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    PROCESS KIT COMPONENTS FOR TITANIUM SPUTTERING CHAMBER
    2.
    发明申请
    PROCESS KIT COMPONENTS FOR TITANIUM SPUTTERING CHAMBER 有权
    TITANIUM溅射室的工艺套件组件

    公开(公告)号：US20070173059A1

    公开(公告)日：2007-07-26

    申请号：US11558928

    申请日：2006-11-12

    申请人： Donny Young ,  Alan Ritchie ,  Ilyoung (Richard) Hong ,  Kathleen Scheible

    发明人： Donny Young ,  Alan Ritchie ,  Ilyoung (Richard) Hong ,  Kathleen Scheible

    IPC分类号： H01L21/4763

    CPC分类号： C23C14/3407 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3497

    摘要： A process kit for a sputtering chamber comprises a deposition ring, cover ring, and a shield assembly, for placement about a substrate support in a sputtering chamber. The deposition ring comprising an annular band with an inner lip extending transversely, a raised ridge substantially parallel to the substrate support, an inner open channel, and a ledge radially outward of the raised ridge. A cover ring at least partially covers the deposition ring, the cover ring comprising an annular plate comprising a footing which rests on a surface about the substrate support, and downwardly extending first and second cylindrical walls.

    摘要翻译： 用于溅射室的处理套件包括沉积环，盖环和屏蔽组件，用于放置在溅射室中的衬底支撑件周围。 沉积环包括具有横向延伸的内唇缘的环形带，基本上平行于基底支撑件的凸脊，内开口通道和径向向外突出的凸缘。 盖环至少部分地覆盖沉积环，盖环包括环形板，环形板包括搁置在基板支撑件周围的表面上的基脚以及向下延伸的第一和第二圆柱形壁。

    Apparatus for enabling concentricity of plasma dark space
    4.
    发明授权
    Apparatus for enabling concentricity of plasma dark space 有权
    用于实现等离子体暗室的同心度的装置

    公开(公告)号：US08702918B2

    公开(公告)日：2014-04-22

    申请号：US13327689

    申请日：2011-12-15

    申请人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

    发明人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

    IPC分类号： C23C14/56

    CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

    摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

    摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

    Process kit with plasma-limiting gap
    5.
    发明授权
    Process kit with plasma-limiting gap 有权

    公开(公告)号：US09695502B2

    公开(公告)日：2017-07-04

    申请号：US13435956

    申请日：2012-03-30

    申请人： Alan Ritchie ,  Donny Young

    发明人： Alan Ritchie ,  Donny Young

    IPC分类号： C23C14/34 ,  H01J37/32 ,  H01J37/34

    CPC分类号： C23C14/34 ,  H01J37/32495 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/3405

    摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.

    Substrate processing system having symmetric RF distribution and return paths
    6.
    发明授权
    Substrate processing system having symmetric RF distribution and return paths 有权
    基板处理系统具有对称的RF分布和返回路径

    公开(公告)号：US09255322B2

    公开(公告)日：2016-02-09

    申请号：US13436776

    申请日：2012-03-30

    申请人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

    发明人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

    IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

    CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/32577 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3414

    摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

    摘要翻译： 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

    Substrate support with radio frequency (RF) return path
    7.
    发明授权
    Substrate support with radio frequency (RF) return path 有权
    基板支持射频（RF）返回路径

    公开(公告)号：US09340866B2

    公开(公告)日：2016-05-17

    申请号：US13435766

    申请日：2012-03-30

    申请人： Alan Ritchie ,  Donny Young ,  Wei W. Wang ,  Ananthkrishna Jupudi ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

    发明人： Alan Ritchie ,  Donny Young ,  Wei W. Wang ,  Ananthkrishna Jupudi ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

    IPC分类号： C23C14/50 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

    CPC分类号： C23C14/34 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3411

    摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

    摘要翻译： 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的装置包括衬底支撑件，其可以包括具有用于在其上支撑衬底的表面的电介质构件; 一个或多个第一导电构件，其布置在所述电介质构件下方并且具有邻近所述电介质构件的电介质构件面向表面; 以及设置在所述一个或多个第一导电构件周围并且接触所述一个或多个第一导电构件的第二导电构件，使得通过RF源提供给所述衬底的RF能量通过沿着所述衬底支撑件的所述电介质构件面向表面径向向外径向向外移动 或更多的第一导电构件，并且沿第一导电构件的第一表面布置成大致平行于一个或多个第一导电构件的沿着电介质层面向表面行进的周边边缘表面。

    Apparatus for physical vapor deposition having centrally fed RF energy
    8.
    发明授权
    Apparatus for physical vapor deposition having centrally fed RF energy 有权
    用于物理气相沉积的装置具有中央馈送的RF能量

    公开(公告)号：US08795488B2

    公开(公告)日：2014-08-05

    申请号：US13048440

    申请日：2011-03-15

    申请人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

    发明人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

    IPC分类号： C23C14/40

    CPC分类号： H01J37/3405 ,  H01J37/3411

    摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

    摘要翻译： 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

    Substrate processing system with mechanically floating target assembly
    9.
    发明授权
    Substrate processing system with mechanically floating target assembly 有权
    具有机械浮动目标组件的基板处理系统

    公开(公告)号：US09303311B2

    公开(公告)日：2016-04-05

    申请号：US13435949

    申请日：2012-03-30

    申请人： Donny Young ,  Alan Ritchie ,  Uday Pai ,  Muhammad Rasheed ,  Keith A. Miller

    发明人： Donny Young ,  Alan Ritchie ,  Uday Pai ,  Muhammad Rasheed ,  Keith A. Miller

    IPC分类号： C23C14/24 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35

    CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3435

    摘要： Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

    摘要翻译： 本文提供基板处理系统。 在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。

    METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES
    10.
    发明申请
    METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 有权
    用于在高比例特征中沉积金属的方法

    公开(公告)号：US20120028461A1

    公开(公告)日：2012-02-02

    申请号：US13178870

    申请日：2011-07-08

    申请人： Alan Ritchie ,  Karl Brown ,  John Pipitone

    发明人： Alan Ritchie ,  Karl Brown ,  John Pipitone

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76898 ,  C23C14/046 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/354 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873

    摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.

    摘要翻译： 本文提供了在基板上形成的高纵横比特征中沉积金属的方法。 在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够 以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些， 以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。