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1.发明申请COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY 有权包含基础反应成分的组合物和光刻胶的方法公开(公告)号：US20120171626A1
公开(公告)日：2012-07-05
申请号：US13341067
申请日：2011-12-30
申请人： Deyan WANG , Shintaro Yamada , Cong Liu , Mingqi Li , Joon-Seok Oh , Chunyi Wu , Doris Kang , Cheng-Bai Xu
发明人： Deyan WANG , Shintaro Yamada , Cong Liu , Mingqi Li , Joon-Seok Oh , Chunyi Wu , Doris Kang , Cheng-Bai Xu
IPC分类号： G03F7/20
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/30
摘要： New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.
摘要翻译： 提供新的光致抗蚀剂组合物，其包含一种或多种具有碱反应性基团并且特别用于干式光刻的材料。 本发明的特别优选的光致抗蚀剂可以在抗蚀剂的涂层开发之后表现出减少的缺陷。
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2.发明申请公开(公告)号：US20120156595A1
公开(公告)日：2012-06-21
申请号：US13297261
申请日：2011-11-15
申请人： Joon-Seok OH , Deyan WANG , Cong LIU , Mingqi LI , Chunyi WU , Cheng-Bai XU
发明人： Joon-Seok OH , Deyan WANG , Cong LIU , Mingqi LI , Chunyi WU , Cheng-Bai XU
CPC分类号： G03F7/0392 , G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sugar substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种具有糖替代的材料。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。
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公开(公告)号：US20120129108A1
公开(公告)日：2012-05-24
申请号：US13296949
申请日：2011-11-15
申请人： Emad AQAD , Mingqi LI , Cheng-Bai XU , Deyan WANG , Cong LIU , Joon Seok OH , Shintaro YAMADA
发明人： Emad AQAD , Mingqi LI , Cheng-Bai XU , Deyan WANG , Cong LIU , Joon Seok OH , Shintaro YAMADA
IPC分类号： G03F7/20 , C08G75/00 , C07C309/19
CPC分类号： C07C381/12 , C07C63/72 , C07C303/32 , C07C309/04 , C07C309/06 , C07C309/08 , C07C309/12 , C07C309/17 , C07C309/19 , C07C309/20 , C07C309/23 , C07C309/24 , C07C2602/42 , C08F220/22 , C08F228/02 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/38
摘要： This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.
摘要翻译： 本发明涉及包含这些化合物的新的光酸产生剂化合物和光致抗蚀剂组合物。 特别地，本发明涉及包含可碱基裂解基团的光酸产生剂化合物。
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4.发明申请COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY 审中-公开包含基础反应成分的组合物和光刻胶的方法公开(公告)号：US20120122030A1
公开(公告)日：2012-05-17
申请号：US13297258
申请日：2011-11-15
申请人： Deyan WANG , Cong LIU , Mingqi LI , Joon Seok OH , Cheng-Bai XU , Doris H. KANG , Clark H. CUMMINS , Matthias S. OBER
发明人： Deyan WANG , Cong LIU , Mingqi LI , Joon Seok OH , Cheng-Bai XU , Doris H. KANG , Clark H. CUMMINS , Matthias S. OBER
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种包含一种或多种碱性反应性基团的材料，和（i）与碱性反应性基团不同的一种或多种极性基团，和/或（ii）至少一种碱性反应性基团是 非全氟化碱反应性基团。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。
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公开(公告)号：US20130065178A1
公开(公告)日：2013-03-14
申请号：US13602259
申请日：2012-09-03
申请人： Deyan WANG , Cheng-Bai Xu , George G. Barclay
发明人： Deyan WANG , Cheng-Bai Xu , George G. Barclay
CPC分类号： G03F7/2041 , C08F220/22 , C08F220/24 , C08F220/26 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0757 , H01L21/0274
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
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公开(公告)号：US20110255069A1
公开(公告)日：2011-10-20
申请号：US13170007
申请日：2011-06-27
申请人： Deyan WANG
发明人： Deyan WANG
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0047 , G03F7/0382 , G03F7/0757 , G03F7/0758 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种可与抗蚀剂的树脂组分基本上不可混合的材料。 本发明的另外优选的光致抗蚀剂组合物包括1）Si取代，2）氟取代; 3）超支化聚合物; 和/或4）聚合物颗粒。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。
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公开(公告)号：US20120264053A1
公开(公告)日：2012-10-18
申请号：US13445442
申请日：2012-04-12
申请人： Deyan WANG
发明人： Deyan WANG
IPC分类号： G03F7/20 , G03F7/11 , C09D133/16
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.
摘要翻译： 提供了在光致抗蚀剂组合物上施加的面漆层组合物。 该组合物特别适用于浸渍光刻加工。
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公开(公告)号：US20110143281A1
公开(公告)日：2011-06-16
申请号：US12858213
申请日：2010-08-17
CPC分类号： G03F7/11 , G03F7/0392 , G03F7/2041
摘要： In one aspect, the present invention relates to coating compositions that comprise a resin component, wherein the predominant portion of the resin component comprising one or more resins that are at least substantially free of fluorine. Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.
摘要翻译： 一方面，本发明涉及包含树脂组分的涂料组合物，其中树脂组分的主要部分包含至少基本上不含氟的一种或多种树脂。 本发明的涂料组合物可用作光致抗蚀剂外涂层，包括浸渍光刻加工。
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