公开(公告)号：US08795488B2

公开(公告)日：2014-08-05

申请号：US13048440

申请日：2011-03-15

申请人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

发明人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

IPC分类号： C23C14/40

CPC分类号： H01J37/3405 ,  H01J37/3411

摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

摘要翻译： 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

公开(公告)号：US20100252417A1

公开(公告)日：2010-10-07

申请号：US12754473

申请日：2010-04-05

申请人： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

发明人： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

IPC分类号： C23C14/34

CPC分类号： C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

摘要翻译： 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20110209995A1

公开(公告)日：2011-09-01

申请号：US12823893

申请日：2010-06-25

申请人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

发明人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

IPC分类号： C23C14/34

CPC分类号： H01J37/3444 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3438

摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.

摘要翻译： 提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。 该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机 旋转，以及连接到基座的可变电容器的输出。 可变电容器的期望状态与过程控制器中的过程配方相关联。 当执行处理配方时，将可变电容器置于所需状态。

公开(公告)号：US09580796B2

公开(公告)日：2017-02-28

申请号：US13173197

申请日：2011-06-30

申请人： Alan Ritchie ,  Michael S. Cox

发明人： Alan Ritchie ,  Michael S. Cox

IPC分类号： C23C14/00 ,  C23C14/35 ,  C23C16/517 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/35 ,  C23C16/517 ,  H01J37/32651 ,  H01J37/34 ,  H01J37/3411 ,  H01J37/3455

摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.

摘要翻译： 本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有基本上符合中空圆筒形状的导电中空圆筒和基本上连续的接地屏蔽。

公开(公告)号：US20120000772A1

公开(公告)日：2012-01-05

申请号：US13173197

申请日：2011-06-30

申请人： Alan Ritchie ,  Michael S. Cox

发明人： Alan Ritchie ,  Michael S. Cox

IPC分类号： C23C14/34

CPC分类号： C23C14/35 ,  C23C16/517 ,  H01J37/32651 ,  H01J37/34 ,  H01J37/3411 ,  H01J37/3455

摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.

摘要翻译： 本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有基本上符合中空圆筒形状的导电中空圆筒和基本上连续的接地屏蔽。

公开(公告)号：US08486242B2

公开(公告)日：2013-07-16

申请号：US12906632

申请日：2010-10-18

申请人： Michael S. Cox

发明人： Michael S. Cox

IPC分类号： C23C14/35 ,  C23C16/00

CPC分类号： C23C14/35 ,  C23C14/34 ,  C23C16/50 ,  H01J37/32669 ,  H01J37/3405

摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.

摘要翻译： 本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有导电中空圆柱体和导电中空圆柱体外部的磁体，其能够影响导电中空圆柱体上的电流密度 。

公开(公告)号：US07097886B2

公开(公告)日：2006-08-29

申请号：US10319827

申请日：2002-12-13

申请人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

发明人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

IPC分类号： H05H1/24

CPC分类号： H01J37/32082 ,  C23C16/045 ,  H01J2237/3327 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

摘要翻译： 一种在具有形成在两个相邻凸起特征之间的间隙的基底上沉积绝缘膜的方法。 该方法包括使用具有同时沉积和溅射部件的高密度等离子体工艺在衬底上和间隙中沉积绝缘膜的一部分，并使用原子层沉积在衬底上和间隙中沉积绝缘膜的另一部分 处理。 在一些实施例中，通过原子层沉积工艺沉积的膜的部分沉积在使用高密度等离子体CVD技术沉积的膜的部分上。 在其他实施例中，通过高密度等离子体CVD工艺沉积的膜的部分沉积在使用原子层沉积工艺沉积的膜的部分上。

公开(公告)号：US06878644B2

公开(公告)日：2005-04-12

申请号：US10430942

申请日：2003-05-06

申请人： Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao ,  Khaled Elsheref ,  Alexandros T. Demos

发明人： Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao ,  Khaled Elsheref ,  Alexandros T. Demos

IPC分类号： H01L21/3105 ,  H01L21/762 ,  H01L21/31 ,  H01L21/461 ,  H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/3105

摘要： A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

摘要翻译： 一种填充蚀刻在衬底中的多个沟槽的方法。 在一个实施例中，该方法包括在衬底上沉积旋涂玻璃材料层并进入多个沟槽; 通过在第一温度下将自旋玻璃材料暴露于电子束辐射第一周期，随后将旋涂玻璃材料暴露于第二温度下的电子束第二周期来固化旋涂玻璃材料层 ，其中第二温度大于第一温度。 该方法的结论是通过使用化学气相沉积技术在固化的旋涂玻璃层上沉积二氧化硅玻璃层。

公开(公告)号：US06418874B1

公开(公告)日：2002-07-16

申请号：US09584167

申请日：2000-05-25

申请人： Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

发明人： Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  H01J37/321

摘要： A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

摘要翻译： 衬底处理室（10）内的环形等离子体源（28）。 环形等离子体源形成具有θ对称性的极向等离子体。 极向等离子体电流基本上平行于等离子体产生结构的表面，从而减少内壁的溅射侵蚀。 等离子体电流类似地基本上平行于腔室内的衬底（34）的工艺表面（32）。 在另一实施例中，衬底和等离子体源之间的成形构件（66）以选定的方式控制等离子体密度，以提高等离子体处理的均匀性。

公开(公告)号：US5839564A

公开(公告)日：1998-11-24

申请号：US903264

申请日：1997-07-25

申请人： Michael S. Cox

发明人： Michael S. Cox

IPC分类号： E21F13/06 ,  B65G65/02

CPC分类号： E21F13/066

摘要： The present invention is directed to an adjustable yoke assembly adapted to pivotally connect components of a continuous haulage system designed for use in underground excavation environments. The yoke assembly is vertically adjustable relative to the component it is carried on by selectively securing the assembly to the component through a series vertically aligned openings.