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公开(公告)号：US07005046B2
公开(公告)日：2006-02-28
申请号：US10217872
申请日：2002-08-13
申请人： Joseph J. Stevens , Yevgeniy Rabinovich , Sandy S. Chao , Mark R. Denome , Allen L. D'Ambra , Donald J. Olgado
发明人： Joseph J. Stevens , Yevgeniy Rabinovich , Sandy S. Chao , Mark R. Denome , Allen L. D'Ambra , Donald J. Olgado
IPC分类号： C25D17/00
CPC分类号： C25D21/14 , C25D7/123 , C25D17/001 , C25D21/18
摘要： A system is provided in which a smaller flow of deposition solution is diverted from a larger flow of deposition solution flowing on an electrochemical deposition tool platform. The smaller flow is diverted to a dosing unit which may be on a separate platform. The dosing unit in one embodiment comprises a pressurized flow line.
摘要翻译： 提供了一种系统，其中较小的沉积溶液流从在电化学沉积工具平台上流动的较大流动的沉积溶液转移。 较小的流量被转移到可以在单独平台上的计量单元。 在一个实施例中的计量单元包括加压流动管线。
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公开(公告)号：US06454927B1
公开(公告)日：2002-09-24
申请号：US09603791
申请日：2000-06-26
申请人： Joseph J. Stevens , Yevgeniy Rabinovich , Sandy S. Chao , Mark R. Denome , Allen L. D'Ambra , Donald J. Olgado
发明人： Joseph J. Stevens , Yevgeniy Rabinovich , Sandy S. Chao , Mark R. Denome , Allen L. D'Ambra , Donald J. Olgado
IPC分类号： C25B1500
CPC分类号： C25D21/14 , C25D7/123 , C25D17/001 , C25D21/18
摘要： A system is provided in which a smaller flow of deposition solution is diverted from a larger flow of deposition solution flowing on an electro-chemical deposition tool platform. The smaller flow is diverted to a dosing unit which may be on a separate platform. The dosing unit in one embodiment comprises a pressurized flow line.
摘要翻译： 提供了一种系统，其中较小的沉积溶液流从在电化学沉积工具平台上流动的较大流动的沉积溶液转移。 较小的流量被转移到可以在单独平台上的计量单元。 在一个实施例中的计量单元包括加压流动管线。
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公开(公告)号：US07155319B2
公开(公告)日：2006-12-26
申请号：US11064747
申请日：2005-02-23
申请人： Roy C. Nangoy , Allen L. D'Ambra , Yevgeniy Rabinovich , David Z. Chen , Tao Li
发明人： Roy C. Nangoy , Allen L. D'Ambra , Yevgeniy Rabinovich , David Z. Chen , Tao Li
CPC分类号： G05B13/021 , Y10T137/0324 , Y10T137/0352 , Y10T137/0357 , Y10T137/0363
摘要： A method for controlling liquid delivery in a processing chamber. The method includes generating an analog input (AI) signal proportional to a process variable and calculating an analog output (AO) signal based on a setpoint and a deadband. The setpoint is a target value of the process variable and the deadband is an allowable tolerance around the setpoint that determines when the control logic is activated to control the process variable. The method further includes transmitting the AO signal to a control device and adjusting the process variable proportional to the value of the AO signal.
摘要翻译： 一种用于控制处理室中的液体输送的方法。 该方法包括产生与过程变量成比例的模拟输入（AI）信号，并且基于设定点和死区计算模拟输出（AO）信号。 设定值是过程变量的目标值，死区是设定值周围的允许公差，用于确定控制逻辑何时被激活以控制过程变量。 该方法还包括将AO信号发送到控制装置并且调整与AO信号的值成比例的过程变量。
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公开(公告)号：US07223323B2
公开(公告)日：2007-05-29
申请号：US10616284
申请日：2003-07-08
申请人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
发明人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
CPC分类号： H01L21/6719 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , B08B3/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6715 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译： 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。
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公开(公告)号：US08127713B2
公开(公告)日：2012-03-06
申请号：US12334156
申请日：2008-12-12
IPC分类号： B05C11/00
CPC分类号： H01L21/6719 , G03F7/162 , H01L21/67051 , H01L21/68771 , Y10T29/41
摘要： An apparatus for dispensing fluid during semiconductor substrate processing operations comprises an enclosure having a first side and a second side. The enclosure comprises a first processing station and a second processing station. The second processing station is positioned adjacent to the first processing station. In addition, the substrate processing apparatus includes a first dispense arm configured to deliver a fluid to the first processing station wherein the first dispense arm is positioned between the first side and the first processing station and a second dispense arm configured to deliver the fluid to the second processing station wherein the second dispense arm is positioned between the second side and the second processing station. The substrate processing apparatus also comprises a first rinse arm configured to deliver a rinsing fluid to the first processing station and a second rinse arm configured to deliver the rinsing fluid to the second processing station.
摘要翻译： 在半导体衬底处理操作期间用于分配流体的设备包括具有第一侧和第二侧的外壳。 外壳包括第一处理站和第二处理站。 第二处理站位于第一处理站附近。 此外，基板处理装置包括：第一分配臂，被配置为将流体输送到第一处理站，其中第一分配臂位于第一侧和第一处理站之间，第二分配臂被配置为将流体输送到 第二处理站，其中第二分配臂位于第二侧和第二处理站之间。 衬底处理设备还包括构造成将冲洗流体输送到第一处理站的第一冲洗臂和被构造成将冲洗流体输送到第二处理站的第二冲洗臂。
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6.发明申请System and methods for measuring chemical concentrations of a plating solution 有权用于测量电镀溶液化学浓度的系统和方法公开(公告)号：US20070026529A1
公开(公告)日：2007-02-01
申请号：US11189368
申请日：2005-07-26
IPC分类号： G01N27/00
CPC分类号： C25D17/001 , C25D21/12 , Y10T436/118339 , Y10T436/2575
摘要： An electrochemical plating system, which includes one or more plating cell reservoirs for storing plating solution and a chemical analyzer in fluidic communication with the one or more plating cell reservoirs. The chemical analyzer is configured to measure chemical concentrations of the plating solution. The plating system further includes a plumbing system configured to facilitate the fluidic communication between the one or more plating cell reservoirs and the chemical analyzer and to substantially isolate the chemical analyzer from electrical noise generated by one or more plating cells of the one or more plating cell reservoirs.
摘要翻译： 一种电化学电镀系统，其包括用于存储电镀溶液的一个或多个电镀槽储存器和与所述一个或多个电镀池储存器流体连通的化学分析器。 化学分析仪被配置为测量电镀溶液的化学浓度。 电镀系统还包括管道系统，其配置为便于一个或多个电镀槽储存器与化学分析器之间的流体连通，并且使化学分析器与由一个或多个电镀单元的一个或多个电镀单元产生的电气噪声基本隔离 水库
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7.发明授权公开(公告)号：US07851222B2
公开(公告)日：2010-12-14
申请号：US11189368
申请日：2005-07-26
IPC分类号： G01N35/08
CPC分类号： C25D17/001 , C25D21/12 , Y10T436/118339 , Y10T436/2575
摘要： An electrochemical plating system, which includes one or more plating cell reservoirs for storing plating solution and a chemical analyzer in fluidic communication with the one or more plating cell reservoirs. The chemical analyzer is configured to measure chemical concentrations of the plating solution. The plating system further includes a plumbing system configured to facilitate the fluidic communication between the one or more plating cell reservoirs and the chemical analyzer and to substantially isolate the chemical analyzer from electrical noise generated by one or more plating cells of the one or more plating cell reservoirs.
摘要翻译： 一种电化学电镀系统，其包括用于存储电镀溶液的一个或多个电镀槽储存器和与所述一个或多个电镀池储存器流体连通的化学分析器。 化学分析仪被配置为测量电镀溶液的化学浓度。 电镀系统还包括管道系统，其配置为便于一个或多个电镀槽储存器与化学分析器之间的流体连通，并且使化学分析器与由一个或多个电镀单元的一个或多个电镀单元产生的电气噪声基本隔离 水库
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8.发明申请公开(公告)号：US20070089990A1
公开(公告)日：2007-04-26
申请号：US11255855
申请日：2005-10-20
IPC分类号： C25D21/18
CPC分类号： C25D21/18 , C25D21/14 , H01L21/2885
摘要： A method and apparatus for supplying a dose to an electrolyte solution including measuring the time after adding fresh solution, measuring the Amp-hours after adding fresh solution, measuring the number of substrates processed by the solution, calculating the volume of a dose to supply to the solution based on the time, Amp-hours, and number of substrates processed, and adding the dose to the solution.
摘要翻译： 一种用于向电解质溶液供应剂量的方法和装置，包括在添加新鲜溶液后测量时间，在加入新鲜溶液后测量安培小时，测量由溶液处理的底物数量，计算供给量的剂量 基于时间的解决方案，安培小时数和处理的底物数量，并向溶液中加入剂量。
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公开(公告)号：US20060190099A1
公开(公告)日：2006-08-24
申请号：US11064747
申请日：2005-02-23
申请人： Roy Nangoy , Allen D'Ambra , Yevgeniy Rabinovich , David Chen , Tao Li
发明人： Roy Nangoy , Allen D'Ambra , Yevgeniy Rabinovich , David Chen , Tao Li
IPC分类号： G05B13/02
CPC分类号： G05B13/021 , Y10T137/0324 , Y10T137/0352 , Y10T137/0357 , Y10T137/0363
摘要： A method for controlling liquid delivery in a processing chamber. The method includes generating an analog input (AI) signal proportional to a process variable and calculating an analog output (AO) signal based on a setpoint and a deadband. The setpoint is a target value of the process variable and the deadband is an allowable tolerance around the setpoint that determines when the control logic is activated to control the process variable. The method further includes transmitting the AO signal to a control device and adjusting the process variable proportional to the value of the AO signal.
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公开(公告)号：US20050056538A1
公开(公告)日：2005-03-17
申请号：US10664277
申请日：2003-09-17
IPC分类号： B01D61/44 , B01D71/36 , C25D3/38 , C25D7/12 , C25D17/00 , C25D17/02 , C25D17/10 , C25D17/12 , C25D21/00 , C25D21/18 , C25B9/00
摘要： A method and apparatus for plating a metal onto a substrate. The apparatus includes a fluid basin configured to contain a plating solution, an anode fluid volume positioned in a lower portion of the fluid basin, a cathode fluid volume positioned in an upper portion of the fluid basin, an ionic membrane positioned to separate the anode fluid volume from the cathode fluid volume, a plating electrode centrally positioned in the anode fluid volume, and a deplating electrode positioned adjacent the plating electrode in the anode fluid volume.
摘要翻译： 一种用于将金属电镀到基底上的方法和装置。 该装置包括流体池，其构造成容纳镀液，位于流体槽的下部的阳极流体体积，位于流体池的上部的阴极流体体积，定位成将阳极流体分离的离子膜 来自阴极流体体积的体积，位于阳极流体体积中心的电镀电极，以及位于阳极流体体积内的电镀电极附近的脱镀电极。
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