公开(公告)号：US08674405B1

公开(公告)日：2014-03-18

申请号：US13407588

申请日：2012-02-28

申请人： Dubravko Babić ,  Firooz Faili ,  Daniel Francis ,  Quentin Diduck ,  Felix Ejeckam

发明人： Dubravko Babić ,  Firooz Faili ,  Daniel Francis ,  Quentin Diduck ,  Felix Ejeckam

IPC分类号： H01L29/20 ,  H01L23/532

CPC分类号： H01L21/0254 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/3732 ,  H01L24/32 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

摘要翻译： 公开了用于集成宽间隙半导体，特别是用合成金刚石衬底的氮化镓外延层的方法。 金刚石基底通过将合成金刚石沉积到沉积或形成在包含由氮化镓制成的至少一层的分层结构上的成核层而产生。 公开了用于制造具有低弓形和高结晶质量的GaN-金刚石晶片的方法以及针对特定应用定制的用于制造在金刚石GaN晶片和芯片上的优选选择。

公开(公告)号：US20080296586A1

公开(公告)日：2008-12-04

申请号：US12018131

申请日：2008-01-22

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

IPC分类号： H01L29/12 ,  B32B9/00

CPC分类号： G01T1/24 ,  H01L21/02389 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02664 ,  H01L21/76254 ,  H01L27/14694 ,  H01L33/0079 ,  Y10T428/30

摘要： Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

摘要翻译： 公开了以合成金刚石晶片原子连接的薄的高质量半导体膜制造复合晶片的方法。 合成金刚石基底是通过将合成金刚石沉积到沉积在体半导体晶片上的成核层上而制成的，所述成核层已准备好允许将薄半导体膜与剩余的体半导体晶片分离。 剩下的半导体晶片可以重新使用。 合成金刚石基底用作散热器和机械基板。

公开(公告)号：US07943485B2

公开(公告)日：2011-05-17

申请号：US12018131

申请日：2008-01-22

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： G01T1/24 ,  H01L21/02389 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02664 ,  H01L21/76254 ,  H01L27/14694 ,  H01L33/0079 ,  Y10T428/30

摘要： Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

摘要翻译： 公开了以合成金刚石晶片原子连接的薄的高质量半导体膜制造复合晶片的方法。 合成金刚石基底是通过将合成金刚石沉积到沉积在体半导体晶片上的成核层上而制成的，所述成核层已准备好允许将薄半导体膜与剩余的体半导体晶片分离。 剩下的半导体晶片可以重新使用。 合成金刚石基底用作散热器和机械基板。