公开(公告)号：US20060186418A1

公开(公告)日：2006-08-24

申请号：US11343180

申请日：2006-01-30

申请人： John Edmond ,  David Slater ,  Hua Kong ,  Matthew Donofrio

发明人： John Edmond ,  David Slater ,  Hua Kong ,  Matthew Donofrio

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

公开(公告)号：US20060060874A1

公开(公告)日：2006-03-23

申请号：US11082470

申请日：2005-03-17

申请人： John Edmond ,  David Slater ,  Jayesh Bharathan ,  Matthew Donofrio

发明人： John Edmond ,  David Slater ,  Jayesh Bharathan ,  Matthew Donofrio

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/22 ,  H01L33/44

摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.

摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的双凸透镜表面。

公开(公告)号：US20050104072A1

公开(公告)日：2005-05-19

申请号：US10916113

申请日：2004-08-11

申请人： David Slater ,  John Edmond ,  Matthew Donofrio

发明人： David Slater ,  John Edmond ,  Matthew Donofrio

IPC分类号： H01L21/027 ,  H01L21/04 ,  H01L21/263 ,  H01L21/268 ,  H01L33/00 ,  H01L33/34 ,  H01L33/40 ,  H01L21/00 ,  H01L29/15

CPC分类号： H01L33/40 ,  H01L21/0272 ,  H01L21/0485 ,  H01L21/2636 ,  H01L21/268 ,  H01L33/0095 ,  H01L33/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat.

摘要翻译： 半导体器件的接触可以通过在碳化硅（SiC）衬底上形成金属并退火金属和SiC衬底的界面位置以形成金属SiC材料，并避免在SiC上的位置退火而形成 衬底以避免在其上形成金属-SiC材料。

公开(公告)号：US20050151138A1

公开(公告)日：2005-07-14

申请号：US10987135

申请日：2004-11-12

申请人： David Slater ,  Matthew Donofrio

发明人： David Slater ,  Matthew Donofrio

IPC分类号： H01L21/78 ,  H01L33/00 ,  H01L33/20 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12

CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L33/20

摘要： Processing a semiconductor wafer can include forming a plurality of Light Emitting Devices (LED) on a semiconductor wafer having a first thickness. The plurality of LEDs on the wafer are brought into contact with a surface of a carrier to couple the wafer to the carrier. The first thickness of the wafer is reduced to a second thickness that is less than the first thickness by processing the backside of the wafer. The carrier is separated from the plurality of LEDs on the wafer and the wafer is cut to separate the plurality of LEDs from one another. Related devices are also disclosed.

摘要翻译： 处理半导体晶片可以包括在具有第一厚度的半导体晶片上形成多个发光器件（LED）。 使晶片上的多个LED与载体的表面接触以将晶片耦合到载体。 通过处理晶片的背面，将晶片的第一厚度减小到小于第一厚度的第二厚度。 载体与晶片上的多个LED分离，并且切割晶片以将多个LED彼此分离。 还公开了相关设备。

公开(公告)号：US20060060877A1

公开(公告)日：2006-03-23

申请号：US10951042

申请日：2004-09-22

申请人： John Edmond ,  Jayesh Bharathan ,  David Slater

发明人： John Edmond ,  Jayesh Bharathan ,  David Slater

IPC分类号： H01L33/00

CPC分类号： H01L33/36 ,  H01L33/007

摘要： A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.

摘要翻译： 公开了一种制造适用于包装的高效率高抽提发光二极管的方法和结果。 该方法包括以下步骤：将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板，将添加的有源部分接合到导电子安装结构，并且将与添加的相邻的碳化硅基板相对的一部分 从而减小接合的基板，有源部分和副安装结构的整体厚度。 所得到的子安装结构可以连接到引线框架，其中有源部分位于碳化硅基板和子安装结构之间，从而使用子安装结构将有源部分与引线框架分开，并避免不必要的 有源部分和引线框架之间的电接触。

公开(公告)号：US20050029526A1

公开(公告)日：2005-02-10

申请号：US10709780

申请日：2004-05-27

申请人： Davis McClure ,  Alexander Suvorov ,  John Edmond ,  David Slater

发明人： Davis McClure ,  Alexander Suvorov ,  John Edmond ,  David Slater

IPC分类号： C30B1/00 ,  H01L21/00 ,  H01L21/04 ,  H01L21/20 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02658 ,  H01L21/046 ,  H01L21/2003 ,  H01L29/6606 ,  H01L33/0062 ,  Y10S438/931

摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

摘要翻译： 公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。 该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火 所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

公开(公告)号：US20050095737A1

公开(公告)日：2005-05-05

申请号：US10983983

申请日：2004-11-08

申请人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Mieczkowski

发明人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Mieczkowski

IPC分类号： H01L21/318 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42

摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.

摘要翻译： 公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。 二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。 还公开了一种制造发光二极管的方法和结合二极管的LED灯。

公开(公告)号：US20070161137A1

公开(公告)日：2007-07-12

申请号：US11688605

申请日：2007-03-20

申请人： David Slater ,  Bradley Williams ,  Peter Andrews ,  John Edmond ,  Scott Allen

发明人： David Slater ,  Bradley Williams ,  Peter Andrews ,  John Edmond ,  Scott Allen

IPC分类号： H01L21/00

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01057 ,  H01L2924/12041 ,  H01L2924/00

摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。

公开(公告)号：US20060033111A1

公开(公告)日：2006-02-16

申请号：US11243581

申请日：2005-10-05

申请人： Davis McClure ,  Alexander Suvorov ,  John Edmond ,  David Slater

发明人： Davis McClure ,  Alexander Suvorov ,  John Edmond ,  David Slater

IPC分类号： H01L31/0312

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02658 ,  H01L21/046 ,  H01L21/2003 ,  H01L29/6606 ,  H01L33/0062 ,  Y10S438/931

摘要： A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.

摘要翻译： 公开了一种碳化硅结构，其适用于制造诸如发光二极管的电子器件中的基板。 该结构包括具有第一表面和第二表面并具有预定导电类型和初始载流子浓度的碳化硅晶片; 注入掺杂剂原子的区域从第一表面延伸到碳化硅晶片到预定深度，该区域具有比晶片剩余部分中的初始载流子浓度更高的载流子浓度; 以及在碳化硅晶片的第一表面上的外延层。

公开(公告)号：US20050253154A1

公开(公告)日：2005-11-17

申请号：US11114639

申请日：2005-04-26

申请人： David Slater ,  John Edmond

发明人： David Slater ,  John Edmond

IPC分类号： G01N33/68 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent solder squeeze-out during thermocompression or thermosonic bonding with or without flux. In some embodiments, an AuSn bond pad is designed to accept 30 g to 70 g of force or more without squeeze-out.

摘要翻译： LED芯片包括适合于热或热压接的接合焊盘，例如Sn，AuSn或其它金属。 选择焊盘的物理尺寸以阻止或防止在具有或不具有焊剂的热压或热超声粘合期间焊料挤出。 在一些实施例中，AuSn接合焊盘设计成在不挤出的情况下接受30g至70g的力或更多的力。