。 在本文讨论的系统和方法中,可以在两个不同的温度设定点进行掺杂剂蒸汽流和驱入步骤,以最小化或消除死区的形成。 在一些实施例中,掺杂剂蒸汽流可以在比驱入更低的温度设定点进行。

    Solar Cells with Patterned Antireflective Surfaces
    5.
    发明申请
    Solar Cells with Patterned Antireflective Surfaces 有权
    带有图案抗反射表面的太阳能电池

    公开(公告)号:US20140322858A1

    公开(公告)日:2014-10-30

    申请号:US14260687

    申请日:2014-04-24

    IPC分类号: H01L31/18

    摘要: Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.

    摘要翻译: 用于生产纳米级织构的低反射率表面的系统和方法可用于制造太阳能电池。 可以在蚀刻工艺之前用抗蚀剂图案化衬底,其在衬底的表面上产生纳米尺度的纹理。 此外,可以对衬底进行掺杂剂扩散处理。 在掺杂剂扩散之前,衬底可以任选地进行液相沉积以沉积允许图案化掺杂的材料。 可以根据需要修改纳米尺度纹理蚀刻和掺杂剂扩散的顺序以产生纳米后发射体或预纳米发射体。

    Method for Patterned Doping of a Semiconductor
    7.
    发明申请
    Method for Patterned Doping of a Semiconductor 有权
    半导体图案掺杂的方法

    公开(公告)号:US20140322906A1

    公开(公告)日:2014-10-30

    申请号:US14260514

    申请日:2014-04-24

    IPC分类号: H01L21/223 H01L31/18

    摘要: A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of the barrier layer is defined by the polymeric material. The method further comprises removing the polymeric material, and doping the substrate. The barrier layer substantially prevents or reduces doping of the substrate to allow patterned doping regions to be formed on the substrate. The method can be repeated to allow additional doping regions to be formed on the substrate.

    摘要翻译: 改进掺杂工艺的方法允许改进对衬底上掺杂浓度的控制。 该方法可以包括以期望的图案在基底上印刷聚合物材料; 以及通过液相沉积工艺在衬底上沉积阻挡层,其中阻挡层的图案由聚合物材料限定。 该方法还包括去除聚合物材料并掺杂基底。 阻挡层基本上防止或减少衬底的掺杂以允许在衬底上形成图案化的掺杂区域。 可以重复该方法以允许在衬底上形成额外的掺杂区域。

    PHOTOINITIATOR COMPOSITIONS
    9.
    发明申请
    PHOTOINITIATOR COMPOSITIONS 审中-公开
    光敏组合物

    公开(公告)号:US20120122664A1

    公开(公告)日:2012-05-17

    申请号:US12946068

    申请日:2010-11-15

    IPC分类号: B01J31/18

    CPC分类号: C08F2/50

    摘要: A photoinitiator composition comprises at least one N-oxyazinium salt photoinitiator, a photosensitizer for the N-oxyazinium salt photoinitiator, and an N-oxyazinium salt efficiency amplifier, such as a phosphite. This composition can be used to photocure or polymerize acrylates or other polymerizable compounds.

    摘要翻译: 光引发剂组合物包含至少一种N-氧嗪鎓盐引发剂,N-氧嗪鎓盐引发剂的光敏剂和N-氧嗪鎓盐效率放大器,如亚磷酸盐。 该组合物可用于光固化或聚合丙烯酸酯或其它可聚合化合物。