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    High density plasma process chamber
    3.
    发明授权
    High density plasma process chamber 失效
    高密度等离子体处理室

    公开(公告)号：US6095084A

    公开(公告)日：2000-08-01

    申请号：US893599

    申请日：1997-07-14

    申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    IPC分类号： C23C16/00

    CPC分类号： C23C16/00

    摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.

    摘要翻译： 用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。 电感天线135用于从等离子体区域中的处理气体形成感应等离子体。 腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压 在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180​​将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度 ，在室55的等离子体区65中的高度方向性的等离子体。

    Time-based wafer de-chucking from an electrostatic chuck having separate RF bias and DC chucking electrodes
    4.
    发明申请
    Time-based wafer de-chucking from an electrostatic chuck having separate RF bias and DC chucking electrodes 有权
    从具有分离的RF偏压和DC夹持电极的静电卡盘的基于时间的晶片去卡夹

    公开(公告)号：US20090097185A1

    公开(公告)日：2009-04-16

    申请号：US11974502

    申请日：2007-10-11

    申请人： Steven C. Shannon ,  Michael G. Chafin ,  Dennis S. Grimard

    发明人： Steven C. Shannon ,  Michael G. Chafin ,  Dennis S. Grimard

    IPC分类号： H02N13/00

    CPC分类号： H02N13/00 ,  H01J37/32091 ,  H01J37/32174 ,  H01L21/6833 ,  H01L21/68742

    摘要： An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.

    摘要翻译： 反应器室中的静电卡盘具有与地绝缘的阴极电极，与阴极绝缘的夹持电极和覆盖夹持电极的提供工件支撑表面的电介质层。 夹紧电压供应装置连接到夹持电极。 RF发生器耦合到阴极电极。 电压感测装置耦合到夹持电极和阴极电极，以在处理结束时去除RF和DC电力之后，在放电期间监测它们之间的电压差。 电抗器包括一个控制器，其被编程为一旦电压感测装置同时在夹紧和阴极电极上检测相同的电压，就可以在电极放电期间升高升降管脚。

    Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes
    7.
    发明授权
    Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes 有权
    从具有分离的RF BIAS和DC夹持电极的静电卡盘的基于时间的晶片去卡夹

    公开(公告)号：US07813103B2

    公开(公告)日：2010-10-12

    申请号：US11974502

    申请日：2007-10-11

    申请人： Steven C. Shannon ,  Michael G. Chafin ,  Dennis S. Grimard

    发明人： Steven C. Shannon ,  Michael G. Chafin ,  Dennis S. Grimard

    IPC分类号： H02N13/00 ,  H01T23/00

    CPC分类号： H02N13/00 ,  H01J37/32091 ,  H01J37/32174 ,  H01L21/6833 ,  H01L21/68742

    摘要： An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.

    摘要翻译： 反应器室中的静电卡盘具有与地绝缘的阴极电极，与阴极绝缘的夹持电极和覆盖夹持电极的提供工件支撑表面的电介质层。 夹紧电压供应装置连接到夹持电极。 RF发生器耦合到阴极电极。 电压感测装置耦合到夹持电极和阴极电极，以在处理结束时去除RF和DC电力之后，在放电期间监测它们之间的电压差。 电抗器包括一个控制器，其被编程为一旦电压感测装置同时在夹紧和阴极电极上检测相同的电压，就可以在电极放电期间升高升降管脚。

    Plasma chamber support with coupled electrode
    8.
    发明授权
    Plasma chamber support with coupled electrode 有权
    具有耦合电极的等离子体室支撑

    公开(公告)号：US06494958B1

    公开(公告)日：2002-12-17

    申请号：US09607100

    申请日：2000-06-29

    申请人： Shamouil Shamouilian ,  Jon M. McChesney ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

    发明人： Shamouil Shamouilian ,  Jon M. McChesney ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

    IPC分类号： C23C1600

    CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/505

    摘要： A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a conductor 230 below the electrode 220. A voltage supply 180 supplies a gas energizing voltage to the conductor 220, and the conductor is adapted to capacitively couple the voltage to the electrode 220 to energize the process gas. Alternatively, the voltage may be supplied to the electrode 220 through a connector 195 which can capacitively couple with the conductor 230. A DC power supply 190 may also provide an electrostatic chucking voltage to the electrode 220. In one version, the conductor 230 comprises an interposer 280.

    摘要翻译： 能够处理处理气体的等离子体中的基板30的处理室110。 腔室110包括支撑件200，其具有覆盖电极220的电介质210和电极220下方的导体230.电压源180​​向导体220提供气体激励电压，并且导体适于将电压电容耦合到 电极220以使处理气体通电。 或者，电压可以通过能够与导体230电容耦合的连接器195提供给电极220.直流电源190还可以向电极220提供静电夹持电压。在一种形式中，导体230包括 插入器280。

    Chuck having pressurized zones of heat transfer gas
    9.
    发明授权
    Chuck having pressurized zones of heat transfer gas 有权
    夹头具有加热区的传热气体

    公开(公告)号：US06320736B1

    公开(公告)日：2001-11-20

    申请号：US09312909

    申请日：1999-05-17

    申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

    发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

    IPC分类号： H01H2300

    CPC分类号： H01L21/6831 ,  C23C16/4586

    摘要： A chuck 28 for holding a substrate 4 comprises a surface 27 capable of receiving the substrate 4, the surface 27 having a gas inlet port 40 and a gas exhaust port 42. A non-sealing protrusion is between the gas inlet port 40 and the gas exhaust port 42. The non-sealing protrusion 44 impedes the flow of heat transfer gas between the gas inlet port 40 and the gas exhaust port 42 without blocking the flow of heat transfer gas. Preferably, a sealing protrusion 46 is provided around the periphery of the chuck 28 to form a substantially gas-tight seal with the substrate 4 to enclose and prevent leakage of heat transfer gas into a surrounding chamber 6.

    摘要翻译： 用于保持基板4的卡盘28包括能够接收基板4的表面27，表面27具有气体入口40和排气口42.非密封突起在气体入口40和气体 排气口42.非密封突起44阻止气体入口40和排气口42之间的传热气体的流动，而不阻碍传热气体的流动。 优选地，密封突起46设置在卡盘28的周边周围，以与基底4形成基本上气密的密封，以封闭并防止传热气体泄漏到周围室6中。