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公开(公告)号：US08168536B2
公开(公告)日：2012-05-01
申请号：US12101744
申请日：2008-04-11
IPC分类号： H01L21/44
CPC分类号： H01L21/76897 , H01L29/41775 , H01L29/41783 , H01L29/66545
摘要： Metal contacts are self-positioned on a wafer of semiconductor product. Respective placement areas for a metal contact are determined by a selective deposition of a growth material over a region of the substrate surface (for example, through epitaxial growth). The growth material is surrounded by an insulating material. The grown material is then removed to form a void in the insulating material which coincides with the desired location of the metal contact. This removal of the grown material exposes the region on the substrate surface. Conductive material is then deposited to fill the void and thus form the metal contact directly with the region of the substrate surface.
摘要翻译： 金属触点自动定位在半导体产品的晶片上。 通过在衬底表面的区域上的生长材料的选择性沉积（例如，通过外延生长）来确定金属接触的相应放置区域。 生长材料被绝缘材料包围。 然后移除生长的材料以在绝缘材料中形成与金属接触件的期望位置重合的空隙。 这种去除生长的材料暴露在衬底表面上的区域。 然后沉积导电材料以填充空隙，从而直接与基底表面的区域形成金属接触。
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公开(公告)号：US20080254580A1
公开(公告)日：2008-10-16
申请号：US12101744
申请日：2008-04-11
IPC分类号： H01L21/8238 , C30B19/12
CPC分类号： H01L21/76897 , H01L29/41775 , H01L29/41783 , H01L29/66545
摘要： Metal contacts are self-positioned on a wafer of semiconductor product. Respective placement areas for a metal contact are determined by a selective deposition of a growth material over a region of the substrate surface (for example, through epitaxial growth). The growth material is surrounded by an insulating material. The grown material is then removed to form a void in the insulating material which coincides with the desired location of the metal contact. This removal of the grown material exposes the region on the substrate surface. Conductive material is then deposited to fill the void and thus form the metal contact directly with the region of the substrate surface.
摘要翻译： 金属触点自动定位在半导体产品的晶片上。 通过在衬底表面的区域上的生长材料的选择性沉积（例如，通过外延生长）来确定金属接触的相应放置区域。 生长材料被绝缘材料包围。 然后移除生长的材料以在绝缘材料中形成与金属接触件的期望位置重合的空隙。 这种去除生长的材料暴露在衬底表面上的区域。 然后沉积导电材料以填充空隙，从而直接与基底表面的区域形成金属接触。
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公开(公告)号：US20150115769A1
公开(公告)日：2015-04-30
申请号：US14232092
申请日：2012-07-09
CPC分类号： F03G7/06 , F03G7/065 , H01L41/1136 , H02N2/18 , H02N2/188
摘要： An assembly converting thermal energy into electrical energy including: at least one temperature sensitive bimetallic strip arranged in a space delimited by a hot source and a cold source facing each other, the bimetallic strip extending along a longitudinal axis; at least one suspended element fixed in movement to the sensitive element and extending laterally from the sensitive element and including a free end; and at least one piezoelectric element suspended from a part fixed relative to the sensitive element and vibrated by the suspended element such that it is vibrated when the bimetallic strip changes configuration and the suspended element comes into contact with the piezoelectric element, the piezoelectric element being located outside the space defined between the bimetallic strip and the hot source and outside the space between the bimetallic strip and the cold source.
摘要翻译： 一种将热能转换成电能的组件，包括：至少一个温度敏感的双金属条，布置在由热源和相互面对的冷源界定的空间中，双金属条沿着纵轴延伸; 固定在所述敏感元件上并且从所述敏感元件横向延伸并且包括自由端的至少一个悬挂元件; 以及至少一个压电元件，其从相对于所述敏感元件固定的部分悬挂并由所述悬挂元件振动，使得当所述双金属条改变构型并且所述悬挂元件与所述压电元件接触时，所述压电元件被振动，所述压电元件位于 在双金属条和热源之间限定的空间之外以及双金属条和冷源之间的空间之外。
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4.发明授权Producing a deformable system with a view to displacing an object enclosed in the latter 有权产生可变形系统，以便移动封闭在后者中的物体公开(公告)号：US08951458B2
公开(公告)日：2015-02-10
申请号：US13220288
申请日：2011-08-29
IPC分类号： B29C39/10
CPC分类号： B29C71/02 , G02B6/3512 , G02B6/3572 , G02B6/3576 , H01L51/055 , Y10T29/49002 , Y10T29/49908
摘要： The invention relates to a method for displacing an object in a solid system involving the following steps: placing the object in a matrix which is solid at a first temperature and capable of softening due to the effect of a temperature increase; if necessary, increasing the temperature until the matrix softens; applying an external action to the object so as to move it inside the matrix; lowering the temperature until the matrix solidifies.
摘要翻译： 本发明涉及一种用于置换固体系统中的物体的方法，包括以下步骤：将物体放置在第一温度下为固体并且由于温度升高的影响而能够软化的矩阵中; 如果需要，增加温度直到基体软化; 对对象施加外部动作，以将其移动到矩阵内部; 降低温度直到基体凝固。
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公开(公告)号：US20130256937A1
公开(公告)日：2013-10-03
申请号：US13990164
申请日：2011-12-05
IPC分类号： H01B13/00
CPC分类号： H01B13/00 , H01L51/0023 , H01L51/102
摘要： A method for producing a conductive area in a polymer material comprises: providing a polymer layer comprising conductive particles with a density such that the polymer layer is insulating, heating the polymer material to a temperature higher than or equal to the glass transition temperature of the polymer material, compressing a portion of the polymer layer using a stamp, in order to obtain a density of conductive particles such that the portion becomes conductive, and removing the stamp from the polymer layer.
摘要翻译： 用于在聚合物材料中制造导电区域的方法包括：提供包含导电颗粒的聚合物层，其密度使得聚合物层是绝缘的，将聚合物材料加热到高于或等于聚合物的玻璃化转变温度的温度 材料，使用印模压缩聚合物层的一部分，以获得导电颗粒的密度，使得该部分变得导电，以及从聚合物层去除印模。
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6.发明授权Method for manufacturing a transistor with parallel semiconductor nanofingers 有权制造具有并联半导体纳米装置的晶体管的方法公开(公告)号：US08460978B2
公开(公告)日：2013-06-11
申请号：US12063288
申请日：2006-08-07
申请人： Philippe Coronel , Jessy Bustos , Romain Wacquez
发明人： Philippe Coronel , Jessy Bustos , Romain Wacquez
CPC分类号： H01L29/785 , H01L29/42392 , H01L29/66772
摘要： A method of producing a transistor having parallel semiconductor nanofingers. The method includes: forming a monocrystalline layer of a semiconductor material on a layer of a subjacent material which can be selectively etched in relation to the monocrystalline layer; etching parallel partitions in the monocrystalline layer and in the subjacent layer and continuing said etching operation in order to hollow out part of the subjacent layer of material; filling the gap between the partitions and the hollowed-out part with a first insulating material; defining a central part of the partitions and removing the first insulating material from around the central part of the monocrystalline layer, thereby forming a finger of semiconductor material; and filling and coating the central part with a conductor material.
摘要翻译： 一种制造具有并联半导体纳米装置的晶体管的方法。 该方法包括：在可以相对于单晶层选择性地蚀刻的下层材料层上形成半导体材料的单晶层; 蚀刻单晶层和下层中的平行隔板，并继续进行所述蚀刻操作，以便中断部分下层材料; 用第一绝缘材料填充隔板和中空部分之间的间隙; 限定隔板的中心部分，并且从单晶层的中心部分周围去除第一绝缘材料，从而形成半导体材料的手指; 并用导体材料填充和涂覆中心部分。
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7.发明申请公开(公告)号：US20130100985A1
公开(公告)日：2013-04-25
申请号：US13696239
申请日：2011-05-03
IPC分类号： G01K7/02
摘要： The thermoelectric device includes a first leg made from a first material, anchored at the level of its first end to a support, and a second leg made from a second material, anchored at the level of its first end to said support. In addition, an electric connecting element provided with first and second contact areas is respectively in electric contact with the first leg and second leg so as to form a thermocouple. The device includes means for varying the position of the first and contact areas at the level of the first and second legs.
摘要翻译： 该热电装置包括由第一材料制成的第一支脚，该第一支架在其第一端的水平位置处固定到支撑件，以及由第二材料制成的第二支柱，其在其第一端的水平位置处固定到所述支撑件。 此外，设置有第一和第二接触区域的电连接元件分别与第一腿部和第二腿部电接触，以形成热电偶。 该装置包括用于改变第一和第二腿的水平处的第一和接触区域的位置的装置。
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8.发明授权Method for producing field effect transistors with a back gate and semiconductor device 有权用背栅极和半导体器件制造场效晶体管的方法公开(公告)号：US08383464B2
公开(公告)日：2013-02-26
申请号：US12941562
申请日：2010-11-08
IPC分类号： H01L21/00
CPC分类号： H01L21/84 , H01L21/76283 , H01L21/764 , H01L29/78648 , H01L2924/0002 , H01L2924/00
摘要： The method for producing a field effect transistor on a substrate comprising a support layer, a sacrificial layer and a semi-conducting layer comprises forming an active area in the semi-conducting layer. The active area is delineated by a closed peripheral insulation pattern and comprises an additional pattern made from insulating material. The method also comprises etching the insulating material of the additional pattern to access the sacrificial layer, etching the sacrificial layer resulting in formation of a first cavity, forming a dielectric layer on a top wall of the first cavity, and depositing an electrically conducting layer in the first cavity. The closed peripheral insulation pattern is formed through the semi-conducting layer and the sacrificial layer.
摘要翻译： 在包括支撑层，牺牲层和半导体层的衬底上制造场效应晶体管的方法包括在半导电层中形成有源区。 有源区域由封闭的外围绝缘图案描绘并且包括由绝缘材料制成的附加图案。 该方法还包括蚀刻附加图案的绝缘材料以进入牺牲层，蚀刻牺牲层，从而形成第一腔，在第一腔的顶壁上形成电介质层，并将导电层沉积在 第一个腔。 封闭的外围绝缘图案通过半导体层和牺牲层形成。
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公开(公告)号：US20120292183A1
公开(公告)日：2012-11-22
申请号：US13575282
申请日：2011-01-20
IPC分类号： G01N27/411 , G01N27/417
CPC分类号： G01N27/4162 , H01M8/04492 , H01M8/1007
摘要： A water detection device comprising at least one fuel cell comprising a first electrode, a layer of electrolyte, a second electrode and an electrical measurement device characterized in that the first electrode of the cell is in contact with a first face of a porous silicon substrate comprising Si—H bonds, in such a manner as to liberate a flow of hydrogen in the presence of water. Advantageously, the substrate of porous silicon is incorporated into a first housing permeable to water, the fuel cell being incorporated into a second housing said second housing being impermeable to water and permeable to oxygen.
摘要翻译： 一种水检测装置，包括至少一个包括第一电极，电解质层，第二电极和电测量装置的燃料电池，其特征在于，电池的第一电极与多孔硅衬底的第一面接触，包括 Si-H键，以在存在水的情况下释放出氢气流。 有利地，多孔硅的基底结合到可渗透水的第一壳体中，燃料电池结合到第二壳体中，所述第二壳体不透水并且可透氧。
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10.发明授权Method for forming under a thin layer of a first material portions of another material and/or empty areas 有权用于在另一材料和/或空区域的第一材料部分的薄层下形成的方法公开(公告)号：US08252638B2
公开(公告)日：2012-08-28
申请号：US11712353
申请日：2007-02-28
申请人： Philippe Coronel , Yves Laplanche , Laurent Pain
发明人： Philippe Coronel , Yves Laplanche , Laurent Pain
IPC分类号： H01L21/84 , H01L29/786
CPC分类号： H01L29/66772 , H01L21/0277 , H01L21/7682 , H01L29/42384 , H01L29/42392 , H01L29/78654
摘要： A method for forming an empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.
摘要翻译： 一种用于在给定材料的层下形成空区域的方法，包括在基底上形成感光层和给定材料层的堆叠; 根据所述感光层是正或负的，电子束穿过所述给定材料的层，使所述感光层或其互补体的一部分粘合; 并去除感光层的一部分。
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