公开(公告)号：US20060162861A1

公开(公告)日：2006-07-27

申请号：US11038129

申请日：2005-01-21

申请人： David O'Meara ,  Shingo Maku

发明人： David O'Meara ,  Shingo Maku

IPC分类号： H01L21/306 ,  C03C25/68

CPC分类号： C03C17/001 ,  C03C17/22 ,  C03C17/23 ,  C03C2217/228 ,  C03C2217/258 ,  C03C2218/31 ,  C03C2218/33 ,  C23C16/4405 ,  Y10S438/905

摘要： A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

公开(公告)号：US07125812B2

公开(公告)日：2006-10-24

申请号：US10500150

申请日：2003-01-14

申请人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

发明人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

IPC分类号： H01L21/31

CPC分类号： C23C16/45561 ,  C23C16/308 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/452

摘要： A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

摘要翻译： CVD装置（2）形成作为氧化硅膜，氮化硅膜或氮氧化硅膜的绝缘膜。 CVD装置包括：容纳目标基板（W）的处理室（8）;将处理室中的目标基板支撑的支撑构件（20）;加热器（12），用于加热由支撑构件支撑的目标基板 ，用于对处理室进行真空排气的排气部（39），以及向处理室供给气体的供给部（40）。 供给部包括供给硅烷族气体的第一气体的第一回路（42），供给作为氧化气体的第二气体的第二回路（44），氮化气体或氮氧化气体，以及第三回路 （46）供应碳氢化合物气体的第三气体，并且可以将第一，第二和第三气体供应在一起。

公开(公告)号：US07509962B2

公开(公告)日：2009-03-31

申请号：US11038129

申请日：2005-01-21

申请人： David L. O'Meara ,  Shingo Maku

发明人： David L. O'Meara ,  Shingo Maku

IPC分类号： B08B6/00

CPC分类号： C03C17/001 ,  C03C17/22 ,  C03C17/23 ,  C03C2217/228 ,  C03C2217/258 ,  C03C2218/31 ,  C03C2218/33 ,  C23C16/4405 ,  Y10S438/905

摘要： A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

摘要翻译： 一种用于处理其中处理系统的系统组件暴露于含氯气体的铪基介质处理系统的方法和控制系统。 在除去铪之后残留在处理系统中的残余铪副产物与来自含氯气体的含氯蚀刻剂反应。 氯化铪产品从处理系统中挥发以用尽。 控制系统可利用计算机可读介质向处理系统引入含氯气体，以调节处理系统中的温度和压力中的至少一个，以从含氯气体中产生含氯气体的含氯蚀刻剂 在硅酸铪，氧化铪或氮氧化铪去除工艺之后残留在处理系统中的残余铪副产物的溶解，并从处理系统中排出氯化铪产物。

公开(公告)号：US07094708B2

公开(公告)日：2006-08-22

申请号：US10518025

申请日：2004-01-19

申请人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

发明人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

IPC分类号： H01L21/31

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/46 ,  H01L21/3185

摘要： A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

摘要翻译： CVD方法是在目标衬底（W）上形成氮化硅膜。 该方法包括在处理温度下加热容纳在处理容器（8）中的基板（W），并将包含六乙基氨基 - 乙硅烷气体和氨气的处理气体供给到在工艺温度下加热的基板（W）上，由此沉积 在衬底（W）上的氮化硅膜。

公开(公告)号：US20050255712A1

公开(公告)日：2005-11-17

申请号：US10518025

申请日：2004-01-19

申请人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

发明人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

IPC分类号： C23C16/34 ,  C23C16/46 ,  H01L21/318 ,  H01L21/471

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/46 ,  H01L21/3185

摘要： A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

摘要翻译： CVD方法是在目标衬底（W）上形成氮化硅膜。 该方法包括在处理温度下加热容纳在处理容器（8）中的基板（W），并将包含六乙基氨基 - 乙硅烷气体和氨气的处理气体供给到在工艺温度下加热的基板（W）上，由此沉积 在衬底（W）上的氮化硅膜。

公开(公告)号：US20050095770A1

公开(公告)日：2005-05-05

申请号：US10500150

申请日：2003-01-14

申请人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

发明人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/452 ,  H01L21/8238

CPC分类号： C23C16/45561 ,  C23C16/308 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/452

摘要： A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

摘要翻译： CVD装置（2）形成作为氧化硅膜，氮化硅膜或氮氧化硅膜的绝缘膜。 CVD装置包括：容纳目标基板（W）的处理室（8）;将处理室中的目标基板支撑的支撑构件（20）;加热器（12），用于加热由支撑构件支撑的目标基板 ，用于对处理室进行真空排气的排气部（39），以及向处理室供给气体的供给部（40）。 供给部包括供给硅烷族气体的第一气体的第一回路（42），供给作为氧化气体的第二气体的第二回路（44），氮化气体或氮氧化气体，以及第三回路 （46）供应碳氢化合物气体的第三气体，并且可以将第一，第二和第三气体供应在一起。