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    Growth of BaSrTiO.sub.3 using polyamine-based precursors
    1.
    发明授权
    Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
    使用多胺类前体生长BaSrTiO3

    公开(公告)号：US5919522A

    公开(公告)日：1999-07-06

    申请号：US835768

    申请日：1997-04-08

    申请人： Thomas H. Baum ,  Gregory T. Stauf ,  Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner ,  Gautam Bhandari ,  Brian A. Vaartstra

    发明人： Thomas H. Baum ,  Gregory T. Stauf ,  Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner ,  Gautam Bhandari ,  Brian A. Vaartstra

    IPC分类号： C07C49/12 ,  C07C211/14 ,  C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  C23C16/00

    CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4481

    摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.

    摘要翻译： 一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。 将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。 气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。 液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。

    Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
    2.
    发明授权
    Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same 失效
    用于化学气相沉积的前体组合物和包含其的配体交换金属 - 有机前体溶液

    公开(公告)号：US5820664A

    公开(公告)日：1998-10-13

    申请号：US414504

    申请日：1995-03-31

    申请人： Robin A. Gardiner ,  Peter S. Kirlin ,  Thomas H. Baum ,  Douglas Gordon ,  Timothy E. Glassman ,  Sofia Pombrik ,  Brian A. Vaartstra

    发明人： Robin A. Gardiner ,  Peter S. Kirlin ,  Thomas H. Baum ,  Douglas Gordon ,  Timothy E. Glassman ,  Sofia Pombrik ,  Brian A. Vaartstra

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  G02B6/036 ,  H01L39/24 ,  C09K3/00

    CPC分类号： H01L39/2441 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45561 ,  Y10S423/14

    摘要： A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.

    摘要翻译： 一种金属源试剂液体溶液，其包含：（i）至少一种金属配位络合物，其包含与稳定络合物中的至少一种配位体配位结合的金属，其中所述配体选自β-二酮化合物， β-酮基，β-二亚胺，C 1 -C 8烷基，C 2 -C 10烯基，C 2 -C 15环烯基，C 6 -C 10芳基，C 1 -C 8烷氧基及其氟化衍生物; 和（ii）金属配位络合物的溶剂。 该溶液有效地用于金属配位络合物如Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd的金属化学气相沉积 ，Cr，W，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi ，和/或Yb。 溶剂可以包括甘醇二甲醚溶剂，链烷醇，有机醚，脂族烃和/或芳族烃。 具有两种或更多种金属配位络合物的本发明的溶液对有害的配体交换反应具有抗性，这对于CVD应用的金属络合物的稳定性和/或挥发性是不利的。

    Liquid delivery MOCVD process for deposition of high frequency dielectric materials
    9.
    发明授权
    Liquid delivery MOCVD process for deposition of high frequency dielectric materials 有权
    用于沉积高频电介质材料的液体输送MOCVD工艺

    公开(公告)号：US06277436B1

    公开(公告)日：2001-08-21

    申请号：US09216673

    申请日：1998-12-18

    申请人： Gregory T. Stauf ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Gregory T. Stauf ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C23C1640

    CPC分类号： H01L28/55 ,  C23C16/40 ,  C23C16/4481 ,  H01L21/31691 ,  H01L27/10852

    摘要： A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N2O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400° C. to about 1200° C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors.

    摘要翻译： 用于沉积诸如（Ba，Sr）钛酸盐和（Zr，Sn）钛酸盐的电介质材料的液体输送MOCVD方法，其中金属源化合物溶解或悬浮在溶剂中并在约100℃的温度下闪蒸至 约300℃，并通过诸如氩气，氮气，氦气，氨等的载气进入化学气相沉积反应器，其中前体蒸气与氧气，臭氧，N 2 O等氧化性共反应气体混合 等等，以在约0.1托至约760托的化学气相沉积室压力下在约400℃至约1200℃的温度下将高介电金属氧化物膜沉积在基底上。 这种方法可以例如用于形成（Ba，Sr）钛酸盐电介质材料，其中氧化物的总金属含量的至少60原子％为钛。 本发明的高介电材料可用于形成用于例如动态随机存取存储器和高频电容器的应用的电容微电子器件结构。