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    Method for forming T-shaped gate structure
    1.
    发明授权
    Method for forming T-shaped gate structure 有权
    形成T型门结构的方法

    公开(公告)号：US08435875B1

    公开(公告)日：2013-05-07

    申请号：US13489476

    申请日：2012-06-06

    申请人： Edward Yi Chang ,  Lu-Che Huang ,  Chia-Hua Chang ,  Yueh-Chin Lin ,  Wei-Hua Chieng ,  Shih-Chien Liu

    发明人： Edward Yi Chang ,  Lu-Che Huang ,  Chia-Hua Chang ,  Yueh-Chin Lin ,  Wei-Hua Chieng ,  Shih-Chien Liu

    IPC分类号： H01L21/336

    CPC分类号： H01L29/4232 ,  H01L21/0272 ,  H01L21/28587 ,  H01L21/28593

    摘要： A method for forming a T-shaped gate is provided. The method includes providing a substrate. Then, a photoresist structure is formed over the substrate. The photoresist structure includes two development rates. Next, a mask with an opening is formed over the photoresist structure to pattern the photoresist structure. An angle exposure is applied to the photoresist structure, and the exposed photoresist structure is developed to form a T-shaped notch. A width of the T-shaped notch is gradually reduced from a top portion thereof to a bottom portion to expose a surface of the substrate. Then, a gate metal is deposited in the T-shaped notch. Thereafter, the patterned photoresist structure is removed to form the T-shaped gate.

    摘要翻译： 提供一种形成T形门的方法。 该方法包括提供基板。 然后，在衬底上形成光致抗蚀剂结构。 光致抗蚀剂结构包括两个显影速率。 接下来，在光致抗蚀剂结构上形成具有开口的掩模以对光致抗蚀剂结构进行图案化。 对光致抗蚀剂结构施加角度曝光，并且曝光的光致抗蚀剂结构被显影以形成T形凹口。 T形凹口的宽度从其顶部逐渐减小到底部以露出基底的表面。 然后，栅极金属沉积在T形凹口中。 此后，去除图案化的光致抗蚀剂结构以形成T形门。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20130153886A1

    公开(公告)日：2013-06-20

    申请号：US13477868

    申请日：2012-05-22

    申请人： Edward Yi. Chang ,  Yueh-Chin Lin ,  Chia-Hua Chang ,  Hai-Dang Trinh

    发明人： Edward Yi. Chang ,  Yueh-Chin Lin ,  Chia-Hua Chang ,  Hai-Dang Trinh

    IPC分类号： H01L29/12 ,  H01L21/02

    CPC分类号： H01L29/517 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/28264 ,  H01L29/78 ,  H01L29/94

    摘要： The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.

    摘要翻译： 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件包括：III-V半导体层; 形成在III-V半导体层上的氧化铝层; 和在氧化铝层上形成的镧系元素氧化物层。 制造半导体器件的方法包括：在III-V半导体层和镧系元素氧化物层之间形成氧化铝层，以防止III-V族半导体层和镧系元素氧化物层之间的原子的相互反应。

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08735904B2

    公开(公告)日：2014-05-27

    申请号：US13368662

    申请日：2012-02-08

    申请人： Yi Chang ,  Chia-Hua Chang ,  Yueh-Chin Lin ,  Yu-Kong Chen ,  Ting-En Shie

    发明人： Yi Chang ,  Chia-Hua Chang ,  Yueh-Chin Lin ,  Yu-Kong Chen ,  Ting-En Shie

    IPC分类号： H01L29/15 ,  H01L21/336

    CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/452

    摘要： A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.

    摘要翻译： 半导体器件包括由GaN基半导体材料制成的主体和至少一个电极结构。 电极结构包括形成在主体上的欧姆接触层，形成在与主体相反的欧姆接触层上的缓冲层，以及由铜基材料制成并形成的电路层 在与欧姆接触层相反的缓冲层上。 欧姆接触层由选自钛，铝，镍及其合金的材料制成。 缓冲层由不同于欧姆接触层材料的材料制成，选自钛，钨，氮化钛，氮化钨及其组合。

    Method for fabricating a GaN-based thin film transistor
    5.
    发明授权
    Method for fabricating a GaN-based thin film transistor 有权
    GaN基薄膜晶体管的制造方法

    公开(公告)号：US08420421B2

    公开(公告)日：2013-04-16

    申请号：US13117428

    申请日：2011-05-27

    申请人： Yi Chang ,  Chia-Hua Chang ,  Yueh-Chin Lin

    发明人： Yi Chang ,  Chia-Hua Chang ,  Yueh-Chin Lin

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462

    摘要： A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask having an opening to partially expose the insulating layer; ion-implanting a p-type impurity through the opening and the insulating layer to form a p-doped region in the n-type GaN-based semiconductor material, followed by removing the insulating layer and the ion implanting mask; forming a dielectric layer on the semiconductor epitaxial layer; partially removing the dielectric layer; forming source and drain electrodes; and forming a gate electrode.

    摘要翻译： 制造GaN基薄膜晶体管的方法包括：在衬底上形成半导体外延层，所述半导体外延层具有n型GaN基半导体材料; 在所述半导体外延层上形成绝缘层; 在所述绝缘层上形成离子注入掩模，所述离子注入掩模具有用于部分地暴露所述绝缘层的开口; 通过开口和绝缘层离子注入p型杂质，以在n型GaN基半导体材料中形成p掺杂区域，随后除去绝缘层和离子注入掩模; 在所述半导体外延层上形成介电层; 部分去除电介质层; 形成源极和漏极; 并形成栅电极。

    METHOD FOR FABRICATING A GaN-BASED THIN FILM TRANSISTOR
    6.
    发明申请
    METHOD FOR FABRICATING A GaN-BASED THIN FILM TRANSISTOR 有权
    用于制造基于GaN的薄膜晶体管的方法

    公开(公告)号：US20120122281A1

    公开(公告)日：2012-05-17

    申请号：US13117428

    申请日：2011-05-27

    申请人： Yi Chang ,  Chia-Hua Chang ,  Yueh-Chin Lin

    发明人： Yi Chang ,  Chia-Hua Chang ,  Yueh-Chin Lin

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462

    摘要： A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask having an opening to partially expose the insulating layer; ion-implanting a p-type impurity through the opening and the insulating layer to form a p-doped region in the n-type GaN-based semiconductor material, followed by removing the insulating layer and the ion implanting mask; forming a dielectric layer on the semiconductor epitaxial layer; partially removing the dielectric layer; forming source and drain electrodes; and forming a gate electrode.

    摘要翻译： 制造GaN基薄膜晶体管的方法包括：在衬底上形成半导体外延层，所述半导体外延层具有n型GaN基半导体材料; 在所述半导体外延层上形成绝缘层; 在所述绝缘层上形成离子注入掩模，所述离子注入掩模具有用于部分地暴露所述绝缘层的开口; 通过开口和绝缘层离子注入p型杂质，以在n型GaN基半导体材料中形成p掺杂区域，随后除去绝缘层和离子注入掩模; 在所述半导体外延层上形成介电层; 部分去除电介质层; 形成源极和漏极; 并形成栅电极。