Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection
    1.
    发明授权
    Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection 失效
    通过非接触式去镀层和端点检测来控制半导体晶片上的金属层的平面化

    公开(公告)号:US06720263B2

    公开(公告)日:2004-04-13

    申请号:US09981505

    申请日:2001-10-16

    IPC分类号: H01L21302

    摘要: A non-contact apparatus and method for removing a metal layer from a substrate are provided. The apparatus includes a rotatable anode substrate support member configured to support a substrate in a face-up position and to electrically contact the substrate positioned thereon. A pivotally mounted cathode fluid dispensing nozzle assembly positioned above the anode substrate support member is also provided. A power supply in electrical communication with the anode substrate support member and the cathode fluid dispensing nozzle is provided, and a system controller configured to regulate at least one of a rate of rotation of the anode substrate support member, a radial position of the cathode fluid dispensing nozzle, and an output power of the power supply is provided. The method provides for the removal of a metal layer from a substrate by rotating the substrate in a face up position on a rotatable substrate support member. A cathode fluid dispensing nozzle is positioned over a central portion of the substrate and a metal removing solution is dispensed from the cathode fluid dispensing nozzle onto the central portion of the substrate. An electrical bias is applied between the substrate and the cathode fluid dispensing nozzle, which operates to deplate the metal layer below the fluid dispensing nozzle.

    摘要翻译: 提供了一种用于从基板去除金属层的非接触式设备和方法。 该装置包括可旋转的阳极基板支撑构件,其构造成将基板支撑在面朝上的位置并且电接触定位在其上的基板。 还提供了一种位于阳极基板支撑构件上方的枢转安装的阴极流体分配喷嘴组件。 提供与阳极基板支撑构件和阴极流体分配喷嘴电连通的电源,以及系统控制器,被配置为调节阳极基板支撑构件的旋转速率,阴极流体的径向位置 分配喷嘴,并且提供电源的输出功率。 该方法通过在可旋转的基板支撑构件上面向上的位置旋转基板来提供从基板移除金属层。 阴极流体分配喷嘴位于衬底的中心部分上方,金属去除溶液从阴极流体分配喷嘴分配到衬底的中心部分上。 在衬底和阴极流体分配喷嘴之间施加电偏压,其用于使流体分配喷嘴下方的金属层脱落。

    Electroless deposition apparatus
    2.
    发明授权

    公开(公告)号:US07138014B2

    公开(公告)日:2006-11-21

    申请号:US10059572

    申请日:2002-01-28

    IPC分类号: C23C14/00 B05C11/00 B05C3/00

    摘要: An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

    Polymetal hydroxychloride processes and compositions: enhanced efficacy antiperspirant salt compositions
    5.
    发明授权
    Polymetal hydroxychloride processes and compositions: enhanced efficacy antiperspirant salt compositions 有权
    多金属羟氯化物方法和组合物:增强功效止汗剂盐组合物

    公开(公告)号:US08801909B2

    公开(公告)日:2014-08-12

    申请号:US11619478

    申请日:2007-01-03

    IPC分类号: B01D61/46

    摘要: The invention describes processes for the production of basic aluminum compounds, including aluminum chlorohydrate, basic zirconium compounds, and basic aluminum zirconium compounds. The process produces products of a wide range of basicities. The products formed by the present invention are comprised of low molecular weight species characteristic of enhanced efficacy antiperspirant salt compositions. The products of this process are suitable for use as water purification agents, as binders in catalyst applications, and in antiperspirant applications. In addition, the invention is directed to the products made by the disclosed process.

    摘要翻译: 本发明描述了生产碱性铝化合物的方法,包括氯化铝水合物,碱性锆化合物和碱性锆锆化合物。 该过程产生广泛基础的产品。 由本发明形成的产品由具有增强的功效止汗剂盐组合物特征的低分子量物质组成。 该方法的产品适用于作为水净化剂,作为催化剂应用中的粘合剂和止汗剂应用。 此外,本发明涉及通过公开的方法制造的产品。

    Apparatus and method for rinsing substrates
    6.
    发明授权
    Apparatus and method for rinsing substrates 失效
    用于漂洗底物的装置和方法

    公开(公告)号:US06742279B2

    公开(公告)日:2004-06-01

    申请号:US10052015

    申请日:2002-01-16

    IPC分类号: F26B508

    CPC分类号: H01L21/67028 Y10S134/902

    摘要: Embodiments of the invention provide a spin rinse dry (SRD) chamber for a semiconductor processing system. The SRD chamber includes a selectively rotatable substrate support member having an upper substrate receiving surface formed thereon, and a selectively rotatable shield member positioned above the upper substrate receiving surface, the rotatable shield member having a substantially planar lower surface that may be selectively positioned proximate the upper substrate. Embodiments of the invention further provide a method for rinsing semiconductor substrates, including the steps of positioning the substrate on a substrate support member, positioning a shield member having a substantially planar lower surface in a processing position above the substrate such that the substantially planar lower surface is in parallel orientation with an upper surface of the substrate, and flowing a fluid solution into a processing region defined by the upper surface of the substrate and the substantially planar lower surface via a fluid aperture in the substantially planar lower surface.

    摘要翻译: 本发明的实施例提供了一种用于半导体处理系统的旋转冲洗干燥(SRD)室。 SRD室包括一个有选择地旋转的基板支撑件,其具有形成在其上的上基板接收表面,以及位于上基板接收表面上方的可选择地旋转的屏蔽件,该可旋转屏蔽件具有基本平坦的下表面, 上基板。 本发明的实施例还提供了一种用于冲洗半导体衬底的方法,包括以下步骤:将衬底定位在衬底支撑构件上,将具有基本平坦的下表面的屏蔽构件定位在衬底上方的处理位置,使得基本平坦的下表面 与基底的上表面平行取向,并且使流体溶液经由基本平坦的下表面中的流体孔流动到由基底的上表面和基本上平坦的下表面限定的处理区域中。

    Polyaluminum chloride and aluminum chlorohydrate, processes and compositions: high-basicity and ultra high-basicity products
    10.
    发明授权
    Polyaluminum chloride and aluminum chlorohydrate, processes and compositions: high-basicity and ultra high-basicity products 有权
    聚氯化铝和氯化铝水合物,工艺和组成:高碱度和超高碱度的产品

    公开(公告)号:US07846318B2

    公开(公告)日:2010-12-07

    申请号:US11619483

    申请日:2007-01-03

    摘要: The invention relates generally to processes for the production of high-basicity and ultra-high basicity polyaluminum chlorides including aluminum chlorohydrate. The processes can produce products of a wide range of basicities and are particularly useful in producing high basicity products. The process can produce a wide range of solution concentrations and are particularly useful in producing high solution concentrations. The processes described generate high purity products, which are free of by-product salt(s). The processes described herein can also be utilized to produce enhanced efficacy polyaluminum chlorides including aluminum chlorohydrate. When compared to conventional processes for manufacturing these compounds the processes disclosed herein are unique in so far as the disclosed processes do not require aluminum metal as a starting material. The products of the processes are suitable in applications including water purification, catalysts, and antiperspirants. In addition, the invention is directed to the products prepared by the processes described herein.

    摘要翻译: 本发明一般涉及生产包括氯化铝水合物在内的高碱度和超高碱性聚氯化铝的方法。 该工艺可生产各种碱性产品,特别适用于生产高碱度产品。 该方法可产生大范围的溶液浓度,特别适用于生产高溶液浓度。 所述方法产生不含副产物盐的高纯度产物。 本文所述的方法也可用于产生包括氯化铝水合物的增强效力的聚氯化铝。 与用于制造这些化合物的常规方法相比,本文公开的方法是独特的,只要所公开的方法不需要铝金属作为起始材料即可。 该方法的产品适用于包括水净化,催化剂和止汗剂在内的应用。 此外,本发明涉及通过本文所述方法制备的产品。