Method and acoustic signal processing system for interference and noise suppression in binaural microphone configurations
    2.
    发明授权
    Method and acoustic signal processing system for interference and noise suppression in binaural microphone configurations 有权
    用于双耳麦克风配置中的干扰和噪声抑制的方法和声信号处理系统

    公开(公告)号:US08909523B2

    公开(公告)日:2014-12-09

    申请号:US13154738

    申请日:2011-06-07

    摘要: A method determines a bias reduced noise and interference estimation in a binaural microphone configuration with a right and a left microphone signal at a time-frame with a target speaker active. The method includes a determination of the auto power spectral density estimate of the common noise formed of noise and interference components of the right and left microphone signals and a modification of the auto power spectral density estimate of the common noise by using an estimate of the magnitude squared coherence of the noise and interference components contained in the right and left microphone signals determined at a time frame without a target speaker active. An acoustic signal processing system and a hearing aid implement the method for determining the bias reduced noise and interference estimation. The noise reduction performance of speech enhancement algorithms is improved by the invention. Further, distortions of the target speech signal and residual noise and interference components are reduced.

    摘要翻译: 一种方法确定双耳麦克风配置中的偏压降低的噪声和干扰估计,其中在与目标扬声器有效的时间帧上具有右麦克风信号和左麦克风信号。 该方法包括确定由右和左麦克风信号的噪声和干扰分量形成的公共噪声的自动功率谱密度估计,以及通过使用幅度的估计修改公共噪声的自动功率谱密度估计 在没有目标扬声器有效的时间帧确定的左和右麦克风信号中包含的噪声和干扰分量的平方相干性。 声信号处理系统和助听器实现用于确定偏差降低的噪声和干扰估计的方法。 本发明改进了语音增强算法的降噪性能。 此外,减少了目标语音信号的失真和残余噪声和干扰分量。

    Metal semiconductor diode
    3.
    发明授权
    Metal semiconductor diode 失效
    金属半导体二极管

    公开(公告)号:US4009481A

    公开(公告)日:1977-02-22

    申请号:US281162

    申请日:1972-08-16

    申请人: Klaus Reindl

    发明人: Klaus Reindl

    摘要: A metal semiconductor diode with a first insulating layer, arranged on a semiconductor body and provided with a first contact window, a second insulating layer, which is thinner than the first insulating layer, has a second contact window which is smaller than the first contact window. The second insulating layer covers the edge of the surface of the semiconductor body which emerges through the first contact window and contact metal is provided in the first and in the second contact window.

    摘要翻译: 具有第一绝缘层的金属半导体二极管,其布置在半导体本体上并且设置有第一接触窗口,第二绝缘层比第一绝缘层更薄,具有比第一接触窗口小的第二接触窗口 。 第二绝缘层覆盖通过第一接触窗露出的半导体本体的表面的边缘,并且接触金属设置在第一接触窗口和第二接触窗口中。