摘要:
A method and apparatus for adjusting time delays in circuits with multiple operating supply voltages are disclosed. A voltage level detector and a delay means are coupled to a critical timing circuit of an integrated circuit capable of operating at multiple supply voltages. The voltage level detector detects a supply voltage at which the integrated circuit is operating. When the operating supply voltage of the integrated circuit changes from a first voltage level to a second voltage level, the voltage level detector sends a signal to the delay means and to a current enhancement circuit such that the delay means and current enhancement circuit can automatically modify the delay of the switching time of an output signal from the critical timing circuit.
摘要:
A voltage controlled oscillator (VCO) and phase-locked loop (PLL) topologies that allow for low-voltage, high frequency, low-jitter operation are disclosed. The conventional PLL design is modified so as to bifurcate the error signal into AC and DC components. A VCO accepting AC- and DC-component control inputs adjusts its output frequency in accordance with both inputs.
摘要:
A zero/one anticipator having an integrated sign selector is disclosed. A leading zeros string and a leading ones string are generated by examining carry propagates, generates, and kills of two adjacent bits of two input operands to an adder within a floating-point processor. The leading zeros string is for a positive sum, and the leading ones string is for a negative sum. A normalization shift amount is then determined from the leading zeros string and the leading ones string. A sign of a sum of the two input operands is then determined separately but concurrently with the normalization shift amount determination process. The sign is then utilized to select either the positive sum or the negative sum for a proper normalization shift amount.
摘要:
Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.
摘要:
A high-speed carry-lookahead binary adder is disclosed. The binary adder includes multiple rows of carry-lookahead circuits, a half-sum module, and a sum/carry module. A first carry-lookahead circuit row includes multiple eight-bit group generate circuits and multiple eight-bit group propagate circuits. Each of the eight-bit group generate circuits produces a generate signal for a corresponding bit location. Each of the eight-bit group propagate circuits produces a propagate signal for a corresponding bit location. The half-sum module is utilized to generate a half-sum signal. By utilizing the half-sum signal, the generate signals, and the propagate signals, the sum/carry module generates sum signals and a carry signal.
摘要:
Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.
摘要:
Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.
摘要:
A low latency fused multiply-adder for adding a product of a first binary number and a second binary number to a third binary number is disclosed. The low latency fused multiply-adder includes a partial product generation module, a partial product reduction module, and a carry propagate adder. The partial product generation module generates a set of partial products from the first binary number and the second binary number. Coupled to the partial product generation module, the partial product reduction module combines the set of partial products with the third binary number to produce a redundant Sum and a redundant Carry. Finally, the carry propagate adder adds the redundant Sum and the redundant Carry to yield a Sum Total.
摘要:
Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.
摘要:
A buffer, logic circuit, and data processing system employing fast turn-off drive circuitry for reducing leakage. Leakage current in logic circuitry is managed by coupling and decoupling the voltage potentials applied to large, high-leakage devices. Circuitry includes a low leakage logic path for holding logic states of an output after turning off high-leakage devices. A fast turn-off logic path in parallel with the low leakage logic path is used to assert each logic state in the forward direction from input to output. The large output device in each fast turn-off path is relieved of leakage stress by asserting logic states at driver inputs that cause the driver to turn OFF after the output logic state has been asserted.