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    Systems and methods for forming foil contact rear emitter solar cell
    1.
    发明授权
    Systems and methods for forming foil contact rear emitter solar cell 有权

    公开(公告)号：US10290750B2

    公开(公告)日：2019-05-14

    申请号：US15248383

    申请日：2016-08-26

    申请人： David E. Carlson ,  David Howard Levy

    发明人： David E. Carlson ,  David Howard Levy

    IPC分类号： H01L31/0224 ,  H01L31/05 ,  H01L31/0216

    摘要： A solar cell structure may provide a front surface that may include a front passivation layer and front anti-reflective layer. The solar cell structure may provide both contacts on a rear surface. In some cases, the rear surface may optionally provide passivation, doped, and/or transparent conductive oxide layers. The rear surface also provides a multilayer foil assembly (MFA). The MFA provides a first metal foil in electrical communication with doped regions of the rear surface of the substrate, such as base or emitter regions. The MFA may also provide a second metal foil that is spaced apart from the first metal foil by a dielectric layer. The first metal foil and/or the dielectric layer may include openings through the entirety of these layers, and these openings may be utilized to form laser fired contacts electrically coupled to the second metal foil, which is electrically isolated from the first metal foil. In some embodiments, it may be desirable for the second foil to provide openings as well, which can be utilized to form laser fired contacts for the first metal foil.

    EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON
    2.
    发明申请
    EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON 有权
    黑硅发射极扩散条件

    公开(公告)号：US20150357506A1

    公开(公告)日：2015-12-10

    申请号：US14734256

    申请日：2015-06-09

    申请人： Wendy G. Ahearn ,  David Howard Levy ,  Richard W. Topel, JR. ,  Theodore Zubil

    发明人： Wendy G. Ahearn ,  David Howard Levy ,  Richard W. Topel, JR. ,  Theodore Zubil

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

    摘要： In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

    摘要翻译： 在一些情况下，希望在制造太阳能电池时进行掺杂以提高效率。 掺杂剂扩散可以包括以下步骤：（a）初始温度斜坡，（b）掺杂剂蒸汽流，（c）驱入和（d）冷却。 然而，掺杂可能导致过度掺杂，例如在太阳能电池已经被纳米级纹理化以提供黑色硅的区域中，从而产生具有电荷载体过度复合的死区。 在本文讨论的系统和方法中，可以在两个不同的温度设定点进行掺杂剂蒸汽流和驱入步骤，以最小化或消除死区的形成。 在一些实施例中，掺杂剂蒸汽流可以在比驱入更低的温度设定点进行。

    LASER PROCESSED BACK CONTACT HETEROJUNCTION SOLAR CELLS
    4.
    发明申请
    LASER PROCESSED BACK CONTACT HETEROJUNCTION SOLAR CELLS 有权
    激光加工接触异质太阳能电池

    公开(公告)号：US20160268455A1

    公开(公告)日：2016-09-15

    申请号：US15068900

    申请日：2016-03-14

    申请人： David Howard Levy ,  David E. Carlson

    发明人： David Howard Levy ,  David E. Carlson

    IPC分类号： H01L31/0224 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/022441 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： An interdigitated solar cell may provide a heterojunction or tunnel junction emitter and base contacts that comprise laser processed regions that electrically couple the base contact to a substrate. Methods for manufacturing such solar cells to provide interdigitated back contacts may utilize laser processing to form laser processed regions that are isolated from the emitter. Laser processing may include laser-doping, laser-firing, laser-transfer, laser-transfer doping, laser contacting, and/or gas immersion laser doping.

    摘要翻译： 交叉指向的太阳能电池可以提供异质结或隧道结发射体和基极触点，其包括将基极触点电耦合到基板的激光处理区域。 制造这种太阳能电池以提供交叉反向接触的方法可以利用激光处理来形成与发射极隔离的激光处理区域。 激光加工可以包括激光掺杂，激光烧制，激光转移，激光转移掺杂，激光接触和/或气浸激光掺杂。

    SYSTEMS AND METHODS FOR FORMING FOIL CONTACT REAR EMITTER SOLAR CELL
    6.
    发明申请
    SYSTEMS AND METHODS FOR FORMING FOIL CONTACT REAR EMITTER SOLAR CELL 审中-公开
    用于形成接触式后置发光体太阳能电池的系统和方法

    公开(公告)号：US20170062633A1

    公开(公告)日：2017-03-02

    申请号：US15248383

    申请日：2016-08-26

    申请人： David E. Carlson ,  David Howard Levy

    发明人： David E. Carlson ,  David Howard Levy

    IPC分类号： H01L31/0224 ,  H01L31/05 ,  H01L31/0216

    CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/0516 ,  Y02E10/50

    摘要： A solar cell structure may provide a front surface that may include a front passivation layer and front anti-reflective layer. The solar cell structure may provide both contacts on a rear surface. In some cases, the rear surface may optionally provide passivation, doped, and/or transparent conductive oxide layers. The rear surface also provides a multilayer foil assembly (MFA). The MFA provides a first metal foil in electrical communication with doped regions of the rear surface of the substrate, such as base or emitter regions. The MFA may also provide a second metal foil that is spaced apart from the first metal foil by a dielectric layer. The first metal foil and/or the dielectric layer may include openings through the entirety of these layers, and these openings may be utilized to form laser fired contacts electrically coupled to the second metal foil, which is electrically isolated from the first metal foil. In some embodiments, it may be desirable for the second foil to provide openings as well, which can be utilized to form laser fired contacts for the first metal foil.

    摘要翻译： 太阳能电池结构可以提供可以包括前钝化层和前防反射层的前表面。 太阳能电池结构可以在后表面上提供两个触点。 在一些情况下，后表面可以可选地提供钝化，掺杂和/或透明的导电氧化物层。 后表面还提供了多层箔组件（MFA）。 MFA提供与衬底的后表面的诸如基极或发射极区域的掺杂区域电连通的第一金属箔。 MFA还可以提供通过介电层与第一金属箔隔开的第二金属箔。 第一金属箔和/或电介质层可以包括通过这些层的整体的开口，并且这些开口可用于形成电耦合到与第一金属箔电隔离的第二金属箔的激光烧结触头。 在一些实施例中，可能期望第二箔片也提供开口，其可用于形成用于第一金属箔片的激光烧制触点。

    Emitter diffusion conditions for black silicon
    7.
    发明授权
    Emitter diffusion conditions for black silicon 有权
    发射极扩散条件为黑色硅

    公开(公告)号：US09324899B2

    公开(公告)日：2016-04-26

    申请号：US14734256

    申请日：2015-06-09

    申请人： Wendy G. Ahearn ,  David Howard Levy ,  Richard W. Topel, Jr. ,  Theodore Zubil

    发明人： Wendy G. Ahearn ,  David Howard Levy ,  Richard W. Topel, Jr. ,  Theodore Zubil

    IPC分类号： H01L21/00 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

    摘要： In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

    摘要翻译： 在一些情况下，希望在制造太阳能电池时进行掺杂以提高效率。 掺杂剂扩散可以包括以下步骤：（a）初始温度斜坡，（b）掺杂剂蒸汽流，（c）驱入和（d）冷却。 然而，掺杂可能导致过度掺杂，例如在太阳能电池已经被纳米级纹理化以提供黑色硅的区域中，从而产生具有电荷载体过度复合的死区。 在本文讨论的系统和方法中，可以在两个不同的温度设定点进行掺杂剂蒸汽流和驱入步骤，以最小化或消除死区的形成。 在一些实施例中，掺杂剂蒸汽流可以在比驱入更低的温度设定点进行。