公开(公告)号：US09142719B2

公开(公告)日：2015-09-22

申请号：US13242414

申请日：2011-09-23

申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Ting Lin

发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Ting Lin

IPC分类号： H01L21/02 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007

摘要： A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed.

摘要翻译： 用于外延形成发光二极管的图案化衬底包括：顶表面; 多个间隔开的凹部，每个凹槽从顶表面向下凹入，每个凹槽由凹口限定壁限​​定，凹口限定壁具有底壁面和围绕壁面延伸的周围壁面 底壁面向上表面; 以及多个突起，每个突起从相应的一个凹部的凹陷限定壁的底壁面向上突出。 还公开了具有图案化衬底的发光二极管。

公开(公告)号：US09391235B2

公开(公告)日：2016-07-12

申请号：US13299784

申请日：2011-11-18

申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Ting Lin

发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Ting Lin

IPC分类号： B32B3/30 ,  H01L33/20 ,  C30B25/18 ,  C30B29/40 ,  C30B25/04 ,  C30B29/60

CPC分类号： H01L33/20 ,  C30B25/04 ,  C30B25/18 ,  C30B29/406 ,  C30B29/60 ,  Y10T428/24479

摘要： A patterned substrate for epitaxially growing a semiconductor material includes: a top surface; and a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and is defined by n crystal planes, n being an integer not less than 3. Each of the crystal planes has an upper edge meeting the top surface and is adapted for epitaxially growing the semiconductor material. A maximum distance from one of the upper edges of one of the recesses to an adjacent one of the upper edges of an adjacent one of the recesses is not greater than 500 nm.

摘要翻译： 用于外延生长半导体材料的图案化衬底包括：顶表面; 以及多个间隔开的凹部，每个凹部从上表面向下凹入并由n个晶面限定，n为不小于3的整数。每个晶面具有满足顶表面的上边缘，并且是 适于外延生长半导体材料。 从一个凹部的一个上边缘到相邻的一个凹槽的相邻一个上边缘的最大距离不大于500nm。

公开(公告)号：US20120074453A1

公开(公告)日：2012-03-29

申请号：US13242414

申请日：2011-09-23

申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Ting Lin

发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Ting Lin

IPC分类号： H01L33/36 ,  H01L29/04

CPC分类号： H01L33/20 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007

摘要： A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed.

摘要翻译： 用于外延形成发光二极管的图案化衬底包括：顶表面; 多个间隔开的凹部，每个凹槽从顶表面向下凹入，每个凹槽由凹口限定壁限​​定，凹口限定壁具有底壁面和围绕壁面延伸的周围壁面 底壁面向上表面; 以及多个突起，每个突起从相应的一个凹部的凹陷限定壁的底壁面向上突出。 还公开了具有图案化衬底的发光二极管。

公开(公告)号：US08895332B2

公开(公告)日：2014-11-25

申请号：US12701336

申请日：2010-02-05

申请人： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

发明人： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/44

摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

摘要翻译： 本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及 一对用于向外延层结构提供电源的电极。 外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。 因此外延层结构产生的光被有效地抽出。 形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。 朝向基板的光更有效地向上反射。 因此光提取和亮度增强。 还提供了用于制造本发明的发光二极管芯片的方法。

公开(公告)号：US08785947B2

公开(公告)日：2014-07-22

申请号：US12648012

申请日：2009-12-28

申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Chia-Cheng Wu ,  Po-Rung Lin

发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Chia-Cheng Wu ,  Po-Rung Lin

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L21/02491 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22

摘要： A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.

摘要翻译： 半导体衬底包括：基底层; 牺牲层，其形成在基底层上并且包括多个间隔的牺牲膜区域和多个第一通道，每个第一通道限定在两个相邻的牺牲膜区域之间。 每个牺牲膜区域具有多个纳米结构和在纳米结构之间限定的多个第二通道。 第二通道与第一通道空间通信，并且具有小于第一通道的宽度的宽度。 外延层设置在牺牲层上。

公开(公告)号：US08680554B2

公开(公告)日：2014-03-25

申请号：US13331530

申请日：2011-12-20

申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Tsung-Yen Tsai

发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Tsung-Yen Tsai

IPC分类号： H01L21/02

CPC分类号： H01L21/02002 ,  H01L21/02483 ,  H01L21/0254 ,  H01L33/0079

摘要： A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.

摘要翻译： 制造外延结构的方法包括：（a）在临时衬底上提供牺牲层，所述牺牲层由氧化镓制成; 和（b）在牺牲层上外延生长外延层单元。

公开(公告)号：US08624262B2

公开(公告)日：2014-01-07

申请号：US12903852

申请日：2010-10-13

申请人： Ray-Hua Horng ,  Dong-Sing Wuu

发明人： Ray-Hua Horng ,  Dong-Sing Wuu

IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.

摘要翻译： 发光二极管包括：具有反射顶表面的导电永久性基板; 外延膜设置在永久性基板的反射上表面上，具有与上表面相对的上表面和粗糙化的下表面，粗糙化的下表面具有不小于300nm的高度的粗糙度和多个 与反射顶表面欧姆接触的峰; 填充在下表面和反射顶表面之间的间隙中并将外延膜连接到永久基板的光学粘合剂; 以及设置在上表面上并与外延膜欧姆接触的顶电极。

公开(公告)号：US20120168914A1

公开(公告)日：2012-07-05

申请号：US13331530

申请日：2011-12-20

申请人： Dong-Sing WUU ,  Ray-Hua Horng ,  Tsung-Yen Tsai

发明人： Dong-Sing WUU ,  Ray-Hua Horng ,  Tsung-Yen Tsai

IPC分类号： H01L21/20 ,  H01L29/06

CPC分类号： H01L21/02002 ,  H01L21/02483 ,  H01L21/0254 ,  H01L33/0079

摘要： A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.

摘要翻译： 制造外延结构的方法包括：（a）在临时衬底上提供牺牲层，所述牺牲层由氧化镓制成; 和（b）在牺牲层上外延生长外延层单元。

公开(公告)号：US08076689B2

公开(公告)日：2011-12-13

申请号：US12540635

申请日：2009-08-13

申请人： Ray-Hua Horng ,  Dong-Sing Wuu

发明人： Ray-Hua Horng ,  Dong-Sing Wuu

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A light emitting diode includes an epitaxial layer, an electrode, electrically conductive members, a light incident layer, a light reflecting layer, an adhesive, and an electrically conductive permanent substrate. The epitaxial layer has first and second surfaces. The electrode is disposed on the second surface of the epitaxial layer. The electrically conductive members are formed on the first surface of the epitaxial layer and are spaced apart from each other. The light incident layer is formed on the first surface of the epitaxial layer at regions where none of the electrically conductive members are formed. The light reflecting layer is formed on the light incident layer and the electrically conductive members, and has indented parts and non-indented parts. The adhesive is disposed in the indented parts of the light reflecting layer. The permanent substrate is bonded to the light reflecting layer through the adhesive and through wafer bonding.

摘要翻译： 发光二极管包括外延层，电极，导电构件，光入射层，光反射层，粘合剂和导电永久基板。 外延层具有第一和第二表面。 电极设置在外延层的第二表面上。 导电构件形成在外延层的第一表面上并且彼此间隔开。 在不形成导电构件的区域，在外延层的第一表面上形成光入射层。 光反射层形成在光入射层和导电构件上，并且具有凹入部分和非凹进部分。 粘合剂设置在光反射层的凹进部分中。 永久性基板通过粘合剂并通过晶片接合结合到光反射层。

公开(公告)号：US20110024783A1

公开(公告)日：2011-02-03

申请号：US12903852

申请日：2010-10-13

申请人： Ray-Hua Horng ,  Dong-Sing Wuu

发明人： Ray-Hua Horng ,  Dong-Sing Wuu

IPC分类号： H01L33/60

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.

摘要翻译： 发光二极管包括：具有反射顶表面的导电永久性基板; 外延膜设置在永久性基板的反射上表面上，具有与上表面相对的上表面和粗糙化的下表面，粗糙化的下表面具有不小于300nm的高度的粗糙度和多个 与反射顶表面欧姆接触的峰; 填充在下表面和反射顶表面之间的间隙中并将外延膜连接到永久基板的光学粘合剂; 以及设置在上表面上并与外延膜欧姆接触的顶电极。