中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

35 records (took 0.015 seconds)

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120145999A1

    公开(公告)日：2012-06-14

    申请号：US13193690

    申请日：2011-07-29

    Applicant: Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    Inventor： Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    IPC: H01L29/775 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/336

    CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

    Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

    Abstract translation: 提供半导体器件及其制造方法。 该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域 表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开， 并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

    Self-pulsating laser diode
    2.
    发明授权
    Self-pulsating laser diode 失效
    自脉冲激光二极管

    公开(公告)号：US07813388B2

    公开(公告)日：2010-10-12

    申请号：US11932937

    申请日：2007-10-31

    Applicant: Kyung Hyun Park ,  Hyun Sung Ko ,  Young Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    Inventor： Kyung Hyun Park ,  Hyun Sung Ko ,  Young Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    IPC: H01S3/098

    CPC classification number: H01S5/0625 ,  H01S5/0658

    Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

    Abstract translation: 提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

    Method of fabricating a quantum device
    4.
    发明授权
    Method of fabricating a quantum device 失效
    制造量子器件的方法

    公开(公告)号：US6074936A

    公开(公告)日：2000-06-13

    申请号：US93195

    申请日：1998-06-08

    Applicant: Jeong Rae Ro ,  Sung Bock Kim ,  El Hang Lee

    Inventor： Jeong Rae Ro ,  Sung Bock Kim ,  El Hang Lee

    IPC: H01L21/30 ,  H01L21/20 ,  H01L21/205 ,  H01L21/311 ,  H01L21/36 ,  H01L21/00

    CPC classification number: B82Y10/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/31116 ,  Y10S438/962

    Abstract: A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.

    Abstract translation: 一种制造量子线结构和器件的方法，以及量子点结构和器件包括以下步骤：在半导体衬底上沉积绝缘层，在绝缘层中形成线图案和方形图案，形成V形槽图案结构和 通过热蚀刻将反向四边形金字塔图案化的结构蒸发成量子阱层的未被掩模层的线状掩模区域和方形掩模区域保护的部分，通过交替生长形成量子线和量子点 阻挡层和V沟槽图案化衬底上的有源层和反向四边形金字塔图案化衬底。

    Fabricating method of GaAs substrate having V-shaped grooves
    5.
    发明授权
    Fabricating method of GaAs substrate having V-shaped grooves 失效
    具有V形槽的GaAs衬底的制造方法

    公开(公告)号：US5824453A

    公开(公告)日：1998-10-20

    申请号：US946915

    申请日：1997-10-09

    Applicant: Sung-Bock Kim ,  Seong-Ju Park ,  Jeong-Rae Ro ,  El-Hang Lee

    Inventor： Sung-Bock Kim ,  Seong-Ju Park ,  Jeong-Rae Ro ,  El-Hang Lee

    IPC: H01L29/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308 ,  G03F7/00

    CPC classification number: H01L21/02395 ,  H01L21/02433 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/30617

    Abstract: Disclosed is a fabricating method of a GaAs substrate having a V-shaped groove in a higher density, that is a double density, the method comprising the steps of forming a Si.sub.3 N.sub.4 layer on a main surface of the GaAs substrate; patterning the Si.sub.3 N.sub.4 layer using a photo-lithography to form a patterned Si.sub.3 N.sub.4 layer having a minimum width; wet-etching the GaAs substrate using the patterned Si.sub.3 N.sub.4 layer as a mask, so as to form (111) and (100) surfaces of the GaAs substrate beneath the patterned Si.sub.3 N.sub.4 ; selectively growing a GaAs film on the GaAs substrate etched thus using the patterned Si.sub.3 N.sub.4 layer as a mask so as to form the GaAs film with two (111) facets only on a (100) surface of the GaAs substrate; and removing the Si.sub.3 N.sub.4 layer. The V-shaped grooves can be formed on a GaAs substrate utilizing a difference of growth rate caused by surface orientation of the substrate, and therefore the grooves can be formed in double density.

    Abstract translation: 本发明公开了一种GaAs衬底的制造方法，该GaAs衬底具有较高密度的V形沟槽，即双重密度，该方法包括以下步骤：在GaAs衬底的主表面上形成Si 3 N 4层; 使用光刻法构图Si 3 N 4层以形成具有最小宽度的图案化的Si 3 N 4层; 使用图案化的Si 3 N 4层作为掩模对GaAs衬底进行湿法蚀刻，以在图案化的Si 3 N 4之下形成GaAs衬底的（111）和（100）表面; 在GaAs衬底上选择性地生长GaAs膜，使用图案化的Si 3 N 4层作为掩模进行蚀刻，以便仅在GaAs衬底的（100）表面上形成具有两个（111）面的GaAs膜; 并去除Si3N4层。 可以使用由衬底的表面取向引起的生长速度差，在GaAs衬底上形成V形槽，因此可以以双重密度形成沟槽。

    Electroabsorption duplexer
    8.
    发明授权
    Electroabsorption duplexer 有权
    电吸收双工器

    公开(公告)号：US07583869B2

    公开(公告)日：2009-09-01

    申请号：US11451743

    申请日：2006-06-13

    Applicant: Young Shik Kang ,  Je Ha Kim ,  Sung Bock Kim ,  Yong Duck Chung ,  Kwang Seong Choi

    Inventor： Young Shik Kang ,  Je Ha Kim ,  Sung Bock Kim ,  Yong Duck Chung ,  Kwang Seong Choi

    IPC: G02B6/12

    CPC classification number: H01S5/026 ,  H01S5/0262 ,  H01S5/0265 ,  H01S5/1014 ,  H01S5/22 ,  H01S5/50

    Abstract: An electroabsorption (EA) duplexer in which an optical amplifier, a photodetector, and an optical modulator are monolithically integrated to obtain a high radio frequency (RF) gain in radio-over fiber (RoF) link optical transmission technology is provided. The EA duplexer includes a substrate, a separation area, an optical detection/modulation unit, and an optical amplification unit. The separation area includes a first epitaxial layer formed of at least one material layer on the substrate. The first epitaxial layer functions as a first optical waveguide. The optical detection/modulation unit includes a second epitaxial layer formed of at least one material layer on the first epitaxial layer to detect and modulate an optical signal. The second epitaxial layer functions as a second optical waveguide. The optical amplification unit includes the second optical waveguide and a third epitaxial layer formed of at least one material layer on the second epitaxial layer to amplify an optical signal. The third epitaxial layer functions as a third optical waveguide. The optical amplification unit is electrically separated from the optical detection/modulation unit by the separation area and is disposed on at least one side of the optical detection/modulation unit.

    Abstract translation: 提供了其中光放大器，光电检测器和光调制器被单片集成以获得无线电光纤（RoF）链路光传输技术中的高射频（RF）增益的电吸收（EA）双工器。 EA双工器包括基板，分离区，光检测/调制单元和光放大单元。 分离区域包括由衬底上的至少一个材料层形成的第一外延层。 第一外延层用作第一光波导。 光检测/调制单元包括由第一外延层上的至少一个材料层形成的第二外延层，以检测和调制光信号。 第二外延层用作第二光波导。 光放大单元包括第二光波导和由第二外延层上的至少一个材料层形成的第三外延层，以放大光信号。 第三外延层用作第三光波导。 光放大单元通过分离区域与光检测/调制单元电分离，并设置在光检测/调制单元的至少一侧。

    Method of fabricating semiconductor optical device
    9.
    发明申请
    Method of fabricating semiconductor optical device 有权
    制造半导体光学器件的方法

    公开(公告)号：US20060189016A1

    公开(公告)日：2006-08-24

    申请号：US11293615

    申请日：2005-12-02

    Applicant: Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

    Inventor： Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

    IPC: H01L21/00

    CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

    Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

    Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

    Multi DFB laser diode
    10.
    发明授权
    Multi DFB laser diode 失效
    多DFB激光二极管

    公开(公告)号：US07012945B2

    公开(公告)日：2006-03-14

    申请号：US10725822

    申请日：2003-12-01

    Applicant: Kyung-Hyun Park ,  Young-Ahn Leem ,  Dong-Churl Kim ,  Dae-Su Yee ,  Sung-Bock Kim ,  Yong-Soon Baek

    Inventor： Kyung-Hyun Park ,  Young-Ahn Leem ,  Dong-Churl Kim ,  Dae-Su Yee ,  Sung-Bock Kim ,  Yong-Soon Baek

    IPC: H01S5/00

    CPC classification number: H01S5/227 ,  H01S5/028 ,  H01S5/0623 ,  H01S5/06258 ,  H01S5/0658 ,  H01S5/1215 ,  H01S5/1237 ,  H01S5/2081 ,  H01S5/2226 ,  H01S5/3213 ,  H01S5/32333 ,  H01S2301/173

    Abstract: A multi DFB laser diode for generating spontaneous pulses comprises first and second DFB sections each of which has a substrate including a diffraction grating, an active layer formed on the substrate, a clad layer formed on the active layer and including a refraction varying layer, and an electrode formed on the active layer; and a phase tuning section including a substrate, an active layer formed on the substrate, a clad layer formed on the active layer, and an electrode isolated from the electrode of the first and second DFB sections. The refraction varying layer in the active layer of the first DFB section has a refractive index different from that of the refraction varying layer in the active layer of the second DFB section.

    Abstract translation: 用于产生自发脉冲的多DFB激光二极管包括第一和第二DFB部分，每个DFB部分具有包括衍射光栅的衬底，在衬底上形成的有源层，形成在有源层上并包括折射变化层的覆层，以及 形成在有源层上的电极; 以及相位调谐部，其包括基板，形成在所述基板上的有源层，形成在所述有源层上的覆盖层，以及与所述第一DFB部和所述第二DFB部的电极隔离的电极。 第一DFB部分的有源层中的折射变化层具有与第二DFB部分的有源层中的折射变化层的折射率不同的折射率。

Patent Agency Ranking