公开(公告)号：US06364949B1

公开(公告)日：2002-04-02

申请号：US09421779

申请日：1999-10-19

申请人： David T. Or ,  Keith K. Koai ,  Fufa Chen ,  Lawrence C. Lei

发明人： David T. Or ,  Keith K. Koai ,  Fufa Chen ,  Lawrence C. Lei

IPC分类号： B05C1106

CPC分类号： C23C16/4557 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45591 ,  C23C16/5096

摘要： The present invention relates to plasma-enhanced chemical vapor deposition (PECVD) and related chamber hardware. Embodiments of the present invention include a PECVD system for depositing a film of titanium nitride from a TDMAT precursor. The present invention broadly provides a chamber, a gas delivery assembly, a pedestal which supports a substrate, and a plasma system to process substrates. In general, the invention includes a chamber body and a gas delivery assembly disposed thereon to define a chamber cavity. A pedestal movably disposed within the chamber cavity is adapted to support a substrate during processing. The gas delivery assembly is supported by the chamber body and includes a temperature control plate and a showerhead mounted thereto. Preferably, the interface between the showerhead and temperature control plate is parallel to a radial direction of the gas delivery assembly to accommodate lateral thermal expansion without separation of the showerhead and the temperature control plate. A blocker plate, or baffle plate, may be disposed between the showerhead and temperature control plate to facilitate dispersion of gases delivered thereto.

摘要翻译： 本发明涉及等离子体增强化学气相沉积（PECVD）和相关腔室硬件。 本发明的实施例包括用于从TDMAT前体沉积氮化钛膜的PECVD系统。 本发明广泛地提供了一个腔室，一个气体输送组件，一个支撑衬底的基座和一个用于处理衬底的等离子体系统。 通常，本发明包括一个室主体和一个设置在其上以限定腔室的气体输送组件。 可移动地设置在腔室内的基座适于在处理期间支撑衬底。 气体输送组件由腔室主体支撑并且包括安装在其上的温度控制板和喷头。 优选地，喷头和温度控制板之间的界面平行于气体输送组件的径向方向以适应横向热膨胀而不分离喷头和温度控制板。 可以在喷头和温度控制板之间设置阻挡板或挡板，以便于输送到其上的气体的分散。

公开(公告)号：US06887317B2

公开(公告)日：2005-05-03

申请号：US10241005

申请日：2002-09-10

申请人： David T. Or ,  Keith K. Koai ,  Hiroyuki Takahama ,  Takahiro Ito ,  Koji Ota ,  Hiroshi Sato

发明人： David T. Or ,  Keith K. Koai ,  Hiroyuki Takahama ,  Takahiro Ito ,  Koji Ota ,  Hiroshi Sato

IPC分类号： C23C16/44 ,  C23C16/458 ,  H01L21/687 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/68742 ,  C23C16/4401 ,  C23C16/4583

摘要： A substrate support is provided that features a lift pin having at least one larger diameter shoulder section that forms a relief region between the lift pin and a guide hole disposed through a substrate support. The shoulder section minimizes contact between the substrate support and lift pin guide hole, thereby reducing pin scratching, particle generation, component wear, and increasing the useful life of the pin. In another embodiment, a flat-bottom tip is provided to promote self-standing of the lift pin, reducing pin tilting or leaning of the lift pin within the guide hole.

摘要翻译： 提供了一种基板支撑件，其具有提升销，该提升销具有至少一个较大直径的肩部，其在提升销和通过基板支撑件布置的引导孔之间形成一个释放区域。 肩部最小化了基板支撑件和提升销引导孔之间的接触，从而减少销的刮痕，颗粒产生，部件磨损，并增加销的使用寿命。 在另一个实施例中，提供平底尖端以促进提升销的自立，减小销引导件在引导孔内的倾斜或倾斜。

公开(公告)号：US07871470B2

公开(公告)日：2011-01-18

申请号：US11426555

申请日：2006-06-26

申请人： Eric W. Schieve ,  Keith K. Koai ,  David T. Or ,  Rene T. Correa

发明人： Eric W. Schieve ,  Keith K. Koai ,  David T. Or ,  Rene T. Correa

IPC分类号： H01L21/00

CPC分类号： H01L21/68742 ,  C23C16/4582 ,  H01L21/68785

摘要： An apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a yoke comprising a curved surface with a first slot formed therethrough, a base comprising a first surface adapted to support the substrate support and a curved second surface, wherein the curved second surface mates with the curved surface of the yoke and a first slot is formed through the curved second surface of the base, and a first threaded member disposed through the first slot in the yoke and the first slot in the base.

摘要翻译： 提供了一种用于将衬底支撑件定位在处理室内的装置。 在一个实施例中，一种用于定位衬底支撑件的装置包括轭，该轭包括具有穿过其形成的第一槽的弯曲表面，基部包括适于支撑衬底支撑件的第一表面和弯曲的第二表面，其中弯曲的第二表面与 轭的弯曲表面和第一槽形成为穿过基座的弯曲的第二表面，并且第一螺纹构件设置成穿过轭的第一槽和基座中的第一槽。

公开(公告)号：USD568914S1

公开(公告)日：2008-05-13

申请号：US29256744

申请日：2006-03-24

申请人： David T. Or ,  Keith K. Koai ,  Hiroyuki Takahama ,  Takahiro Ito ,  Koji Ota ,  Hiroshi Sato

设计人： David T. Or ,  Keith K. Koai ,  Hiroyuki Takahama ,  Takahiro Ito ,  Koji Ota ,  Hiroshi Sato

公开(公告)号：US6159299A

公开(公告)日：2000-12-12

申请号：US247673

申请日：1999-02-09

申请人： Keith K. Koai ,  Lawrence Chung-Lai Lei ,  Russell C. Ellwanger

发明人： Keith K. Koai ,  Lawrence Chung-Lai Lei ,  Russell C. Ellwanger

IPC分类号： H01L21/68 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  H01L21/285 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/687 ,  H01L23/52 ,  C23C16/00 ,  H04H1/00

CPC分类号： C23C16/45521 ,  C23C16/4583 ,  H01L21/67017 ,  H01L21/68735

摘要： A wafer pedestal with a purge ring that circumscribes a peripheral edge of the wafer pedestal. The purge ring contains plurality of passages that are located proximate the peripheral edge of said wafer pedestal such that purge gas is directed towards the peripheral edge. Additionally, the purge ring cooperates with an edge ring assembly that circumscribes the purge ring. The purge ring and the edge ring assembly allow a dual-purge flow pattern to be established, which significantly reduces the accumulation of undesirable deposits upon the wafer pedestal.

摘要翻译： 具有环绕圆片基座的周缘的清洗环的晶片基座。 清洗环包含位于所述晶片基座的周缘附近的多个通道，使得净化气体被引向周边边缘。 此外，清洗环与限定清洗环的边缘环组件配合。 清洗环和边缘环组件允许建立双清洗流动模式，这显着地减少了不期望的沉积物在晶片基座上的积聚。

公开(公告)号：US06176930B1

公开(公告)日：2001-01-23

申请号：US09262756

申请日：1999-03-04

申请人： Keith K. Koai ,  Tung-Ching Tseng ,  James J. Chen ,  Mark S. Johnson ,  John Schmitt ,  Sean Li

发明人： Keith K. Koai ,  Tung-Ching Tseng ,  James J. Chen ,  Mark S. Johnson ,  John Schmitt ,  Sean Li

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/52

摘要： An apparatus and method for controlling a flow of process material to a deposition chamber. The apparatus comprises an injector valve, disposed between the process material source and the deposition chamber. The injector valve controls the flow of precursor material by repeatedly opening and closing the injector valve with a predetermined duty cycle. The apparatus further comprises an evaporator coupled to the injector valve for evaporating the precursor.

摘要翻译： 一种用于控制处理材料流到沉积室的装置和方法。 该装置包括设置在处理材料源和沉积室之间的喷射阀。 喷射器阀通过以预定的工作周期反复打开和关闭喷射器阀来控制前体材料的流动。 该装置还包括耦合到喷射器阀的蒸发器以蒸发前体。

公开(公告)号：US06365495B2

公开(公告)日：2002-04-02

申请号：US09248183

申请日：1999-02-09

申请人： Shulin Wang ,  Huan Luo ,  Keith K. Koai ,  Ming Xi ,  Mei Chang ,  Russell C. Ellwanger

发明人： Shulin Wang ,  Huan Luo ,  Keith K. Koai ,  Ming Xi ,  Mei Chang ,  Russell C. Ellwanger

IPC分类号： H01L2128

CPC分类号： H01L21/76862 ,  C23C16/0245 ,  C23C16/34 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76841 ,  H01L21/76864

摘要： A process for chemical vapor deposition of titanium nitride film using thermal decomposition of a metal-organic compound is disclosed. In particular, the deposition of titanium nitride film from tetrakis dimethylamino-titanium (TDMAT) is performed at a temperature preferably below 350° C. in the presence of helium and nitrogen. The process is performed at a total pressure of about 5 torr, a nitrogen dilutant gas flow of at least 500 sccm, preferably about 1000 sccm, and an edge purge gas flow of at least 500 sccm. These process parameters, coupled with an improved thermal conduction between the wafer and the heated pedestal, lead to a conformal deposition of titanium nitride film at a rate of at least 6 Å/sec.

摘要翻译： 公开了使用金属 - 有机化合物的热分解来进行氮化钛膜的化学气相沉积的方法。 特别地，在氦和氮的存在下，在优选低于350℃的温度下，从四二甲基氨基钛（TDMAT）沉积氮化钛膜。 该过程在约5托的总压力，至少500sccm，优选约1000sccm的氮稀释气流和至少500sccm的边缘吹扫气流中进行。 这些工艺参数与晶片和加热基座之间的改善的热传导相结合，导致以至少6埃/秒的速率的氮化钛膜的共形沉积。