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公开(公告)号：US06919935B2
公开(公告)日：2005-07-19
申请号：US10620133
申请日：2003-07-15
申请人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
IPC分类号： A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1335 , G02F1/1347 , G02F1/136 , G02F1/1362 , G09G3/30 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L25/075 , H01L27/06 , H01L27/12 , H01L27/15 , H01L29/786 , H01L33/00 , H01S5/02 , H01S5/42 , H04N5/70 , H04N5/74 , H05B33/12 , G02F1/1343
CPC分类号： H01L27/1266 , A61B3/113 , G02B5/30 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02F1/13336 , G02F1/133526 , G02F1/13454 , G02F1/13473 , G02F1/136209 , G02F1/136277 , G02F2001/13613 , G02F2202/105 , G09G3/30 , G09G3/32 , G09G3/36 , G09G3/3607 , G09G3/3648 , G09G2300/023 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7441 , H04N5/7491 , H04N9/3141 , H05B33/12 , H01L2924/00
摘要： The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.
摘要翻译： 本发明涉及在硅衬底上形成薄膜晶体管（TFT）的阵列以及用于转移到公共模块体的这种衬底的切割和平铺。 在移动瓦片之后，TFT的激活显示电极与晶体管相邻形成。
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2.发明授权
公开(公告)号：US5377031A
公开(公告)日：1994-12-27
申请号：US108528
申请日：1993-08-18
申请人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
IPC分类号： A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1335 , G02F1/1347 , G02F1/136 , G02F1/1362 , G09G3/30 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L21/98 , H01L25/075 , H01L25/10 , H01L27/06 , H01L27/12 , H01L27/15 , H01L29/786 , H01L33/00 , H01S5/02 , H01S5/42 , H04N5/70 , H04N5/74 , H05B33/12 , G02F1/1343
CPC分类号： G02F1/13454 , A61B3/113 , G02B27/0093 , G02B27/0172 , G02F1/136277 , G09G3/30 , G09G3/36 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L25/10 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H04N5/7441 , H04N9/3141 , H05B33/12 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02B5/30 , G02F1/13336 , G02F2001/13613 , G02F2202/105 , G09G2300/023 , G09G2300/0809 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , G09G3/32 , G09G3/3607 , G09G3/3614 , G09G3/3648 , H01L2221/68359 , H01L2221/68363 , H01L27/1266 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7491
摘要： The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred. The invention can be used in a liquid crystal display and may include one or more light shielding layers.
摘要翻译： 本发明涉及在硅衬底上形成薄膜晶体管（TFT）的阵列以及用于转移到公共模块体的这种衬底的切割和平铺。 在移动瓦片之后，TFT的激活显示电极与晶体管相邻形成。 本发明可以用在液晶显示器中，并且可以包括一个或多个遮光层。
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公开(公告)号：US06486929B1
公开(公告)日：2002-11-26
申请号：US09082925
申请日：1998-05-21
申请人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
IPC分类号： G02F11343
CPC分类号： H01L27/1266 , A61B3/113 , G02B5/30 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02F1/13336 , G02F1/133526 , G02F1/13454 , G02F1/13473 , G02F1/136209 , G02F1/136277 , G02F2001/13613 , G02F2202/105 , G09G3/30 , G09G3/32 , G09G3/36 , G09G3/3607 , G09G3/3614 , G09G3/3648 , G09G2300/023 , G09G2300/0809 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L25/10 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7441 , H04N5/7491 , H04N9/3141 , H05B33/12 , H01L2924/00
摘要： The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.
摘要翻译： 本发明涉及在硅衬底上形成薄膜晶体管（TFT）的阵列以及用于转移到公共模块体的这种衬底的切割和平铺。 在移动瓦片之后，TFT的激活显示电极与晶体管相邻形成。
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公开(公告)号：US06593978B2
公开(公告)日：2003-07-15
申请号：US09465140
申请日：1999-12-16
申请人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
IPC分类号： G02F1136
CPC分类号： H01L27/1266 , A61B3/113 , G02B5/30 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02F1/13336 , G02F1/133526 , G02F1/13454 , G02F1/13473 , G02F1/136209 , G02F1/136277 , G02F2001/13613 , G02F2202/105 , G09G3/30 , G09G3/32 , G09G3/36 , G09G3/3607 , G09G3/3648 , G09G2300/023 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7441 , H04N5/7491 , H04N9/3141 , H05B33/12 , H01L2924/00
摘要： The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.
摘要翻译： 本发明涉及在硅衬底上形成薄膜晶体管（TFT）的阵列以及用于转移到公共模块体的这种衬底的切割和平铺。 在移动瓦片之后，TFT的激活显示电极与晶体管相邻形成。
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公开(公告)号：US5757445A
公开(公告)日：1998-05-26
申请号：US579122
申请日：1995-12-27
申请人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
IPC分类号： A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1335 , G02F1/1347 , G02F1/136 , G02F1/1362 , G09G3/30 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L21/98 , H01L25/075 , H01L25/10 , H01L27/06 , H01L27/12 , H01L27/15 , H01L29/786 , H01L33/00 , H01S5/02 , H01S5/42 , H04N5/70 , H04N5/74 , H05B33/12
CPC分类号： H05B33/12 , A61B3/113 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02F1/133526 , G02F1/13454 , G02F1/136209 , G02F1/136277 , G09G3/30 , G09G3/36 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L25/10 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H04N5/7441 , H04N9/3141 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02B5/30 , G02F1/13336 , G02F1/13473 , G02F2001/13613 , G02F2202/105 , G09G2300/023 , G09G2300/0809 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , G09G3/32 , G09G3/3607 , G09G3/3614 , G09G3/3648 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7491
摘要： The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.
摘要翻译： 本发明涉及在硅衬底上形成薄膜晶体管（TFT）的阵列以及用于转移到公共模块体的这种衬底的切割和平铺。 在移动瓦片之后，TFT的激活显示电极与晶体管相邻形成。
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6.发明授权Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material 失效形成在与液晶材料相邻的绝缘层上的多晶硅晶体管
公开(公告)号：US5499124A
公开(公告)日：1996-03-12
申请号：US437034
申请日：1995-05-08
申请人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
IPC分类号： A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1335 , G02F1/1347 , G02F1/136 , G02F1/1362 , G09G3/30 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L21/98 , H01L25/075 , H01L25/10 , H01L27/06 , H01L27/12 , H01L27/15 , H01L29/786 , H01L33/00 , H01S5/02 , H01S5/42 , H04N5/70 , H04N5/74 , H05B33/12 , H01L21/60
CPC分类号： H05B33/12 , A61B3/113 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02F1/133526 , G02F1/13454 , G02F1/136209 , G02F1/136277 , G09G3/30 , G09G3/36 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L25/10 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H04N5/7441 , H04N9/3141 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02B5/30 , G02F1/13336 , G02F1/13473 , G02F2001/13613 , G02F2202/105 , G09G2300/023 , G09G2300/0809 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , G09G3/32 , G09G3/3607 , G09G3/3614 , G09G3/3648 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7491
摘要： The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.
摘要翻译： 本发明涉及在硅衬底上形成薄膜晶体管（TFT）的阵列以及用于转移到公共模块体的这种衬底的切割和平铺。 在移动瓦片之后，TFT的激活显示电极与晶体管相邻形成。
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7.发明授权
公开(公告)号：US5256562A
公开(公告)日：1993-10-26
申请号：US970675
申请日：1992-11-04
申请人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda D. Dingle , Jason E. Dingle , Ngwe Cheong
IPC分类号： A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1335 , G02F1/1347 , G02F1/136 , G02F1/1362 , G09G3/30 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L21/98 , H01L25/075 , H01L25/10 , H01L27/06 , H01L27/12 , H01L27/15 , H01L29/786 , H01L33/00 , H01S5/02 , H01S5/42 , H04N5/70 , H04N5/74 , H05B33/12 , H01L21/20 , H01L21/22 , H01L21/304 , H01L21/52
CPC分类号： G02F1/13454 , A61B3/113 , G02B27/0093 , G02B27/0172 , G02F1/136277 , G09G3/30 , G09G3/36 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L25/10 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H04N5/7441 , H04N9/3141 , H05B33/12 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02B5/30 , G02F1/13336 , G02F2001/13613 , G02F2202/105 , G09G2300/023 , G09G2300/0809 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , G09G3/32 , G09G3/3607 , G09G3/3614 , G09G3/3648 , H01L2221/68359 , H01L2221/68363 , H01L27/1266 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7491
摘要： The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body.
摘要翻译： 本发明涉及在硅衬底上形成薄膜晶体管（TFT）的阵列以及用于转移到公共模块体的这种衬底的切割和平铺。
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公开(公告)号：US6143582A
公开(公告)日：2000-11-07
申请号：US249012
申请日：1999-02-12
申请人： Duy-Phach Vu , Brenda Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda Dingle , Ngwe Cheong
IPC分类号： A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1335 , G02F1/1347 , G02F1/136 , G02F1/1362 , G09G3/30 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L25/075 , H01L27/06 , H01L27/12 , H01L27/15 , H01L29/786 , H01L33/00 , H01S5/02 , H01S5/42 , H04N5/70 , H04N5/74 , H05B33/12 , H10L21/00
CPC分类号： G02F1/13454 , A61B3/113 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02F1/133526 , G02F1/136209 , G02F1/136277 , G09G3/30 , G09G3/36 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H04N5/7441 , H04N9/3141 , H05B33/12 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02B5/30 , G02F1/13336 , G02F1/13473 , G02F2001/13613 , G02F2202/105 , G09G2300/023 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , G09G3/32 , G09G3/3607 , G09G3/3648 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7491
摘要： The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in a complete glass-based modules. Other applications are contemplated, such as, displays, microprocessor and memory devices, and communication circuits with optical input and output.
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公开(公告)号：US06627953B1
公开(公告)日：2003-09-30
申请号：US09592246
申请日：2000-06-13
申请人： Duy-Phach Vu , Brenda Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda Dingle , Ngwe Cheong
IPC分类号： H01L310392
CPC分类号： H01L27/1266 , A61B3/113 , G02B5/30 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02F1/13336 , G02F1/133526 , G02F1/13454 , G02F1/13473 , G02F1/136209 , G02F2001/13613 , G02F2202/105 , G09G3/30 , G09G3/32 , G09G3/36 , G09G3/3607 , G09G3/3648 , G09G2300/023 , G09G2320/0233 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H01L33/0062 , H01L2221/68359 , H01L2221/68368 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/423 , H04N5/70 , H04N5/7441 , H04N5/7491 , H04N9/3141 , H05B33/12 , H01L2924/00
摘要： The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in a complete glass-based modules. Other applications are contemplated, such as, displays, microprocessor and memory devices, and communication circuits with optical input and output.
摘要翻译： 本发明涉及装置处理，封装和互连，其将产生比通过使用常规多芯片模块可获得的更高密度和复杂度的集成电子电路。 过程包括使用传输，互连和封装的硅薄膜的电路板在共同的模块衬底上形成复杂的多功能电路。 使用与极高密度和复杂性兼容的集成传输/互连处理的电路模块可在完整的玻璃基模块中提供具有板载驱动器和逻辑功能的大面积有源矩阵显示器。 可以考虑其他应用，例如显示器，微处理器和存储器件以及具有光输入和输出的通信电路。
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公开(公告)号：US06521940B1
公开(公告)日：2003-02-18
申请号：US09651062
申请日：2000-08-30
申请人： Duy-Phach Vu , Brenda Dingle , Ngwe Cheong
发明人： Duy-Phach Vu , Brenda Dingle , Ngwe Cheong
IPC分类号： H01L29788
CPC分类号： H01L27/1266 , A61B3/113 , G02B5/30 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02F1/13336 , G02F1/133526 , G02F1/13454 , G02F1/13473 , G02F1/136209 , G02F1/136277 , G02F2001/13613 , G02F2202/105 , G09G3/30 , G09G3/32 , G09G3/36 , G09G3/3607 , G09G3/3648 , G09G2300/023 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , H01L21/8221 , H01L24/96 , H01L25/0756 , H01L27/0688 , H01L27/1214 , H01L27/156 , H01L29/786 , H01L29/78603 , H01L29/78648 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01065 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01S5/0217 , H01S5/423 , H04N5/70 , H04N5/7441 , H04N5/7491 , H04N9/3141 , H05B33/12 , H01L2924/00
摘要： The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in a complete glass-based modules. Other applications are contemplated, such as, displays, microprocessor and memory devices, and communication circuits with optical input and output.
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