公开(公告)号：US5705424A

公开(公告)日：1998-01-06

申请号：US215555

申请日：1994-03-21

Applicant: Paul M. Zavracky ,  Duy-Phach Vu ,  Brenda Dingle ,  Matthew Zavracky ,  Mark B. Spitzer

Inventor： Paul M. Zavracky ,  Duy-Phach Vu ,  Brenda Dingle ,  Matthew Zavracky ,  Mark B. Spitzer

IPC: G02F1/136 ,  G02B27/00 ,  G02F1/1335 ,  G02F1/1347 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/30 ,  G09G3/36 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H04N5/74 ,  H01L21/20 ,  H01L21/22 ,  H01L21/304 ,  H01L21/52

CPC classification number: A61B3/113 ,  G02B27/0093 ,  G02F1/133526 ,  G02F1/13454 ,  G02F1/136277 ,  G02F1/1368 ,  G09G3/30 ,  G09G3/36 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78648 ,  H04N5/7441 ,  H04N9/3105 ,  H04N9/312 ,  H04N9/3141 ,  H04N9/3144 ,  H05B33/12 ,  G02B2027/0198 ,  G02F1/133514 ,  G02F1/133516 ,  G02F1/13473 ,  G02F1/136209 ,  G02F2001/13613 ,  G02F2202/105 ,  G02F2203/01 ,  G09G2300/023 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2310/0259 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2340/0464 ,  G09G2370/04 ,  G09G2370/042 ,  G09G3/2014 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3648 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L29/78612 ,  H01L29/78618 ,  H04N5/70 ,  H04N5/74 ,  H04N5/7491 ,  Y10S438/977

Abstract: The present invention relates to methods of fabricating pixel electrodes for active matrix displays including the formation of arrays of transistor circuits in thin film silicon on an insulating substrate and transfer of this active matrix circuit onto an optically transmissive substrate. An array of color filter elements can be formed prior to transfer of the active matrix circuit that are aligned between a light source for the display and the array of pixel electrodes to provide a color display.

Abstract translation: 本发明涉及制造用于有源矩阵显示器的像素电极的方法，包括在绝缘衬底上形成薄膜硅中晶体管电路的阵列并将该有源矩阵电路传送到光学透射衬底上。 可以在转移有源矩阵电路之前形成彩色滤光片元件阵列，该有源矩阵电路在用于显示器的光源和像素电极阵列之间对齐以提供彩色显示。

公开(公告)号：US5528397A

公开(公告)日：1996-06-18

申请号：US281777

申请日：1994-07-28

Applicant: Paul M. Zavracky ,  John C. C. Fan ,  Robert McClelland ,  Jeffrey Jacobsen ,  Brenda Dingle

Inventor： Paul M. Zavracky ,  John C. C. Fan ,  Robert McClelland ,  Jeffrey Jacobsen ,  Brenda Dingle

IPC: A61B3/113 ,  G02B5/30 ,  G02B27/00 ,  G02B27/01 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1347 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/30 ,  G09G3/36 ,  H01L21/336 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L25/075 ,  H01L27/06 ,  H01L27/12 ,  H01L27/15 ,  H01L29/786 ,  H01L33/00 ,  H04N5/70 ,  H04N5/74 ,  H05B33/12 ,  H01L27/01 ,  G09C3/10

CPC classification number: H01L27/1266 ,  A61B3/113 ,  G02B27/0093 ,  G02B27/017 ,  G02B27/0172 ,  G02F1/136277 ,  G09G3/30 ,  G09G3/36 ,  H01L21/8221 ,  H01L25/0756 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/156 ,  H01L29/66772 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78654 ,  H01L33/0062 ,  H04N5/7441 ,  H04N9/3141 ,  H05B33/12 ,  G02B2027/0132 ,  G02B2027/0138 ,  G02B2027/0187 ,  G02B2027/0198 ,  G02B5/30 ,  G02F2001/13613 ,  G02F2202/105 ,  G09G2300/023 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2340/0464 ,  G09G2370/042 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3648 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/0002 ,  H01L2924/09701 ,  H04N5/70 ,  H04N5/7491

Abstract: A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Abstract translation: 使用基本上单晶薄膜材料形成显示面板，该材料被转印到用于显示器制造的衬底上。 像素阵列形成光阀或开关，可以在传输之前用薄膜材料中的控制电子元件制造。 所得到的电路板然后被结合到具有发光或液晶材料的显示面板中以提供期望的显示。

公开(公告)号：US5317236A

公开(公告)日：1994-05-31

申请号：US815684

申请日：1991-12-31

Applicant: Paul M. Zavracky ,  John C. C. Fan ,  Robert McClelland ,  Jeffrey Jacobsen ,  Brenda Dingle ,  Mark B. Spitzer

Inventor： Paul M. Zavracky ,  John C. C. Fan ,  Robert McClelland ,  Jeffrey Jacobsen ,  Brenda Dingle ,  Mark B. Spitzer

IPC: G02F1/136 ,  A61B3/113 ,  G02B5/30 ,  G02B27/00 ,  G02B27/01 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1345 ,  G02F1/1347 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/30 ,  G09G3/36 ,  H01L21/336 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L25/075 ,  H01L27/06 ,  H01L27/12 ,  H01L27/15 ,  H01L29/786 ,  H01L33/00 ,  H01L33/40 ,  H01S5/02 ,  H01S5/42 ,  H04N5/70 ,  H04N5/74 ,  H05B33/12 ,  H01J9/00

CPC classification number: H01L27/1266 ,  A61B3/113 ,  G02B27/0093 ,  G02B27/017 ,  G02B27/0172 ,  G02F1/133526 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136277 ,  G09G3/30 ,  G09G3/36 ,  H01L21/8221 ,  H01L25/0756 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/156 ,  H01L29/66772 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78654 ,  H01L33/0062 ,  H04N5/7441 ,  H04N9/3141 ,  H05B33/12 ,  G02B2027/0132 ,  G02B2027/0138 ,  G02B2027/0187 ,  G02B2027/0198 ,  G02B5/30 ,  G02F1/13336 ,  G02F1/13473 ,  G02F2001/13613 ,  G02F2202/105 ,  G09G2300/023 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2340/0464 ,  G09G2370/042 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3648 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L33/405 ,  H01S5/0217 ,  H01S5/423 ,  H04N5/70 ,  H04N5/7491 ,  Y10S148/135

Abstract: A display panel is formed using a single crystal thin-film material that may be transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Abstract translation: 使用可以转移到显示器制造用基板的单晶薄膜材料形成显示面板。 像素阵列形成光阀或开关，可以在传输之前用薄膜材料中的控制电子元件制造。 所得到的电路板然后被结合到具有发光或液晶材料的显示面板中以提供期望的显示。

公开(公告)号：US20050179046A1

公开(公告)日：2005-08-18

申请号：US11057415

申请日：2005-02-14

Applicant: Tchang-hun Oh ,  Brenda Dingle ,  Bo Yang ,  Ilya Libenzon ,  William Roberts ,  Hong Choi ,  John Fan

Inventor： Tchang-hun Oh ,  Brenda Dingle ,  Bo Yang ,  Ilya Libenzon ,  William Roberts ,  Hong Choi ,  John Fan

IPC: H01L29/22 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/32

Abstract: An improved p-type electrode for a p-type gallium-nitride based semiconductor material is disclosed that includes at least one layer of indium-tin-oxide. The electrode can include the indium-tin-oxide layer(s) such that at least one of the indium-tin-oxide layers is in contact with the p-type semiconductor layer. Alternatively, the electrode can further include a first electrode layer in contact with the p-type semiconductor layer. In this example, the indium-tin-oxide layer(s) is over the first electrode layer. The first electrode layer includes at least one metal selected from the group consisting of nickel oxide, molybdenum oxide, ruthenium oxide and zinc oxide, and/or at least one non-oxidizing metal.

Abstract translation: 公开了一种用于p型氮化镓基半导体材料的改进的p型电极，其包括至少一层氧化铟锡。 电极可以包括铟锡氧化物层，使得至少一个氧化铟锡层与p型半导体层接触。 或者，电极还可以包括与p型半导体层接触的第一电极层。 在该示例中，铟锡氧化物层在第一电极层的上方。 第一电极层包括选自氧化镍，氧化钼，氧化钌和氧化锌中的至少一种金属和/或至少一种非氧化性金属。

公开(公告)号：US20050179042A1

公开(公告)日：2005-08-18

申请号：US11057695

申请日：2005-02-14

Applicant: Bo Yang ,  Tchang-hun Oh ,  Brenda Dingle ,  William Roberts ,  Ilya Libenzon ,  Hong Choi ,  John Fan

Inventor： Bo Yang ,  Tchang-hun Oh ,  Brenda Dingle ,  William Roberts ,  Ilya Libenzon ,  Hong Choi ,  John Fan

IPC: H01L27/15 ,  H01L33/20

CPC classification number: H01L27/153 ,  H01L33/20

Abstract: An integrated light-emitting device includes multiple p-n diodes integrated monolithically on an insulating substrate. The p-n diodes are of monolithic semiconductor materials over the single substrate. The p-n diodes can be all light-emitting diodes or a combination of light-emitting and ESD-protection diodes. The p-n diodes may have at least one beveled sidewall to enhance light extraction out of the light-emitting diodes. A method for producing such integrated light-emitting device and a method for producing such p-n diode that includes at least one beveled sidewall are also disclosed.

Abstract translation: 集成发光器件包括整体地集成在绝缘衬底上的多个p-n二极管。 p-n二极管是单个衬底上的单片半导体材料。 p-n二极管可以是所有的发光二极管，也可以是发光和ESD保护二极管的组合。 p-n二极管可以具有至少一个倾斜的侧壁，以增强从发光二极管中的光提取。 还公开了一种用于制造这种集成发光器件的方法以及包括至少一个倾斜侧壁的这种p-n二极管的制造方法。

公开(公告)号：US06424020B1

公开(公告)日：2002-07-23

申请号：US08999352

申请日：1997-12-29

Applicant: Duy-Pach Vu ,  Brenda Dingle ,  Ngwe Cheong

Inventor： Duy-Pach Vu ,  Brenda Dingle ,  Ngwe Cheong

IPC: H01L2900

CPC classification number: H01L27/1266 ,  A61B3/113 ,  G02B5/30 ,  G02B27/0093 ,  G02B27/017 ,  G02B27/0172 ,  G02B2027/0132 ,  G02B2027/0138 ,  G02B2027/0187 ,  G02B2027/0198 ,  G02F1/13336 ,  G02F1/133526 ,  G02F1/13454 ,  G02F1/13473 ,  G02F1/136209 ,  G02F1/136277 ,  G02F2001/13613 ,  G02F2202/105 ,  G09G3/30 ,  G09G3/32 ,  G09G3/36 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3648 ,  G09G2300/023 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2340/0464 ,  G09G2370/042 ,  H01L21/8221 ,  H01L24/96 ,  H01L25/0756 ,  H01L25/10 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/156 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01051 ,  H01L2924/01059 ,  H01L2924/01065 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01S5/0217 ,  H01S5/423 ,  H04N5/70 ,  H04N5/7441 ,  H04N5/7491 ,  H04N9/3141 ,  H05B33/12 ,  Y10S148/135 ,  Y10S148/15 ,  H01L2924/00

Abstract: The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in a complete glass-based modules. Other applications are contemplated, such as, displays, microprocessor and memory devices, and communication circuits with optical input and output.

Abstract translation: 本发明涉及装置处理，封装和互连，其将产生比通过使用常规多芯片模块可获得的更高密度和复杂度的集成电子电路。 过程包括使用传输，互连和封装的硅薄膜的电路板在共同的模块衬底上形成复杂的多功能电路。 使用与极高密度和复杂性兼容的集成传输/互连处理的电路模块可在完整的玻璃基模块中提供具有板载驱动器和逻辑功能的大面积有源矩阵显示器。 可以考虑其他应用，例如显示器，微处理器和存储器件以及具有光输入和输出的通信电路。

公开(公告)号：US6143582A

公开(公告)日：2000-11-07

申请号：US249012

申请日：1999-02-12

Applicant: Duy-Phach Vu ,  Brenda Dingle ,  Ngwe Cheong

Inventor： Duy-Phach Vu ,  Brenda Dingle ,  Ngwe Cheong

IPC: A61B3/113 ,  G02B5/30 ,  G02B27/00 ,  G02B27/01 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1347 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/30 ,  G09G3/32 ,  G09G3/36 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L25/075 ,  H01L27/06 ,  H01L27/12 ,  H01L27/15 ,  H01L29/786 ,  H01L33/00 ,  H01S5/02 ,  H01S5/42 ,  H04N5/70 ,  H04N5/74 ,  H05B33/12 ,  H10L21/00

CPC classification number: G02F1/13454 ,  A61B3/113 ,  G02B27/0093 ,  G02B27/017 ,  G02B27/0172 ,  G02F1/133526 ,  G02F1/136209 ,  G02F1/136277 ,  G09G3/30 ,  G09G3/36 ,  H01L21/8221 ,  H01L24/96 ,  H01L25/0756 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/156 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H04N5/7441 ,  H04N9/3141 ,  H05B33/12 ,  G02B2027/0132 ,  G02B2027/0138 ,  G02B2027/0187 ,  G02B2027/0198 ,  G02B5/30 ,  G02F1/13336 ,  G02F1/13473 ,  G02F2001/13613 ,  G02F2202/105 ,  G09G2300/023 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2340/0464 ,  G09G2370/042 ,  G09G3/32 ,  G09G3/3607 ,  G09G3/3648 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01065 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01S5/0217 ,  H01S5/423 ,  H04N5/70 ,  H04N5/7491

Abstract: The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in a complete glass-based modules. Other applications are contemplated, such as, displays, microprocessor and memory devices, and communication circuits with optical input and output.

公开(公告)号：US5976953A

公开(公告)日：1999-11-02

申请号：US986998

申请日：1997-12-08

Applicant: Paul M. Zavracky ,  Matthew Zavracky ,  Duy-Phach Vu ,  Brenda Dingle

Inventor： Paul M. Zavracky ,  Matthew Zavracky ,  Duy-Phach Vu ,  Brenda Dingle

IPC: H01L21/822 ,  H01L21/98 ,  H01L23/498 ,  H01L25/065 ,  H01L25/18 ,  H01L27/00 ,  H01L27/04 ,  H01L27/10

CPC classification number: H01L25/50 ,  H01L23/49833 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/16145 ,  H01L2224/24225 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  Y10S148/164

Abstract: A multi-layered structure is fabricated in which a microprocessor is configured in different layers and interconnected vertically through insulating layers which separate each circuit layer of the structure. Each circuit layer can be fabricated in a separate wafer or thin film material and then transferred onto the layered structure and interconnected.

公开(公告)号：US5702963A

公开(公告)日：1997-12-30

申请号：US333226

申请日：1994-11-02

Applicant: Duy-Pach Vu ,  Brenda Dingle ,  Ngwe Cheong

Inventor： Duy-Pach Vu ,  Brenda Dingle ,  Ngwe Cheong

IPC: G02F1/136 ,  A61B3/113 ,  G02B5/30 ,  G02B27/00 ,  G02B27/01 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1347 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/30 ,  G09G3/32 ,  G09G3/36 ,  H01L21/02 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L21/98 ,  H01L25/075 ,  H01L25/10 ,  H01L27/00 ,  H01L27/06 ,  H01L27/12 ,  H01L27/15 ,  H01L29/78 ,  H01L29/786 ,  H01L33/00 ,  H01S5/02 ,  H01S5/42 ,  H04N5/70 ,  H04N5/74 ,  H05B33/12 ,  H01L21/265

CPC classification number: G02F1/13454 ,  A61B3/113 ,  G02B27/0093 ,  G02B27/017 ,  G02B27/0172 ,  G02F1/133526 ,  G02F1/136209 ,  G02F1/136277 ,  G09G3/30 ,  G09G3/36 ,  H01L21/8221 ,  H01L24/96 ,  H01L25/0756 ,  H01L25/10 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H04N5/7441 ,  H04N9/3141 ,  H05B33/12 ,  G02B2027/0132 ,  G02B2027/0138 ,  G02B2027/0187 ,  G02B2027/0198 ,  G02B5/30 ,  G02F1/13336 ,  G02F1/13473 ,  G02F2001/13613 ,  G02F2202/105 ,  G09G2300/023 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2340/0464 ,  G09G2370/042 ,  G09G3/32 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3648 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01051 ,  H01L2924/01059 ,  H01L2924/01065 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01S5/0217 ,  H01S5/423 ,  H04N5/70 ,  H04N5/7491 ,  Y10S148/135 ,  Y10S148/15

Abstract: The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of complex multi-function circuitry on common module substrates Using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in a complete glass-based modules. Other applications are contemplated, such as, displays, microprocessor and memory devices, and communication circuits with optical input and output.

Abstract translation: 本发明涉及装置处理，封装和互连，其将产生比通过使用常规多芯片模块可获得的更高密度和复杂度的集成电子电路。 工艺包括在共同的模块衬底上形成复杂的多功能电路使用传输，互连和封装的硅薄膜电路板。 使用与极高密度和复杂性兼容的集成传输/互连处理的电路模块可在完整的玻璃基模块中提供具有板载驱动器和逻辑功能的大面积有源矩阵显示器。 可以考虑其他应用，例如显示器，微处理器和存储器件以及具有光输入和输出的通信电路。

公开(公告)号：US5362671A

公开(公告)日：1994-11-08

申请号：US225091

申请日：1994-04-08

Applicant: Paul M. Zavracky ,  John C. C. Fan ,  Robert McClelland ,  Jeffrey Jacobsen ,  Brenda Dingle

Inventor： Paul M. Zavracky ,  John C. C. Fan ,  Robert McClelland ,  Jeffrey Jacobsen ,  Brenda Dingle

IPC: A61B3/113 ,  G02B27/00 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1347 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/30 ,  G09G3/36 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/15 ,  H01L29/786 ,  H04N5/70 ,  H04N5/74 ,  H05B33/12 ,  H01L21/20

CPC classification number: H05B33/12 ,  A61B3/113 ,  G02B27/0093 ,  G02F1/136277 ,  G09G3/30 ,  G09G3/36 ,  H01L27/1214 ,  H01L27/156 ,  H01L29/66772 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H04N5/7441 ,  H04N9/3141 ,  G02B2027/0198 ,  G09G2300/023 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2340/0464 ,  G09G2370/042 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3648 ,  H01L2221/68359 ,  H01L2221/68363 ,  H04N5/70 ,  H04N5/7491 ,  Y10S148/15

Abstract: A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is than incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Abstract translation: 使用基本上单晶薄膜材料形成显示面板，该材料被转印到用于显示器制造的衬底上。 像素阵列形成光阀或开关，可以在传输之前用薄膜材料中的控制电子元件制造。 所得到的电路面板并入到具有发光或液晶材料的显示面板中以提供期望的显示。