公开(公告)号：US20060162861A1

公开(公告)日：2006-07-27

申请号：US11038129

申请日：2005-01-21

申请人： David O'Meara ,  Shingo Maku

发明人： David O'Meara ,  Shingo Maku

IPC分类号： H01L21/306 ,  C03C25/68

CPC分类号： C03C17/001 ,  C03C17/22 ,  C03C17/23 ,  C03C2217/228 ,  C03C2217/258 ,  C03C2218/31 ,  C03C2218/33 ,  C23C16/4405 ,  Y10S438/905

摘要： A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

公开(公告)号：US5972804A

公开(公告)日：1999-10-26

申请号：US963436

申请日：1997-11-03

申请人： Philip J. Tobin ,  Rama I. Hegde ,  Hsing-Huang Tseng ,  David O'Meara ,  Victor Wang

发明人： Philip J. Tobin ,  Rama I. Hegde ,  Hsing-Huang Tseng ,  David O'Meara ,  Victor Wang

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/318 ,  H01L21/336 ,  H01L21/76 ,  H01L29/51 ,  H01L21/285

CPC分类号： H01L21/28202 ,  H01L21/28247 ,  H01L29/518 ,  H01L29/66575 ,  Y10S438/906

摘要： A method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate (200). This semiconductor substrate is cleaned via process steps (10-28). Optional nitridation and oxidation are performed via steps (50 and 60) to form a thin interface layer (202). Bulk oxynitride gate deposition occurs via a step (70) to form a bulk gate dielectric material (204) having custom tailored oxygen and nitrogen profile and concentration. A step (10) is then utilized to in situ cap this bulk dielectric layer (204) with a polysilicon or amorphous silicon layer (208). The layer (208) ensures that the custom tailors oxygen and nitrogen profile and concentration of the underlying gate dielectric (204) is preserved even in the presence of subsequent wafer exposure to oxygen ambients.

摘要翻译： 形成氧氮化物栅极电介质层（202,204）的方法由提供半导体衬底（200）开始。 通过工艺步骤（10-28）清洁该半导体衬底。 通过步骤（50和60）进行可选的氮化和氧化以形成薄界面层（202）。 大量氮氧化物栅极沉积通过步骤（70）发生，以形成具有定制的氧和氮分布和浓度的体栅电介质材料（204）。 然后使用步骤（10）以多晶硅或非晶硅层（208）原位覆盖该体电介质层（204）。 即使在随后的晶片暴露于氧气氛的情况下，层（208）确保定制定制氧气和氮气分布和下层栅极电介质（204）的浓度。

公开(公告)号：US20070065593A1

公开(公告)日：2007-03-22

申请号：US11231336

申请日：2005-09-21

申请人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

发明人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

IPC分类号： B05D3/00 ,  H05H1/24

CPC分类号： H01L21/02238 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31654

摘要： A method for preparing an oxide film on a substrate. A surface of a substrate is oxidized to form an oxide film. The surface is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation and plasma induced dissociation of a process gas comprising at least one molecular composition comprising oxygen.

摘要翻译： 一种在基板上制备氧化膜的方法。 将基板的表面氧化形成氧化膜。 该表面暴露于由紫外线（UV）辐射诱导的解离形成的氧自由基和等离子体诱导的包含至少一种包含氧的分子组合物的工艺气体的解离。

公开(公告)号：US20050070104A1

公开(公告)日：2005-03-31

申请号：US10674703

申请日：2003-09-30

申请人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

发明人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

摘要： A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

摘要翻译： 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

公开(公告)号：US08602418B1

公开(公告)日：2013-12-10

申请号：US12917464

申请日：2010-11-01

申请人： Steven Fred Hering ,  Carter Crittenden Bennett ,  Bradley Michael Malta ,  David O'Meara

发明人： Steven Fred Hering ,  Carter Crittenden Bennett ,  Bradley Michael Malta ,  David O'Meara

IPC分类号： F41J13/00

CPC分类号： F41J13/00

摘要： An improved projectile trap assembly includes a frame that supports a channel and a containment chamber. The containment chamber has an ingress point receiving a fired bullet and an egress point for distributing the bullet. The containment chamber is supported by a pair of bulkhead plates that are connected to the frame. Each bulkhead plate defines an aperture, with a scroll assembly being mounted between bulkhead plates proximate the aperture. The scroll assembly includes a front scroll affixed and a rear scroll detachably connected to the bulkhead plates. A side plate is detachably connected to the bulkhead plate opposite said front and rear scrolls to seal the scroll assembly to receive bullets. The containment chamber additionally includes upper and lower trap plates that are positioned proximate upper and lower channel plates at the ingress point. Finally, a plurality of collection buckets positioned below said front scroll in an adjustable position.

摘要翻译： 改进的射弹捕获器组件包括支撑通道的框架和容纳室。 安全壳有一个入口点，接收一个发射的子弹和一个出口点，用于分发子弹。 容纳室由连接到框架的一对隔板支撑。 每个隔板限定了一个孔，其中一个涡旋组件安装在靠近孔的隔板之间。 涡旋组件包括固定的前涡卷和可拆卸地连接到隔板的后涡卷。 侧板可拆卸地连接到与前后涡旋件相对的隔板，以密封涡旋组件以接收子弹。 容纳室还包括上和下陷阱板，其位于接近点处的上和下通道板附近。 最后，多个收集桶位于所述前涡卷的下方处于可调整位置。

公开(公告)号：US20070066084A1

公开(公告)日：2007-03-22

申请号：US11231335

申请日：2005-09-21

申请人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

发明人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

IPC分类号： H01L21/471 ,  B05C5/00

CPC分类号： H01L21/3185 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31662

摘要： A method and processing system for treating a surface of a substrate. The surface is exposed to at least two radicals from at least two radical sources. The radicals generated from the respective radical sources interact with different areas of the substrate surface. The invention suitably improves uniformity of oxidation, nitridation, or both.

摘要翻译： 一种用于处理基材表面的方法和处理系统。 该表面暴露于至少两个自由基来源的至少两个基团。 由各自的基团产生的自由基与衬底表面的不同区域相互作用。 本发明适合提高氧化，氮化或两者的均匀性。

公开(公告)号：US20050059259A1

公开(公告)日：2005-03-17

申请号：US10662875

申请日：2003-09-16

申请人： David O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

发明人： David O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/02181 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31658 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

摘要翻译： 提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。 扩散过滤层控制表面的氧化。 可以在氧化过程中形成界面氧化物层，该氧化过程在沉积高k层到扩散过滤层上之后或在沉积高k层到扩散过滤层上之后进行。

公开(公告)号：US20050026453A1

公开(公告)日：2005-02-03

申请号：US10630969

申请日：2003-07-31

申请人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31

CPC分类号： H01L21/28194 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.

摘要翻译： 使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。 待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。 处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。 本发明的一个实施例提供Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在衬底上变化小于约1A。

公开(公告)号：US06297173B1

公开(公告)日：2001-10-02

申请号：US09383238

申请日：1999-08-26

申请人： Philip J. Tobin ,  Rama I. Hegde ,  Hsing-Huang Tseng ,  David O'Meara ,  Victor Wang

发明人： Philip J. Tobin ,  Rama I. Hegde ,  Hsing-Huang Tseng ,  David O'Meara ,  Victor Wang

IPC分类号： H01L2131

CPC分类号： H01L27/11526 ,  H01L21/28202 ,  H01L21/28247 ,  H01L27/105 ,  H01L27/11546 ,  H01L29/518 ,  H01L29/66575

摘要： A method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate (200). This semiconductor substrate is cleaned via process steps (10-28). Optional nitridation and oxidation are performed via steps (50 and 60) to form a thin interface layer (202). Bulk oxynitride gate deposition occurs via a step (70) to form a bulk gate dielectric material (204) having custom tailored oxygen and nitrogen profile and concentration. A step (10) is then utilized to in situ cap this bulk dielectric layer (204) with a polysilicon or amorphous silicon layer (208). The layer (208) ensures that the custom tailors oxygen and nitrogen profile and concentration of the underlying gate dielectric (204) is preserved even in the presence of subsequent wafer exposure to oxygen ambients.

摘要翻译： 形成氧氮化物栅极电介质层（202,204）的方法由提供半导体衬底（200）开始。 通过工艺步骤（10-28）清洁该半导体衬底。 通过步骤（50和60）进行可选的氮化和氧化以形成薄界面层（202）。 大量氮氧化物栅极沉积通过步骤（70）发生，以形成具有定制的氧和氮分布和浓度的体栅电介质材料（204）。 然后使用步骤（10）以多晶硅或非晶硅层（208）原位覆盖该体电介质层（204）。 即使在随后的晶片暴露于氧气氛的情况下，层（208）确保定制定制氧气和氮气分布和下层栅极电介质（204）的浓度。

公开(公告)号：US20120265705A1

公开(公告)日：2012-10-18

申请号：US13085687

申请日：2011-04-13

申请人： Lynda Tollefson ,  Ashton Kawanishi ,  David O'Meara

发明人： Lynda Tollefson ,  Ashton Kawanishi ,  David O'Meara

IPC分类号： G06Q10/00

CPC分类号： G06Q30/02

摘要： A system and method for selectively conveying information via a benefits self service product. An example method includes determining, with reference to a repository of employee data, characteristics associated with an employee or prospective employee; ascertaining employee benefits options offered by an enterprise; employing the characteristics and the benefits options to select one or more example matches between one or more benefits options and an employee or prospective employee; and displaying an indication of the one or more example matches to an employee of the enterprise. In a more specific embodiment, a user interface enables an administrator to specify information comprising different cards in a set of predetermined cards. The indication of one or more example matches is provided via an electronic card that is selected from among the set of cards. The selected card is adapted to convey information pertaining to an example set of previously made choices by others with characteristics that match the characteristics of the employee or prospective employee.

摘要翻译： 一种用于通过益处自助服务产品选择性地传送信息的系统和方法。 示例性方法包括：参考员工数据库，确定与雇员或潜在雇员相关联的特征; 确定企业提供的员工福利待遇; 使用特征和益处选项来选择一个或多个福利选项与雇员或潜在雇员之间的一个或多个示例匹配; 以及向所述企业的雇员显示所述一个或多个示例匹配的指示。 在更具体的实施例中，用户界面使得管理员能够指定包括一组预定卡中的不同卡的信息。 一个或多个示例匹配的指示通过从该组卡中选择的电子卡提供。 所选择的卡适于传达与具有与雇员或潜在雇员的特征相匹配的特征的其他具有先前选择的示例的信息。