摘要:
Silicon carbide is deposted by chemical vapor deposition from a vapor source having a single molecular species that provides both the silicon and the carbon. The molecular species has the composition C.sub.n Si.sub.n H.sub.m, where m ranges from 2n+1 to 4n+1 inclusive and n ranges from 2 to 6 inclusive, and exhibits a primary pyrolysis mechanism producing reactive fragments containing both silicon and carbon atoms. Unbalanced decomposition paths are avoided. The silicon and carbon atoms are necessarily codeposited in equal numbers and at equal rates onto the substrate, producing stoichiometric deposited silicon carbide. Preferred molecular sources include H.sub.3 SiCH.sub.2 CH.sub.2 SiH.sub.3, a silacycloalkane of the form (--SiH.sub.2 CH.sub.2 --).sub.p, where p is 2, 3, 4, or 5, and a cyclic structure of the form (--SiH(CH.sub.3)--).sub.q, where q is 4 or 5.
摘要:
A process for drying a gaseous hydrogen halide of the formula HX, wherein X is selected from the group consisting of bromine, chlorine, fluorine, and iodine, to remove water impurity therefrom, comprising:contacting the water impurity-containing gaseous hydrogen halide with a scavenger including a support having associated therewith one or more members of the group consisting of:(a) an active scavenging moiety selected from one or more members of the group consisting of:(i) metal halide compounds dispersed in the support, of the formula MX.sub.y ; and(ii) metal halide pendant functional groups of the formula -MX.sub.y-1 covalently bonded to the support, wherein M is a y-valent metal, and y is an integer whose value is from 1 to 3;(b) corresponding partially or fully alkylated compounds and/or pendant functional groups, of the metal halide compounds and/or pendant functional groups of (a);wherein the alkylated compounds and/or pendant functional groups, when present, are reactive with the gaseous hydrogen halide to form the corresponding halide compounds and/or pendant functional groups of (a); andM being selected such that the heat of formation, .DELTA.H.sub.f of its hydrated halide, MX.sub.y.(H.sub.2 O).sub.n, is governed by the relationship:.DELTA.H.sub.f .gtoreq.n.times.10.1 kilocalories/mole of such hydrated halide compoundwherein n is the number of water molecules bound to the metal halide in the metal halide hydrate.Also disclosed is an appertaining scavenger composition and a contacting apparatus wherein the scavenger is deployed in a bed for contacting with the water impurity-containing gaseous hydrogen halide.
摘要:
Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. The complexes of the invention utilize monodentate or multidentate ligands to provide additional coordination to the metal atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications.
摘要:
This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.
摘要:
An apparatus for purifying a gaseous mixture comprising arsine, phosphine, ammonia, and/or inert gases, to remove Lewis acid and/or oxidant impurities therefrom, comprising a vessel containing a bed of a scavenger, the scavenger including a support having associated therewith an anion which is effective to remove such impurities, such anion being selected from one or more members of the group consisting of: (i) carbanions whose corresponding protonated compounds have a pK.sub.a value of from about 22 to about 36; and (ii) anions formed by reaction of such carbanions with the primary component of the mixture.
摘要:
A metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAY with X;y is an integer having a value of 2, 3 or 4;each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要:
A fluid storage and dispensing system, comprising: a fluid storage and dispensing vessel constructed and arranged for selective dispensing of fluid therefrom; a solid-phase support in the vessel; and an affinity medium on the solid-phase support, wherein the affinity medium reversibly takes up the fluid when contacted therewith, and from which the fluid is disengagable under dispensing conditions. The affinity medium may be a liquid, oil, gel, or solid (porous solid, thin film solid, or bulk solid). The system of the invention may be employed for the storage and dispensing of fluids such as hydride, halide and dopant gases for manufacturing of semiconductor products.
摘要:
A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.
摘要:
A scavenger for purifying inert gas mixtures to remove Lewis acid and oxidant impurities therefrom, comprising (i) an inert inorganic support, and (ii) an active scavenging species on the support, formed by deposition thereon of an organometallic precursor and pyrolysis thereof at a selected elevated temperature. The organometallic precursor is an alkyl metal compound comprising a metal of Group IA, IIA, and/or IIIA, wherein the pyrolysis temperature may range from about 150.degree. C. to about 250.degree. C., depending on the specific alkyl metal compound employed as the precursor. Also disclosed are: a corresponding method of making the scavenger; a process for purifying inert gases by contacting same with the scavenger; and a vessel containing a bed of the scavenger, useful as an apparatus for purifying inert gases.
摘要:
A scavenger, having utility for purifying a mixture comprising:(i) a primary component selected from one or more members of the group consisting of hydrogen selenide and hydrogen telluride, and(ii) impurities selected from one or more members of the group consisting of moisture and oxidants, comprising:(a) a support; and(b) associated with said support, one or more members of the group consisting of:(I) precusor compounds of the formula R.sub.3-x AlH.sub.x, wherein x is 0 or 1, and R is a hydrocarbon radical containing from 1 to 12 carbon atoms; and(II) aluminum chalconides of the formula Al.sub.2 M.sub.3, wherein M is selenium or tellurium.Illustrative supports useful in such scavenger include aluminosilicates, alumina, silica, carbon, and macroreticulate polymers. A process and apparatus are disclosed for purifying hyhrogen selenide and/or hydrogen telluride, to remove moisture and/or oxidant impurities therefrom, in which a bed of the scavenger is employed.
摘要翻译:一种清除剂,其用于纯化混合物,其包含:(i)选自硒化氢和碲化氢中的一种或多种成员的主要成分,和(ii)选自以下的一种或多种成员的杂质: 水分和氧化剂,包括:(a)载体; 和(b)与所述载体相关联,所述组中的一个或多个成员包括:(I)式R3-xAlHx的前体化合物,其中x为0或1,R为含有1至12个碳的烃基 原子 和(II)式Al 2 M 3的铝金卤素,其中M是硒或碲。 在这种清除剂中有用的说明性的载体包括硅铝酸盐,氧化铝,二氧化硅,碳和大理石聚合物。 公开了一种用于净化硒化氢和/或碲化氢的方法和装置,以除去其中使用清除剂床的水分和/或氧化剂杂质。