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公开(公告)号：US20090305515A1
公开(公告)日：2009-12-10
申请号：US12134413
申请日：2008-06-06
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/3105
摘要： Embodiments of the invention generally relate to a method and apparatus for curing dielectric material deposited in trenches or gaps in the surface of a substrate to produce a feature free of voids and seams. In one embodiment, the dielectric material is steam annealed while being exposed to ultraviolet radiation. In one embodiment, the dielectric material is further thermally annealed in a nitrogen environment.
摘要翻译： 本发明的实施方案一般涉及用于固化沉积在基板表面中的沟槽或间隙中的电介质材料以产生无空隙和接缝的特征的方法和装置。 在一个实施例中，电介质材料在暴露于紫外线辐射的同时进行蒸汽退火。 在一个实施例中，电介质材料在氮气环境中进一步热退火。
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公开(公告)号：US20120129275A1
公开(公告)日：2012-05-24
申请号：US13011687
申请日：2011-01-21
申请人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
发明人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
CPC分类号： H05B41/3921 , H01L21/67115 , H05B41/3922
摘要： The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.
摘要翻译： 本发明一般涉及控制UV灯输出以增加辐照度均匀性的方法。 方法通常包括确定室内的基线辐照度，确定对应于第一灯和第二灯的衬底上的相对辐照度，以及基于相对辐照度和基线辐照度确定校正或补偿因子。 然后通过使用校正或补偿因子的闭环控制来调节灯，以将灯单独调节到期望的输出。 在将灯调节到期望的输出之前，灯可以可选地被调整为相等的辐照度。 闭环控制确保从基板到基板的工艺均匀性。 辐照度测量和校正或补偿因素允许由于室部件劣化，腔室部件更换或腔室清洁而调节灯具设定点。
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公开(公告)号：US08309421B2
公开(公告)日：2012-11-13
申请号：US13011687
申请日：2011-01-21
申请人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
发明人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
IPC分类号： H01L21/336 , H01L21/76
CPC分类号： H05B41/3921 , H01L21/67115 , H05B41/3922
摘要： The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.
摘要翻译： 本发明一般涉及控制UV灯输出以增加辐照度均匀性的方法。 方法通常包括确定室内的基线辐照度，确定对应于第一灯和第二灯的衬底上的相对辐照度，以及基于相对辐照度和基线辐照度确定校正或补偿因子。 然后通过使用校正或补偿因子的闭环控制来调节灯，以将灯单独调节到期望的输出。 在将灯调节到期望的输出之前，灯可以可选地被调整为相等的辐照度。 闭环控制确保从基板到基板的工艺均匀性。 辐照度测量和校正或补偿因素允许由于室部件劣化，腔室部件更换或腔室清洁而调节灯具设定点。
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4.发明申请公开(公告)号：US20120258259A1
公开(公告)日：2012-10-11
申请号：US13440720
申请日：2012-04-05
申请人： Amit Bansal , Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Scott A. Hendrickson , Thomas Nowak
发明人： Amit Bansal , Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Scott A. Hendrickson , Thomas Nowak
IPC分类号： C23C16/455 , C23C16/46 , C23C16/458
CPC分类号： C23C16/56 , C23C16/0272 , C23C16/4401 , C23C16/4404 , C23C16/45565 , C23C16/54
摘要： Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.
摘要翻译： 本发明的实施例提供了用于在相同的室中进行UV处理和化学处理和/或沉积的装置和方法。 本发明的一个实施例提供了一种处理室，其包括设置在位于处理室的内部体积中的基板支撑件上方的UV透明气体分配喷头，设置在UV透明气体分配喷头上方的UV透明窗口和设置在UV透明气体分配喷头上的UV单元 在内容之外。 UV单元被配置为通过UV透明窗口和UV透明气体分配喷头将UV光引向基板支撑。
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5.发明授权Multifunctional heater/chiller pedestal for wide range wafer temperature control 有权多功能加热器/冷水机座，适用于宽幅晶圆温度控制公开(公告)号：US08274017B2
公开(公告)日：2012-09-25
申请号：US12641819
申请日：2009-12-18
申请人： Lipyeow Yap , Tuan Anh Nguyen , Dale R. Du Bois , Sanjeev Baluja , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jianhua Zhou
发明人： Lipyeow Yap , Tuan Anh Nguyen , Dale R. Du Bois , Sanjeev Baluja , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jianhua Zhou
IPC分类号： H05B3/68
CPC分类号： H01L21/67109 , H01L21/68792
摘要： Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.
摘要翻译： 本发明的实施例一般涉及半导体处理室，更具体地说，涉及用于半导体处理室的加热支撑基座。 在一个实施例中，提供了一种用于半导体处理室的基座。 基座包括基板支撑件，该基板支撑件包括导电材料并且具有用于接收基板的支撑表面，封装在基板支撑件内的电阻加热器，在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口， 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件，所述冷却通道组件设置在所述轴体内，用于经由内部冷却路径从所述基座移除热量，其中所述基板支撑件具有位于 加热元件和环形冷却通道。
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公开(公告)号：US20120090691A1
公开(公告)日：2012-04-19
申请号：US13248656
申请日：2011-09-29
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。
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公开(公告)号：US20070298362A1
公开(公告)日：2007-12-27
申请号：US11562043
申请日：2006-11-21
CPC分类号： F27B17/0025 , H01L21/67115
摘要： A pump liner is used to direct a laminar flow of purge gas across a workpiece to remove contaminants or species outgassed or otherwise produced by the workpiece during processing. The pump liner can take the form of a ring having a plurality of injection ports, such as slits of a variety of shapes and/or sizes, opposite a plurality of receiving ports in order to provide the laminar flow. The flow of purge gas is sufficient to carry a contaminant or outgassed species from the processing chamber in order to prevent the collection of the contaminants on components of the chamber. The pump liner can be heated, via conduction and irradiation from a radiation source, for example, in order to prevent the condensation of species on the liner. The pump liner also can be anodized or otherwise processed in order to increase the emissivity of the liner.
摘要翻译： 泵衬套用于引导吹扫气体的层流穿过工件以去除在加工过程中由工件脱气或以其它方式产生的污染物或物质。 泵衬套可以采取具有多个注入口的环的形式，例如与多个接收端口相对的各种形状和/或尺寸的狭缝，以提供层流。 吹扫气体的流动足以承载来自处理室的污染物或去气物质，以便防止在室的部件上收集污染物。 可以通过例如辐射源的传导和辐射来加热泵衬垫，以防止物质在衬套上的冷凝。 泵衬垫也可以被阳极化处理或以其它方式加工，以便增加衬套的发射率。
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公开(公告)号：US08911553B2
公开(公告)日：2014-12-16
申请号：US13248656
申请日：2011-09-29
IPC分类号： C23C16/455 , C23C16/48 , C23C16/56 , H01L21/67 , C23C16/44 , H01L21/677
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。
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9.发明授权Deposition of an amorphous carbon layer with high film density and high etch selectivity 有权沉积具有高膜密度和高蚀刻选择性的无定形碳层公开(公告)号：US08679987B2
公开(公告)日：2014-03-25
申请号：US13468776
申请日：2012-05-10
申请人： Patrick Reilly , Shahid Shaikh , Tersem Summan , Deenesh Padhi , Sanjeev Baluja , Juan Carlos Rocha-Alvarez , Thomas Nowak , Bok Hoen Kim , Derek R. Witty
发明人： Patrick Reilly , Shahid Shaikh , Tersem Summan , Deenesh Padhi , Sanjeev Baluja , Juan Carlos Rocha-Alvarez , Thomas Nowak , Bok Hoen Kim , Derek R. Witty
IPC分类号： H01L21/47 , H01L21/312
CPC分类号： H01L21/02527 , C23C16/26 , C23C16/56 , H01L21/02115 , H01L21/02274 , H01L21/02348 , H01L21/02592 , H01L21/0262 , H01L21/31144
摘要： Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.
摘要翻译： 本文所述的实施例涉及一种用于处理衬底的方法。 在一个实施方案中，该方法包括将包含烃源和稀释气体的气体混合物引入位于处理系统内的沉积室中，在沉积室中从约200℃至约200℃的温度和 约700℃以在基底上形成低氢含量的无定形碳层，将基底转移到位于处理系统内的固化室中，而不破坏真空，并在固化温度下将基底暴露于固化室内的UV辐射 高于约200℃
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10.发明授权Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections 有权使用具有椭圆形和抛物面反射部分的反射器将衬底暴露于UV辐射的装置和方法公开(公告)号：US08597011B2
公开(公告)日：2013-12-03
申请号：US12976746
申请日：2010-12-22
申请人： Andrzei Kaszuba , Juan Carlos Rocha-Alvarez , Thomas Nowak , Sanjeev Baluja , Ashish Shah , Inna Shmurun
发明人： Andrzei Kaszuba , Juan Carlos Rocha-Alvarez , Thomas Nowak , Sanjeev Baluja , Ashish Shah , Inna Shmurun
IPC分类号： B29C35/08
CPC分类号： B05D3/067 , B29C71/04 , B29C2035/0827 , F26B3/28 , H01L21/67115
摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.
摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本均匀的辐照度图案。 还公开了其他实施例。
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